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Author: Anjana Devi
Publisher: The Electrochemical Society
ISBN: 9781566774277
Category : Technology & Engineering
Languages : en
Pages : 1128
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Book Description
Author: Anjana Devi
Publisher: The Electrochemical Society
ISBN: 9781566774277
Category : Technology & Engineering
Languages : en
Pages : 1128
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Book Description
Author: M. T. Swihart
Publisher: The Electrochemical Society
ISBN: 1566777453
Category : Vapor-plating
Languages : en
Pages : 1352
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Book Description
This issue of ECS Transactions includes papers presented at the 2009 EuroCVD-17 and CVD 17 symposium. Topical areas covered include fundamentals of chemical vapor deposition (CVD), chemistry of precursors for CVD, synthesis of nanomaterials by CVD and related methods, industrial applications of CVD, and novel CVD reactors and processes. This issue is sold as a two-part set and also includes a CD-ROM of the entire issue.
Author:
Publisher: Forschungszentrum Jülich
ISBN: 3893368701
Category :
Languages : en
Pages : 415
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Book Description
Author: Peter Friedrichs
Publisher: John Wiley & Sons
ISBN: 3527629068
Category : Science
Languages : en
Pages : 528
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Book Description
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
Author: Xiu-Tian Yan
Publisher: Springer Science & Business Media
ISBN: 1848828942
Category : Technology & Engineering
Languages : en
Pages : 352
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Book Description
"Chemical Vapour Deposition: An Integrated Engineering Design for Advanced Materials" focuses on the application of this technology to engineering coatings and, in particular, to the manufacture of high performance materials, such as fibre reinforced ceramic composite materials, for structural applications at high temperatures. This book aims to provide a thorough exploration of the design and applications of advanced materials, and their manufacture in engineering. From physical fundamentals and principles, to optimization of processing parameters and other current practices, this book is designed to guide readers through the development of both high performance materials and the design of CVD systems to manufacture such materials. "Chemical Vapour Deposition: An Integrated Engineering Design for Advanced Materials" introduces integrated design and manufacture of advanced materials to researchers, industrial practitioners, postgraduates and senior undergraduate students.
Author: Ameenah Al-Ahmadi
Publisher: BoD – Books on Demand
ISBN: 953510649X
Category : Science
Languages : en
Pages : 186
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Book Description
The book "State-of-the-art of Quantum Dot System Fabrications" contains ten chapters and devotes to some of quantum dot system fabrication methods that considered the dependence of shape, size and composition parameters on growth methods and conditions such as temperature, strain and deposition rates. This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Material Science, with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems.
Author: M. J. Fasolka
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 390
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Book Description
Combinatorial and high-throughput experimental approaches and related informatics, modeling and data-mining methods have permitted researchers to accelerate the pace at which new, complex materials and device systems are discovered, optimized and understood. Today, the development and application of these revolutionary approaches continue to grow and diversify. This book offers an international, interdisciplinary perspective for scientists and engineers interested in combinatorial, high-throughput and advanced informatics approaches to materials research. The range of disciplines includes materials science; chemistry; physics; electrical, chemical and mechanical engineering; materials modeling; and data systems engineering. Presentations share successful studies, and illuminate current and emerging challenges in areas including: the design and fabrication of combinatorial libraries for materials and devices; high-throughput characterization methods for such systems; automation of instrumentation and data analysis; advanced modeling and data mining techniques for rapid materials design and properties prediction; and data system design and software for combinatorial workflows.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 330
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Book Description
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 400
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Book Description
Author: Evgeni Gusev
Publisher: Springer Science & Business Media
ISBN: 1402043678
Category : Technology & Engineering
Languages : en
Pages : 495
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Book Description
The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.
