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Author: E. S. Oxner
Publisher: CRC Press
ISBN: 1000147312
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.
Author: E. S. Oxner
Publisher: CRC Press
ISBN: 1000147312
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
This book provides the reader with some insights into the many styles of field effect transistors (FETs) being used. It offers a rudimentary understanding of their operation and performance. The book explains the complex terminology that defines the various FET parameters.
Author: Bert Henderson
Publisher: Artech House
ISBN: 1608074897
Category : Technology & Engineering
Languages : en
Pages : 877
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Book Description
Although microwave mixers play a critical role in wireless communication and other microwave applications employing frequency conversion circuits, engineers find that most books on this subject emphasize theoretical aspects, rather than practical applications. That’s about to change with the forthcoming release of Microwave Mixer Technology and Applications. Based on a review of over one thousand patents on mixers and frequency conversion, authors Bert Henderson and Edmar Camargo have written a comprehensive book for mixer designers who want solid ideas for solving their own design challenges. Many of the important and most interesting patents and related circuits are discussed in the several application oriented chapters. In addition, important contributions from the technical literature are included to provide a solid theoretical foundation. This book contains both introductory and advanced material about active and passive mixers that use bipolar transistor, FET, or diode switching devices. Theory and design details are presented for dozens of important mixer designs, with practical application information derived from the authors’ decades of experience.
Author: Lining Zhang
Publisher: Springer
ISBN: 3319316532
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.
Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350
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Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Author: Suman Lata Tripathi
Publisher: John Wiley & Sons
ISBN: 1119761778
Category : Computers
Languages : en
Pages : 384
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Book Description
There is not a single industry which will not be transformed by machine learning and Internet of Things (IoT). IoT and machine learning have altogether changed the technological scenario by letting the user monitor and control things based on the prediction made by machine learning algorithms. There has been substantial progress in the usage of platforms, technologies and applications that are based on these technologies. These breakthrough technologies affect not just the software perspective of the industry, but they cut across areas like smart cities, smart healthcare, smart retail, smart monitoring, control, and others. Because of these “game changers,” governments, along with top companies around the world, are investing heavily in its research and development. Keeping pace with the latest trends, endless research, and new developments is paramount to innovate systems that are not only user-friendly but also speak to the growing needs and demands of society. This volume is focused on saving energy at different levels of design and automation including the concept of machine learning automation and prediction modeling. It also deals with the design and analysis for IoT-enabled systems including energy saving aspects at different level of operation. The editors and contributors also cover the fundamental concepts of IoT and machine learning, including the latest research, technological developments, and practical applications. Valuable as a learning tool for beginners in this area as well as a daily reference for engineers and scientists working in the area of IoT and machine technology, this is a must-have for any library.
Author: Pouya Valizadeh
Publisher: John Wiley & Sons
ISBN: 1119155495
Category : Technology & Engineering
Languages : en
Pages : 471
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Book Description
This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.
Author: Shunpei Yamazaki
Publisher: John Wiley & Sons
ISBN: 111924742X
Category : Technology & Engineering
Languages : en
Pages : 376
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Book Description
This book describes the application of c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) technology in large-scale integration (LSI) circuits. The applications include Non-volatile Oxide Semiconductor Random Access Memory (NOSRAM), Dynamic Oxide Semiconductor Random Access Memory (DOSRAM), central processing unit (CPU), field-programmable gate array (FPGA), image sensors, and etc. The book also covers the device physics (e.g., off-state characteristics) of the CAAC-IGZO field effect transistors (FETs) and process technology for a hybrid structure of CAAC-IGZO and Si FETs. It explains an extremely low off-state current technology utilized in the LSI circuits, demonstrating reduced power consumption in LSI prototypes fabricated by the hybrid process. A further two books in the series will describe the fundamentals; and the specific application of CAAC-IGZO to LCD and OLED displays. Key features: • Outlines the physics and characteristics of CAAC-IGZO FETs that contribute to favorable operations of LSI devices. • Explains the application of CAAC-IGZO to LSI devices, highlighting attributes including low off-state current, low power consumption, and excellent charge retention. • Describes the NOSRAM, DOSRAM, CPU, FPGA, image sensors, and etc., referring to prototype chips fabricated by a hybrid process of CAAC-IGZO and Si FETs.
Author: Noboru Kimizuka
Publisher: John Wiley & Sons
ISBN: 1119247403
Category : Technology & Engineering
Languages : en
Pages : 348
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Book Description
Electronic devices based on oxide semiconductors are the focus of much attention, with crystalline materials generating huge commercial success. Indium–gallium–zinc oxide (IGZO) transistors have a higher mobility than amorphous silicon transistors, and an extremely low off-state current. C-axis aligned crystalline (CAAC) IGZO enables aggressive down-scaling, high reliability, and process simplification of transistors in displays and LSI devices. This original book introduces the CAAC-IGZO structure, and describes the physics and technology of this new class of oxide materials. It explains the crystallographic classification and characteristics of crystalline oxide semiconductors, their crystallographic characteristics and physical properties, and how this unique material has made a major contribution to the field of oxide semiconductor thin films. Two further books in this series describe applications of CAAC-IGZO in flat-panel displays and LSI devices. Key features: Introduces the unique and revolutionary, yet relatively unknown crystalline oxide semiconductor CAAC-IGZO Presents crystallographic overviews of IGZO and related compounds. Offers an in-depth understanding of CAAC-IGZO. Explains the fabrication method of CAAC-IGZO thin films. Presents the physical properties and latest data to support high-reliability crystalline IGZO based on hands-on experience. Describes the manufacturing process the CAAC-IGZO transistors and introduces the device application using CAAC-IGZO.
Author: Alex Lidow
Publisher: John Wiley & Sons
ISBN: 1119594146
Category : Science
Languages : en
Pages : 389
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Book Description
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author: Raymond S. Pengelly
Publisher: IET
ISBN: 1884932509
Category : Technology & Engineering
Languages : en
Pages : 705
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Book Description
The following topics are dealt with: GaAs FET theory-small signal; GaAs FET theory-power; requirements and fabrication of GaAs FETs; design of transistor amplifiers; FET mixers; GaAs FET oscillators; FET and IC packaging; FET circuits; gallium arsenide integrated circuits; and other III-V materials and devices
