Fabrication and Characterization of Iron Nitride Thin Films and Nanopore Devices PDF Download
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Author: 顏嘉男
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Category :
Languages : en
Pages :
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Author: 顏嘉男
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Category :
Languages : en
Pages :
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Author: William A. Carrington
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Category :
Languages : en
Pages : 146
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Author: Hrishikesh Kamat
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Category :
Languages : en
Pages :
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Author: Jonghoon Baek
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Category : Aluminum nitride
Languages : en
Pages :
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Author: Dhruti Mayur Trivedi
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Category :
Languages : en
Pages :
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Author: Jian-Ying Xiang
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Category :
Languages : en
Pages : 118
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Author: Florian Weiss
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Category :
Languages : en
Pages :
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Author: Mostafa M. Amini
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Category :
Languages : en
Pages : 30
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The transition metal-main group clusters HFe4(CO)12NH, HFe4(CO)12BH2 and HFe3(CO)9BH4 have been used as volatile precursors for the fabrication of iron nitride and iron boride thin films. Films having different thicknesses have been prepared by chemical vapor deposition on a glass substrate at 160 - 180 C. The films have been characterized by X-ray photoelectron, Auger electron and Mossbauer spectroscopies, and by X-ray diffraction. XPS indicates that the iron nitride films contain 10 % nitrogen, and are low in oxygen and carbon impurities. XRD shows that the iron nitride films contain -Fe. -Fe is not found in the iron boride thin films; AES shows that the iron boride films prepared under poor vacuum conditions contains some oxidized boron. Mossbauer spectroscopy shows that the iron boride films prepared by this technique from HFE4(CO)12BH2 has a similar structure to that of iron boride prepared by rapid-quenching techniques. [Authors' abstract].
Author: Uzair Majeed
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ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 125
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Author:
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ISBN:
Category : Chemistry
Languages : en
Pages : 2692
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