Epitaxial Growth of Indium-based Compound Semiconductors by Metalorganic Chemical Vapor Deposition PDF Download
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Author: Jyh-Chia Chen
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 165
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Book Description
Author: Jyh-Chia Chen
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 165
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Book Description
Author: Anthony C. Jones
Publisher: John Wiley & Sons
ISBN: 3527614621
Category : Science
Languages : en
Pages : 352
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Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Author: Kam Tai Chan
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 450
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Book Description
Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Author: V. G. Keramidas
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 314
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Book Description
Author: Mark Andrew Emanuel
Publisher:
ISBN:
Category :
Languages : en
Pages : 230
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Book Description
Metalorganic chemical vapor deposition (MOCVD) is an epitaxial crystal growth technique capable of producing high-quality compound semiconductors in thick or thin layers with abrupt junctions, excellent areal uniformity, and precisely controlled thickness, doping and composition. In this work the desired characteristics of an MOCVD system are described, and design criteria necessary for their implementation are identified. Special emphasis is placed on defensive design strategies intended to limit the extent of system perturbation due to various component failure modes and normal maintenance procedures. The design of reactor computer control software is also considered, and algorithms for the growth of layers graded in both doping and composition are presented.
Author: National Aeronautics and Space Adm Nasa
Publisher: Independently Published
ISBN: 9781792631511
Category :
Languages : en
Pages : 28
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Book Description
The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices. Collis, Ward J. and Abul-Fadl, Ali NASA-CR-182346, NAS 1.26:182346 NAG1-403...
Author: Gerald B. Stringfellow
Publisher: Elsevier
ISBN: 0323139175
Category : Science
Languages : en
Pages : 417
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Book Description
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702
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Book Description
Author: Ko-ichi Yamaguchi
Publisher:
ISBN:
Category :
Languages : en
Pages : 4
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Book Description
Selective epitaxial growth by metalorganic chemical vapor deposition (MOCVD) is expected to be one of the important technologies to fabricate microstructures of semiconductor devices. Recently, selective epitaxial growth has been applied to fabricate quantum well wire's. In the fabrication of such a fine structure, good selectivity of deposition and excellent controllability of the ultrafine structure of epilayers is required. Many studies concerning to the selective epitaxial growth of III-V compound semiconductors by MOCVD have been reported. We investigated the selective epitaxial growth of GaAs and AlGaAs by atmospheric pressure (AP)-MOCVD using TMGA and TMAI.
