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Author: M. Garfinkel
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
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Book Description
Author: M. Garfinkel
Publisher:
ISBN:
Category :
Languages : en
Pages : 92
Get Book Here
Book Description
Author: M. Garfinkel
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Author: M. Garfinkel
Publisher:
ISBN:
Category : Silane
Languages : en
Pages :
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Author:
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Category :
Languages : en
Pages :
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Author:
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Languages : en
Pages :
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This research program began January 6, 1976. Its objective is to demonstrate the feasibility of the floating substrate sheet growth process for the growth of silicon sheet. This process is an approach to the formation of single-crystal silicon by direct epitaxial conversion from a gaseous silane. Incoming feedstock gas impinges upon a silicon substrate which is floating upon a thin pool of liquid tin. Single-crystal silicon grows to the desired thickness by means of vapor phase epitaxy. Nucleation of fresh substrate silicon takes place by rapid growth from the edge of the growing sheet into a region at the surface of the liquid tin which is supersaturated in the silicon. The process lends itself to continuous operation with the growing sheet being continuously withdrawn from the growth zone. (WDM).
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Languages : en
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The work described was directed toward the demonstration of the practical feasibility of the Floating Substrate Process for the growth of silicon sheet. Supercooling of silicon--tin alloy melts was studied. Values as high as 78°C at 1100°C and 39°C at 1200°C were observed, corresponding to supersaturation parameter values 0.025 and 0.053 at 1050°C and 1150°C, respectively. The interaction of tin with silane gas streams was investigated over the temperature range 1000 to 1200°C. Single-pass conversion efficiencies exceeding 30% were obtained. The growth habit of spontaneously-nucleated surface growth was determined to be consistent with dendritic and web growth from 111 singly-twinned triangular nucleii. Surface growth of interlocking silicon crystals, thin enough to follow the surface of the liquid and with growth velocity as high as 5 mm/min, was obtained. Large area single-crystal growth along the melt surface was not achieved. Small single-crystal surface growth was obtained which did not propagate beyond a few millimeters. The probable reason for the polycrystalline growth is the poisoning of the growth interface by impurities.
Author: Yves Pauleau
Publisher: Elsevier
ISBN: 0080458963
Category : Technology & Engineering
Languages : en
Pages : 745
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Book Description
The current status of the science and technology related to coatings, thin films and surface modifications produced by directed energy techniques is assessed in Materials Surface Processing by Directed Energy Techniques. The subject matter is divided into 20 chapters - each presented at a tutorial level – rich with fundamental science and experimental results. New trends and new results are also evoked to give an overview of future developments and applications. Provides a broad overview on modern coating and thin film deposition techniques, and their applications Presents and discusses various problems of physics and chemistry involved in the production, characterization and applications of coatings and thin films Each chapter includes experimental results illustrating various models, mechanisms or theories
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Languages : en
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Laboratory apparatus has been designed, built, and put into operation to study the supercooling of Sn--Si melts and the uptake of silicon from silanes. Values of supercooling of Sn--Si melts as high as 78°C at 1100°C and 39°C at 1200°C have been observed. Results to date have been limited by nucleation caused by foreign material floating on the surface of the melt. Spontaneously nucleated planar platelet growth has been observed at the Sn--Si supercooled surface having growth rates of approximately 0.5 cm/min. Homogeneous nucleation of silane decomposition has been studied at 1015°C and 1135°C. The flow rates of HCl required to suppress gas phase decomposition have been determined for silane flow rates up to 4.5 x 10−3 mole/min. Initial silicon uptake experiments have shown that at least 20 percent of the incoming silicon contained in a flowing silane gas stream can be incorporated into liquid tin at 1040°C.
Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1566777445
Category : Integrated circuits
Languages : en
Pages : 547
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Book Description
ULSI Process Integration 6 covers all aspects of process integration. Sections are devoted to 1) Device Technologies, 2) Front-end-of-line integration (gate stacks, shallow junctions, dry etching, etc.), 3) Back-end-of-line integration (CMP, low-k, Cu interconnect, air-gaps, 3D packaging, etc.), 4) Alternative channel technologies (Ge, III-V, hybrid integration), and 5) Emerging technologies (CNT, graphene, polymer electronics, nanotubes).
Author: Donald M. Mattox
Publisher: William Andrew
ISBN: 0815520387
Category : Technology & Engineering
Languages : en
Pages : 793
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Book Description
This updated version of the popular handbook further explains all aspects of physical vapor deposition (PVD) process technology from the characterizing and preparing the substrate material, through deposition processing and film characterization, to post-deposition processing. The emphasis of the new edition remains on the aspects of the process flow that are critical to economical deposition of films that can meet the required performance specifications, with additional information to support the original material. The book covers subjects seldom treated in the literature: substrate characterization, adhesion, cleaning and the processing. The book also covers the widely discussed subjects of vacuum technology and the fundamentals of individual deposition processes. However, the author uniquely relates these topics to the practical issues that arise in PVD processing, such as contamination control and film growth effects, which are also rarely discussed in the literature. In bringing these subjects together in one book, the reader can understand the interrelationship between various aspects of the film deposition processing and the resulting film properties. The author draws upon his long experience with developing PVD processes and troubleshooting the processes in the manufacturing environment, to provide useful hints for not only avoiding problems, but also for solving problems when they arise. He uses actual experiences, called "war stories", to emphasize certain points. Special formatting of the text allows a reader who is already knowledgeable in the subject to scan through a section and find discussions that are of particular interest. The author has tried to make the subject index as useful as possible so that the reader can rapidly go to sections of particular interest. Extensive references allow the reader to pursue subjects in greater detail if desired. The book is intended to be both an introduction for those who are new to the field and a valuable resource to those already in the field. The discussion of transferring technology between R&D and manufacturing provided in Appendix 1, will be of special interest to the manager or engineer responsible for moving a PVD product and process from R&D into production. Appendix 2 has an extensive listing of periodical publications and professional societies that relate to PVD processing. The extensive Glossary of Terms and Acronyms provided in Appendix 3 will be of particular use to students and to those not fully conversant with the terminology of PVD processing or with the English language. Fully revised and updated to include the latest developments in PVD process technology ‘War stories’ drawn from the author’s extensive experience emphasize important points in development and manufacturing Appendices include listings of periodicals and professional societies, terms and acronyms, and material on transferring technology between R&D and manufacturing
