Epitaxial Growth of Thin Films and Quantum Well Structures of Cadmium Telluride by Molecular Beam Epitaxy PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Epitaxial Growth of Thin Films and Quantum Well Structures of Cadmium Telluride by Molecular Beam Epitaxy PDF full book. Access full book title Epitaxial Growth of Thin Films and Quantum Well Structures of Cadmium Telluride by Molecular Beam Epitaxy by Robert Newton Bicknell. Download full books in PDF and EPUB format.
Author: Robert Newton Bicknell
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
Get Book Here
Book Description
Author: Robert Newton Bicknell
Publisher:
ISBN:
Category :
Languages : en
Pages : 214
Get Book Here
Book Description
Author: Mohamed Henini
Publisher: Elsevier
ISBN: 0128121378
Category : Science
Languages : en
Pages : 790
Get Book Here
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: L.L. Chang
Publisher: Springer Science & Business Media
ISBN: 940095073X
Category : Technology & Engineering
Languages : en
Pages : 718
Get Book Here
Book Description
The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand the ultimate in existing techniques, which often leads to process innova tions. The emergence of a process, on the other hand, invariably creates opportunities for device improvement and invention. This intimate relationship between the two has most recently been witnessed in MBE and heterostructures, the subject of this Institute. This volume is divided into several sections. Chapter 1 serves as an introduction by providing a perspective of the subject. This is followed by two sections, each containing four chapters, Chapters 2-5 addressing the principles of the MBE process and Chapters 6-9 describ ing its use in the growth of a variety of semiconductors and heteros tructures. The next two sections, Chapters to-II and Chapters 12-15, treat the theory and the electronic properties of the heterostructures, respectively. The focus is on energy quantization of the two dimensional electron system. Chapters 16-17 are devoted to device structures, including both field-effect transistors and lasers and detec tors.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 10
Get Book Here
Book Description
The goal of this project was to obtain an atomic-scale understanding of the surface processes that underlie the growth by molecular beam epitaxy (MBE) of HgCdTe on As-passivated Si surfaces. It is generally recognized that in MBE the first few monolayers determine the quality and structure of the final crystalline film. In principle, the methods of surface science can provide the critically needed information about the initial stages of film growth. However, because of the volatile and toxic nature of As and CdTe, special equipment had to be constructed before the deposition processes could be studied. The resulting unique apparatus allowed us to deposit As and CdTe onto Si substrates in a separate preparation chamber with subsequent transfer under vacuum into the main analysis chamber. We used the apparatus to characterize As on several different Si surfaces with the techniques of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and Low Energy Electron Diffraction (LEED). The surface analyses were performed with instrumentation that was nearly twenty years old, which slowed progress due to the need for frequent and difficult repairs. Unanticipated budget cuts also impeded progress. Nevertheless, several conference presentations and publications resulted from this work.
Author: Robin F.C. Farrow
Publisher: Elsevier
ISBN: 0815518404
Category : Technology & Engineering
Languages : en
Pages : 795
Get Book Here
Book Description
In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized to prepare and explore a range of distinct and diverse materials. For each of these materials systems MBE has played a key role both in their development and application to devices.
Author: Ilgu Yun
Publisher: BoD – Books on Demand
ISBN: 9535108956
Category : Technology & Engineering
Languages : en
Pages : 380
Get Book Here
Book Description
This book represents recent progress and development of the photodiodes including the fundamental reviews and the specific applications developed by the authors themselves. The key idea of this book is that it allows authors to deal with a wide range of backgrounds and research progresses in photodiode-related areas. With respect to the original collection of the book chapters, this book contains several improvements and new problems and related solutions are also discussed in the areas from fundamental physics and design to device and circuit applications. The book is intended for graduate students, engineers, and researchers who are especially interested in the area of optoelectronic device applications, including photodiodes, solar cells, CMOS image sensors, Optoelectronic Integrated Circuits, etc.
Author:
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 250
Get Book Here
Book Description
Author: Paola Prete
Publisher: BoD – Books on Demand
ISBN: 9537619796
Category : Science
Languages : en
Pages : 430
Get Book Here
Book Description
This volume is intended to orient the reader in the fast developing field of semiconductor nanowires, by providing a series of self-contained monographs focusing on various nanowire-related topics. Each monograph serves as a short review of previous results in the literature and description of methods used in the field, as well as a summary of the authors recent achievements on the subject. Each report provides a brief sketch of the historical background behind, the physical and/or chemical principles underlying a specific nanowire fabrication/characterization technique, or the experimental/theoretical methods used to study a given nanowire property or device. Despite the diverse topics covered, the volume does appear as a unit. The writing is generally clear and precise, and the numerous illustrations provide an easier understanding of the phenomena described. The volume contains 20 Chapters covering altogether many (although not all) semiconductors of technological interest, starting with the IV-IV group compounds (SiC and SiGe), carrying on with the binary and ternary compounds of the III-V (GaAs, AlGaAs, GaSb, InAs, GaP, InP, and GaN) and II-VI (HgTe, HgCdTe) families, the metal oxides (CuO, ZnO, ZnCoO, tungsten oxide, and PbTiO3), and finishing with Bi (a semimetal).
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2304
Get Book Here
Book Description
