Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description
Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Liquid Phase Deposited Zirconium Oxide
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 76
Book Description
Enhancement Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Self-Aligned Gate-Recessed Process
Author: 徐健軒
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 70
Book Description
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Using Liquid-phase Deposited High-k Gate Dielectrics
Author: 吳祖儀
Publisher:
ISBN:
Category :
Languages : en
Pages : 91
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 91
Book Description
Enhancement-Mode AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors by Fluorine Plasma Treatment
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 93
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 93
Book Description
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors Performance with Al2O3/ZrO2 Stacked Gate Dielectric Layers
Author: 黃晟瑜
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 84
Book Description
Enhancement-mode Metal-Oxide-Semiconductor High Electron Mobility Transistors with Hafnium Oxide by Atomic Layer Deposition
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment
Author: 楊舜凱
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 104
Book Description
High-performance Enhancement-mode AlGaN/GaN MOS-HEMTs with Fluorinated Stack Gate Dielectrics and Thin Barrier Layer*Project Supported by the National Natural Science Foundation of China (Nos. 61504125, 61474101, 61106130 61076120, 61505181), and the Natural Science Foundation of Jiangsu Province of China (Nos. BK20131072, BE2012007, BK2012516).
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Abstract: We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2 O3 /La x Al1− x O3 /Al2 O3 stack ( x ≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Abstract: We present high-performance enhancement-mode AlGaN/GaN metal—oxide—semiconductor high-electron mobility transistors (MOS-HEMTs) by a fluorinated gate dielectric technique. A nanolaminate of an Al2 O3 /La x Al1− x O3 /Al2 O3 stack ( x ≈0.33) grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer. Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique, delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm. The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
Normally-off AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with RF-Sputtered Hafnium Oxide
Author: 楊富鈞
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 90
Book Description
Preparation and Characterization of AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors
Author: 黃健峻
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 240
Book Description