Epitaxial Thin Film Growth and Study of Charge and Mass Transport Properties of Mixed Ionic Electronic Conducting GdBaCo2O5+[delta] (GBCO) PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Epitaxial Thin Film Growth and Study of Charge and Mass Transport Properties of Mixed Ionic Electronic Conducting GdBaCo2O5+[delta] (GBCO) PDF full book. Access full book title Epitaxial Thin Film Growth and Study of Charge and Mass Transport Properties of Mixed Ionic Electronic Conducting GdBaCo2O5+[delta] (GBCO) by James Arturo Zapata Correa. Download full books in PDF and EPUB format.
![Epitaxial Thin Film Growth and Study of Charge and Mass Transport Properties of Mixed Ionic Electronic Conducting GdBaCo2O5+[delta] (GBCO) PDF](https://books.google.com/books/content/images/frontcover/g_pEygEACAAJ?fife=w150-h200)
Author: James Arturo Zapata Correa
Publisher:
ISBN:
Category :
Languages : en
Pages : 136
Get Book Here
Book Description
![Epitaxial Thin Film Growth and Study of Charge and Mass Transport Properties of Mixed Ionic Electronic Conducting GdBaCo2O5+[delta] (GBCO) PDF](https://books.google.com/books/content/images/frontcover/g_pEygEACAAJ?fife=w80-h100)
Author: James Arturo Zapata Correa
Publisher:
ISBN:
Category :
Languages : en
Pages : 136
Get Book Here
Book Description
Author: James Arturo Zapata Correa
Publisher:
ISBN: 9788449059049
Category :
Languages : en
Pages : 161
Get Book Here
Book Description
Author: J Matthews
Publisher: Elsevier
ISBN: 0323152120
Category : Science
Languages : en
Pages : 401
Get Book Here
Book Description
Epitaxial Growth, Part A is a compilation of review articles that describe various aspects of the growth of single-crystal films on single-crystal substrates. The collection contains topics on the historical development of epitaxy, the nucleation of thin films, the structure of the interface between film and substrate, and the generation of defects during film growth. The text also provides descriptions of the methods used to prepare and examine thin films and a list of the overgrowth-substrate combinations studied. Mineralogists, materials engineers and scientists, and physicists will find this book a great source of insight.
Author: Albert-László Barabási
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 344
Get Book Here
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author:
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 22
Get Book Here
Book Description
Author: James S. Speck
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 588
Get Book Here
Book Description
Our understanding and control of epitaxial oxide heterostructures has progressed along multiple frontiers including magnetic, dielectric, ferroelectric, and superconducting oxide materials. This has resulted in both independent rediscovery and the successful borrowing of ideas from ceramic science, solid-state physics, and semiconductor epitaxy. A new field of materials science has emerged which aims at the use of the intrinsic properties of various oxide materials in single-crystal thin-film form. Exploiting the potential of these materials, however, will only be possible if many fundamental and engineering questions can be answered. This book represents continued progress toward fulfilling that promise. Technical information on epitaxial oxide thin films from industry, academia and government laboratories is presented. Topics include: dielectrics; ferroelectrics; optics; superconductors; magnetics; magnetoresistance.
Author: B Baliga
Publisher: Elsevier
ISBN: 0323155456
Category : Technology & Engineering
Languages : en
Pages : 337
Get Book Here
Book Description
Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
![Study of Epitaxial Thin Films of Yba2cu3o7-[Delta] on Silicon with Different Buffer Layers PDF](https://books.google.com/books/content/images/frontcover/D4BcAQAACAAJ?fife=w80-h100)
Author: Engang Fu
Publisher: Open Dissertation Press
ISBN: 9781374667174
Category :
Languages : en
Pages :
Get Book Here
Book Description
This dissertation, "Study of Epitaxial Thin Films of YBa2Cu3O7-[delta] on Silicon With Different Buffer Layers" by Engang, Fu, 付恩剛, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled STUDY OF EPITAXIAL THIN FILMS OF YBa Cu O ON 2 3 7-δ SILICON WITH DIFFERENT BUFFER LAYERS submitted by Fu Engang for the degree of Master of Philosophy at The University of Hong Kong in August 2005 Silicon is the most widely used semiconductor in the microelectronic industry. Highly epitaxial thin films of YBa Cu O (YBCO) grown on Si wafers are of 2 3 7-δ special interest for development of superconductor/semiconductor hybrid microelectronic devices and circuits. However, severe interaction between Si and YBCO layer, large mismatch in their lattice constant, and strain due to different thermal expansion often degrade the crystallinity and superconductivity of the grown YBCO layers. In this study, yttria-stabilized zirconia (YSZ) and Eu CuO (ECO) 2 4 were introduced as double buffer layers to improve the growth and properties of the YBCO thin films grown on silicon. Preparation and characterization of epitaxial YBCO/ECO/YSZ/Si multilayer structures were studied. YBCO thin films and the double buffer layers of ECO/YSZ were deposited on the silicon (100) substrate by the pulsed laser deposition (PLD) method. Firstly, the YSZ thin layer was grown epitaxially on silicon (100) substrate to separate YBCO from the Si substrate. Effects of substrate temperature and operating gas pressure on the structure and surface roughness of YSZ thin film were examined and the optimum deposition parameters were determined based on experimental results and comprehensive analysis. X-Ray diffraction (XRD) patterns and rocking curve revealed an epitaxial growth with a perfect c-axis orientation. The YSZ thin films grown on silicon substrate have smooth surface, providing a base on which ECO and YBCO thin film can be grown epitaxially. To further improve the quality of YBCO films, an additional layer of ECO with very stable 214-T' crystal structure was inserted between YBCO and YSZ/Si. The influence of substrate temperature and oxygen gas pressure on the properties of ECO thin films grown on YSZ/Si were experimentally analyzed and the growth conditions were optimized. Finally, the epitaxial YBCO thin films were grown on silicon substrate with double buffer layers of ECO/YSZ. The influences of substrate temperature, oxygen gas pressure and different buffer layers on the properties of YBCO thin films were studied. It was found that the crystal structure, surface roughness and superconductivity of YBCO films could be significantly improved by adding such a double buffer of ECO/YSZ. The quality of the YBCO thin films has been significantly enhanced when compared with that grown on Si with a single YSZ buffer layer and with double buffer layers of Nd CuO (NCO)/YSZ. Such highly 2 4 epitaxial thin films of YBCO grown on silicon should be of great interest for various applications including high-frequency elements, millimeter-wave receivers, and superconducting quantum interference devices. DOI: 10.5353/th_b3637488 Subjects: Thin films Silicon Epitaxy
Author: E. Lendvay
Publisher: Trans Tech Publications Ltd
ISBN: 3035739757
Category : Technology & Engineering
Languages : en
Pages : 979
Get Book Here
Book Description
Proceedings of the 1st International Conference on Epitaxial Crystal Growth, Budapest, Hungary, April 1990
Author: Chang-Beom Eom
Publisher: Materials Research Society
ISBN: 9781558993785
Category : Technology & Engineering
Languages : en
Pages : 0
Get Book Here
Book Description
As a result of the progress towards, and potential realized in electronic and optical device applications, the interest in epitaxial oxide thin films continue to flourish. The understanding of epitaxial oxide heterostructures has progressed, including magnetic, magnetoresistive, dielectric, ferroelectric and superconducting oxide materials. This book focuses on the fundamental issues of oxide epitaxy, microstructural evolution in epitaxy, and physical properties of epitaxial oxide thin films and how these issues relate to device applications. The book provides a vehicle through which groups of scientists working on a set of diverse phenomena could interact and present findings on very common specific themes involving similar materials. Due to the explosive growth of work in the area of colossal magnetoresistive (CMR) materials, especially in epitaxial form, the book also offers a forum to critically examine the fundamental nature of CMR in epitaxial oxide thin films and the relationship between CMR and defect structure. Other areas of emphasis include: ferroelectric memories, nonlinear optical waveguides, microwave electronics and magnetic oxide thin films.
