Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 1139463594
Category : Science
Languages : en
Pages : 625
Book Description
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Extended Defects in Semiconductors
Author: D. B. Holt
Publisher: Cambridge University Press
ISBN: 1139463594
Category : Science
Languages : en
Pages : 625
Book Description
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Publisher: Cambridge University Press
ISBN: 1139463594
Category : Science
Languages : en
Pages : 625
Book Description
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Point and Extended Defects in Semiconductors
Author: Giorgio Benedek
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Publisher: Springer Science & Business Media
ISBN: 1468457098
Category : Science
Languages : en
Pages : 286
Book Description
The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Extended Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 142
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 142
Book Description
Extended Defects in Semiconductors
Author: D. B. Holt
Publisher:
ISBN: 9780511277511
Category : Technology & Engineering
Languages : en
Pages : 631
Book Description
Publisher:
ISBN: 9780511277511
Category : Technology & Engineering
Languages : en
Pages : 631
Book Description
Extended Defects in Semiconductors
Author: A Calvallini
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Extended Defects in Semiconductors
Author: EDS (1998, Jaszowiec)
Publisher:
ISBN:
Category :
Languages : en
Pages : 411
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 411
Book Description
A Contribution to the Study of Extended-defects in Semiconductors
Author: Nirmal David Theodore
Publisher:
ISBN:
Category :
Languages : en
Pages : 858
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 858
Book Description
Proceedings Extended Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 411
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 411
Book Description
Papers Presented at the European Research Conference on Extended Defects in Semiconductors
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 367
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 367
Book Description
Defects in Semiconductors
Author:
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458
Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458
Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors