Epitaxial Growth of 6H Silicon Carbide in the Temperature Range 1320 ̊to 1390 ̊C PDF Download
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Author: Herbert A. Will
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 20
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Author: Herbert A. Will
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 20
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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 792
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Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
ISBN: 1118313550
Category : Technology & Engineering
Languages : en
Pages : 565
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Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1446
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Book Description
February issue includes Appendix entitled Directory of United States Government periodicals and subscription publications; September issue includes List of depository libraries; June and December issues include semiannual index
Author: Cary Y. Yang
Publisher: Springer Science & Business Media
ISBN: 3642848044
Category : Science
Languages : en
Pages : 439
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Book Description
Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 854
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Author: United States. Superintendent of Documents
Publisher:
ISBN:
Category : United States
Languages : en
Pages : 1466
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Book Description
Author:
Publisher:
ISBN:
Category : Government publications
Languages : en
Pages : 1386
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Author: A. H. Agajanian
Publisher: Ifi/Plenum
ISBN:
Category : Reference
Languages : en
Pages : 980
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Author:
Publisher:
ISBN:
Category : Electric engineering
Languages : en
Pages : 120
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