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Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
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Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Timothy David Veal
Publisher: CRC Press
ISBN: 1439859612
Category : Technology & Engineering
Languages : en
Pages : 707
Get Book Here
Book Description
Written by recognized leaders in this dynamic and rapidly expanding field, Indium Nitride and Related Alloys provides a clear and comprehensive summary of the present state of knowledge in indium nitride (InN) research. It elucidates and clarifies the often confusing and contradictory scientific literature to provide valuable and rigorous insight into the structural, optical, and electronic properties of this quickly emerging semiconductor material and its related alloys. Drawing from both theoretical and experimental perspectives, it provides a thorough review of all data since 2001 when the band gap of InN was identified as 0.7 eV. The superior transport and optical properties of InN and its alloys offer tremendous potential for a wide range of device applications, including high-efficiency solar cells and chemical sensors. Indeed, the now established narrow band gap nature of InN means that the InGaN alloys cover the entire solar spectrum and InAlN alloys span from the infrared to the ultraviolet. However, with unsolved problems including high free electron density, difficulty in characterizing p-type doping, and the lack of a lattice-matched substrate, indium nitride remains perhaps the least understood III-V semiconductor. Covering the epitaxial growth, experimental characterization, theoretical understanding, and device potential of this semiconductor and its alloys, this book is essential reading for both established researchers and those new to the field.
Author: Francis Gudyanga
Publisher: CRC Press
ISBN: 1000730239
Category : Technology & Engineering
Languages : en
Pages : 306
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Book Description
Africa’s dire need to industrialize is universally acknowledged and it is evident that the continent’s vast mineral resources can catalyze that industrialization. This requires the promotion of local beneficiation and value addition of minerals to yield materials on which modern Africa’s industry and society can rely. This book is, therefore, about transforming Africa’s comparative advantages in minerals into the continent’s competitive edge regarding materials. Mineral beneficiation and value addition form the basis and provide opportunities for mineral-driven Africa’s industrialization. The scope of the book is three-fold with inter-connected relationships: Information, Technical, and Policy oriented. It will be a useful reference material for mining undergraduate students on beneficiation and value addition of each of the minerals found in Africa. The book, while presenting a broad overview of beneficiation and value addition of Africa’s minerals, provides crucial starting material for postgraduate research students and R&D institutions who wish to delve into more advanced methods of extraction and utilization of mineral-derived materials that are in Africa for the purpose of industrialization of the continent.
Author: Hongxing Jiang
Publisher: CRC Press
ISBN: 1040290787
Category : Technology & Engineering
Languages : en
Pages : 426
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Book Description
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices.
