Exciton and Domain Luminescence of Semiconductors

Exciton and Domain Luminescence of Semiconductors PDF Author: N. G. Basov
Publisher: Springer Science & Business Media
ISBN: 1461585732
Category : Science
Languages : en
Pages : 117

Get Book Here

Book Description
This volume, which comprises a collection of papers by leading Soviet researchers, is devoted to topics in the luminescence of semiconductors. An experimental check is made on a series of predictions of the theory of ionization domains. A new low-voltage luminescence of zinc sulfide is described and investigated and is found to be due to a high-frequency electrical instability. A detailed study of the electrical properties of the instability and of the characteristics of the emission testifies to the pre-breakdown character of the electroluminescence and to the acousto electrical nature of the instability. The luminescence excitation spectra of AIN crystals excited in the region of the fundamental absorption contain lines belonging to excitons and their phonon replicas. The symmetry of the electronic and vibrational transitions corresponding to parts of these lines is interpreted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electron - hole liquid. This volume will be of interest to a wide range of scientific workers, particularly those engaged in the study of luminescence and physics of semiconductors.

Exciton and Domain Luminescence of Semiconductors

Exciton and Domain Luminescence of Semiconductors PDF Author: N. G. Basov
Publisher: Springer Science & Business Media
ISBN: 1461585732
Category : Science
Languages : en
Pages : 117

Get Book Here

Book Description
This volume, which comprises a collection of papers by leading Soviet researchers, is devoted to topics in the luminescence of semiconductors. An experimental check is made on a series of predictions of the theory of ionization domains. A new low-voltage luminescence of zinc sulfide is described and investigated and is found to be due to a high-frequency electrical instability. A detailed study of the electrical properties of the instability and of the characteristics of the emission testifies to the pre-breakdown character of the electroluminescence and to the acousto electrical nature of the instability. The luminescence excitation spectra of AIN crystals excited in the region of the fundamental absorption contain lines belonging to excitons and their phonon replicas. The symmetry of the electronic and vibrational transitions corresponding to parts of these lines is interpreted. The results of a study of the scattering of light by electron - hole drops in germanium are cited. The results are discussed on the basis of a theory of exciton condensation in which allowance is made for the diffusion of excitons toward the surface of the drops and for the surface tens ion of the electron - hole liquid. This volume will be of interest to a wide range of scientific workers, particularly those engaged in the study of luminescence and physics of semiconductors.

Electron and Photon Confinement in Semiconductor Nanostructures

Electron and Photon Confinement in Semiconductor Nanostructures PDF Author: Benoît Deveaud
Publisher: IOS Press
ISBN: 9781586033521
Category : Science
Languages : en
Pages : 584

Get Book Here

Book Description
The purpose of this course was to give an overview of the physics of artificial semiconductor structures confining electrons and photons. It furnishes the background for several applications in particular in the domain of optical devices, lasers, light emitting diodes or photonic crystals. The effects related to the microactivity polaritons, which are mixed electromagnetic radiation-exciton states inside a semiconconductor microactivity are covered. The study of the characteristics of such states shows strong relations with the domain of cavity quantum electrodynamics and thus with the investigation of some fundamental theoretical concepts.

Luminescence Spectroscopy of Semiconductors

Luminescence Spectroscopy of Semiconductors PDF Author: Ivan Pelant
Publisher: Oxford University Press, USA
ISBN: 0199588333
Category : Science
Languages : en
Pages : 557

Get Book Here

Book Description
Semiconductor luminescence has been a rapidly expanding field over the last 50 years. This text reviews the whole subject of semiconductor luminescence in one volume.

Optical Properties of Semiconductors

Optical Properties of Semiconductors PDF Author: N. G. Basov
Publisher: Springer Science & Business Media
ISBN: 1461575486
Category : Science
Languages : en
Pages : 189

Get Book Here

Book Description


Spatially Resolved Photo-luminescence and Exciton Diffusion in Semiconductors

Spatially Resolved Photo-luminescence and Exciton Diffusion in Semiconductors PDF Author: N. D. Collis
Publisher:
ISBN:
Category :
Languages : en
Pages :

Get Book Here

Book Description


Excitonic Luminescence Upconversion in a Two-dimensional Semiconductor

Excitonic Luminescence Upconversion in a Two-dimensional Semiconductor PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 5

Get Book Here

Book Description
Photon upconversion is an elementary light-matter interaction process in which an absorbed photon is re-emitted at higher frequency after extracting energy from the medium. Furthermore, this phenomenon lies at the heart of optical refrigeration in solids(1), where upconversion relies on anti-Stokes processes enabled either by rare-earth impurities(2) or exciton-phonon coupling(3). We demonstrate a luminescence upconversion process from a negatively charged exciton to a neutral exciton resonance in monolayer WSe2, producing spontaneous anti-Stokes emission with an energy gain of 30 meV. Polarization-resolved measurements find this process to be valley selective, unique to monolayer semiconductors(4). Since the charged exciton binding energy(5) closely matches the 31 meV A(1)' optical phonon(6-9), we ascribe the spontaneous excitonic anti-Stokes to doubly resonant Raman scattering, where the incident and outgoing photons are in resonance with the charged and neutral excitons, respectively. Additionally, we resolve a charged exciton doublet with a 7 meV splitting, probably induced by exchange interactions, and show that anti-Stokes scattering is efficient only when exciting the doublet peak resonant with the phonon, further confirming the excitonic doubly resonant picture.

The Dissipation of Electromagnetic Waves in Plasmas

The Dissipation of Electromagnetic Waves in Plasmas PDF Author: N. G. Basov
Publisher: Springer Science & Business Media
ISBN: 1475700857
Category : Science
Languages : en
Pages : 105

Get Book Here

Book Description
This anthology includes articles on experimental studies of the interaction of high-power electromag netic waves with collisionless plasmas and with electrons. The nonlinear interaction of waves with plasmas has been investigated both under free space conditions and in waveguides. A study of secondary-emission dis charges was made in order to ascertain their possible effect on measurements in waveguides. The results presented here on the interaction of high-power waves with plasmas and electrons are of interest to a wide range of physicists and engineers concerned with various questions on the interaction of electromagnetic radiation with plasmas, including microwave heating of plasmas and laser fusion. v CONTENTS An Experimental Investigation of Nonlinear Dissipation of Electromagnetic Waves in Inhomogeneous Collisionless Plasmas - G.M. Batanov and V.A. SHin ... 1 Collisionless Absorption of Electromagnetic Waves in Plasmas and "Slow" Nonlinear Phenomena - V. 1. Barinov, 1. R. Gekker, V.A. Ivanov, and D.M. Karfidov. ... 25 ... Nonlinear Effects in the Propagation of Electron Plasma Waves in an Inhomogeneous Plasma Layer - V.A. SHin ..." ... 53 A Study of Secondary-Emission Microwave Discharges with Large Electron Transit Angles - L.V. Grishin, A.A. Dorofeyuk, 1. A. Kossyi, G.S. Luk'yanchikov, and M.M. Savchenko ... ... 63 ...

Handbook of Luminescent Semiconductor Materials

Handbook of Luminescent Semiconductor Materials PDF Author: Leah Bergman
Publisher: CRC Press
ISBN: 1439834806
Category : Science
Languages : en
Pages : 460

Get Book Here

Book Description
Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to stud

Optical Properties of III–V Semiconductors

Optical Properties of III–V Semiconductors PDF Author: Heinz Kalt
Publisher: Springer Science & Business Media
ISBN: 3642582842
Category : Science
Languages : en
Pages : 209

Get Book Here

Book Description
This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.

Coherent Optical Interactions in Semiconductors

Coherent Optical Interactions in Semiconductors PDF Author: R.T. Phillips
Publisher: Springer Science & Business Media
ISBN: 1475797486
Category : Science
Languages : en
Pages : 362

Get Book Here

Book Description
The NATO Advanced Research Workshop on Coherent Optical Processes in Semiconductors was held in Cambridge, England on August 11-14,1993. The idea of holding this Workshop grew from the recent upsurge in activity on coherent transient effects in semiconductors. The development of this field reflects advances in both light sources and the quality of semiconductor structures, such that tunable optical pulses are now routinely available whose duration is shorter than the dephasing time for excitonic states in quantum wells. It was therefore no surprise to the organisers that as the programme developed, there emerged a heavy emphasis on time-resolved four-wave mixing, particularly in quantum wells. Nevertheless, other issues concerned with coherent effects ensured that several papers on related problems contributed some variety. The topics discussed at the workshop centred on what is a rather new field of study, and benefited enormously by having participants representing many of the principal groups working in this area. Several themes emerged through the invited contributions at the Workshop. One important development has been the careful examination of the two-level model of excitonic effects; a model which has been remarkably successful despite the expected complexities arising from the semiconductor band structure. Indeed, modest extensions to the two level model have been able to offer a useful account for some of the complicated polarisation dependence of four-wave mixing signals from GaAs quantum wells. This work clearly is leading to an improved understanding of excitons in confined systems.