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Author: Hiroshi Ishiwara
Publisher: Springer Science & Business Media
ISBN: 9783540407188
Category : Computers
Languages : en
Pages : 316
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Book Description
The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Author: Hiroshi Ishiwara
Publisher: Springer Science & Business Media
ISBN: 9783540407188
Category : Computers
Languages : en
Pages : 316
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Book Description
The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.
Author: James F. Scott
Publisher: Springer Science & Business Media
ISBN: 3662043076
Category : Technology & Engineering
Languages : en
Pages : 255
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Book Description
This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures. More than 500 up-to-date references and 76 problems make it useful as a research reference for physicists, engineers and students.
Author: Yoshio Nishi
Publisher: Elsevier
ISBN: 0857098098
Category : Computers
Languages : en
Pages : 456
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Book Description
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
Author: An Chen
Publisher: John Wiley & Sons
ISBN: 1118958268
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
Emerging Nanoelectronic Devices focuses on the future direction of semiconductor and emerging nanoscale device technology. As the dimensional scaling of CMOS approaches its limits, alternate information processing devices and microarchitectures are being explored to sustain increasing functionality at decreasing cost into the indefinite future. This is driving new paradigms of information processing enabled by innovative new devices, circuits, and architectures, necessary to support an increasingly interconnected world through a rapidly evolving internet. This original title provides a fresh perspective on emerging research devices in 26 up to date chapters written by the leading researchers in their respective areas. It supplements and extends the work performed by the Emerging Research Devices working group of the International Technology Roadmap for Semiconductors (ITRS). Key features: • Serves as an authoritative tutorial on innovative devices and architectures that populate the dynamic world of “Beyond CMOS” technologies. • Provides a realistic assessment of the strengths, weaknesses and key unknowns associated with each technology. • Suggests guidelines for the directions of future development of each technology. • Emphasizes physical concepts over mathematical development. • Provides an essential resource for students, researchers and practicing engineers.
Author: Seungbum Hong
Publisher: Springer
ISBN: 1489975373
Category : Technology & Engineering
Languages : en
Pages : 280
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Book Description
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Author: Byung-Eun Park
Publisher: Springer Nature
ISBN: 9811512124
Category : Technology & Engineering
Languages : en
Pages : 421
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Book Description
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Author: Naresh Dalal
Publisher: Springer
ISBN: 3540496041
Category : Science
Languages : en
Pages : 227
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Book Description
With contributions by numerous experts
Author: Indrani Coondoo
Publisher: BoD – Books on Demand
ISBN: 9533074396
Category : Science
Languages : en
Pages : 467
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Book Description
Ferroelectric materials exhibit a wide spectrum of functional properties, including switchable polarization, piezoelectricity, high non-linear optical activity, pyroelectricity, and non-linear dielectric behaviour. These properties are crucial for application in electronic devices such as sensors, microactuators, infrared detectors, microwave phase filters and, non-volatile memories. This unique combination of properties of ferroelectric materials has attracted researchers and engineers for a long time. This book reviews a wide range of diverse topics related to the phenomenon of ferroelectricity (in the bulk as well as thin film form) and provides a forum for scientists, engineers, and students working in this field. The present book containing 24 chapters is a result of contributions of experts from international scientific community working in different aspects of ferroelectricity related to experimental and theoretical work aimed at the understanding of ferroelectricity and their utilization in devices. It provides an up-to-date insightful coverage to the recent advances in the synthesis, characterization, functional properties and potential device applications in specialized areas.
Author: Karin M. Rabe
Publisher: Springer Science & Business Media
ISBN: 3540345914
Category : Technology & Engineering
Languages : en
Pages : 395
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Book Description
The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.
Author: Mickaël Lallart
Publisher: BoD – Books on Demand
ISBN: 9533074566
Category : Science
Languages : en
Pages : 266
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Book Description
Ferroelectric materials have been and still are widely used in many applications, that have moved from sonar towards breakthrough technologies such as memories or optical devices. This book is a part of a four volume collection (covering material aspects, physical effects, characterization and modeling, and applications) and focuses on the application of ferroelectric devices to innovative systems. In particular, the use of these materials as varying capacitors, gyroscope, acoustics sensors and actuators, microgenerators and memory devices will be exposed, providing an up-to-date review of recent scientific findings and recent advances in the field of ferroelectric devices.
