Electronic Structure of Metal-Semiconductor Contacts

Electronic Structure of Metal-Semiconductor Contacts PDF Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 9400906579
Category : Science
Languages : en
Pages : 302

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Book Description
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Electronic Structure of Metal-Semiconductor Contacts

Electronic Structure of Metal-Semiconductor Contacts PDF Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 9400906579
Category : Science
Languages : en
Pages : 302

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Book Description
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Electronic Structure of Metal-Semiconductor Contacts

Electronic Structure of Metal-Semiconductor Contacts PDF Author: Winfried Monch
Publisher:
ISBN: 9789400906587
Category :
Languages : en
Pages : 312

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Book Description


Electronic Structure of Semiconductor Heterojunctions

Electronic Structure of Semiconductor Heterojunctions PDF Author: Giorgio Margaritondo
Publisher: Springer Science & Business Media
ISBN: 9400930739
Category : Science
Languages : en
Pages : 348

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Book Description
E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles

Electronic Structure of Semiconductor Interfaces

Electronic Structure of Semiconductor Interfaces PDF Author: Winfried Mönch
Publisher: Springer Nature
ISBN: 3031590643
Category : Condensed matter
Languages : en
Pages : 156

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Book Description
This concise volume examines the characteristic electronic parameters of semiconductor interfaces, namely the barrier heights of metal-semiconductor or Schottky contacts and the valence-band discontinuities of semiconductor-semiconductor interfaces or heterostructures. Both are determined by the same concept, namely the wave-function tails of electron states overlapping a semiconductor band gap directly at the interface. These interface-induced gap states (IFIGS) result from the complex band structure of the corresponding semiconductor. The IFIGS are characterized by two parameters, namely by their branch point, at which their charge character changes from predominantly valence-band- to conduction-band-like, and secondly by the proportionality factor or slope parameter of the corresponding electric-dipole term, which varies in proportion to the difference in the electronegativities of the two solids forming the interface. This IFIGS-and-electronegativity concept consistently and quantitatively explains the experimentally observed barrier heights of Schottky contacts as well as the valence-band offsets of heterostructures. Insulators are treated as wide band-gap semiconductors. In addition, this book: Explains intrinsic interface states of electron states that overlap the band gap of a semiconductor at the interface Includes experimental data on Schottky contacts including carrier height, ideality factor and flat-band barrier height Compares of Theoretical and Experimental Data for a range of semiconductors.

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces PDF Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662069458
Category : Technology & Engineering
Languages : en
Pages : 269

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Book Description
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

Semiconductor Surfaces and Interfaces

Semiconductor Surfaces and Interfaces PDF Author: Winfried Mönch
Publisher: Springer Science & Business Media
ISBN: 3662044595
Category : Science
Languages : en
Pages : 548

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Book Description
This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

Energy Level Alignment and Electron Transport Through Metal/Organic Contacts

Energy Level Alignment and Electron Transport Through Metal/Organic Contacts PDF Author: Enrique Abad
Publisher: Springer Science & Business Media
ISBN: 3642309070
Category : Science
Languages : en
Pages : 211

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Book Description
In recent years, ever more electronic devices have started to exploit the advantages of organic semiconductors. The work reported in this thesis focuses on analyzing theoretically the energy level alignment of different metal/organic interfaces, necessary to tailor devices with good performance. Traditional methods based on density functional theory (DFT), are not appropriate for analyzing them because they underestimate the organic energy gap and fail to correctly describe the van der Waals forces. Since the size of these systems prohibits the use of more accurate methods, corrections to those DFT drawbacks are desirable. In this work a combination of a standard DFT calculation with the inclusion of the charging energy (U) of the molecule, calculated from first principles, is presented. Regarding the dispersion forces, incorrect long range interaction is substituted by a van der Waals potential. With these corrections, the C60, benzene, pentacene, TTF and TCNQ/Au(111) interfaces are analyzed, both for single molecules and for a monolayer. The results validate the induced density of interface states model.

Wspc Reference On Organic Electronics, The: Organic Semiconductors (In 2 Volumes)

Wspc Reference On Organic Electronics, The: Organic Semiconductors (In 2 Volumes) PDF Author: Seth R Marder
Publisher: World Scientific
ISBN: 9814699241
Category : Science
Languages : en
Pages : 896

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Book Description
This 2-volume set provides the reader with a basic understanding of the foundational concepts pertaining to the design, synthesis, and applications of conjugated organic materials used as organic semiconductors, in areas including organic photovoltaic devices, light-emitting diodes, field-effect transistors, spintronics, actuation, bioelectronics, thermoelectrics, and nonlinear optics.While there are many monographs in these various areas, the emphasis here is both on the fundamental chemistry and physics concepts underlying the field of organic semiconductors and on how these concepts drive a broad range of applications. This makes the volumes ideal introductory textbooks in the subject. They will thus offer great value to both junior and senior scientists working in areas ranging from organic chemistry to condensed matter physics and materials science and engineering.Number of Illustrations and Tables: 168 b/w illus., 242 colour illus., 13 tables.

Electronic Structure

Electronic Structure PDF Author:
Publisher: Elsevier
ISBN: 0080530753
Category : Technology & Engineering
Languages : en
Pages : 1071

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Book Description
This book is the second volume in the Handbook of Surface Science series and deals with aspects of the electronic structure of surfaces as investigated by means of the experimental and theoretical methods of physics. The importance of understanding surface phenomena stems from the fact that for many physical and chemical phenomena, the surface plays a key role: in electronic, magnetic, and optical devices, in heterogenous catalysis, in epitaxial growth, and the application of protective coatings, for example. Therefore a better understanding and, ultimately, a predictive description of surface and interface properties is vital for the progress of modern technology. An investigation of surface electronic structure is also central to our understanding of all aspects of surfaces from a fundamental point of view. The chapters presented here review the goals achieved in the field and map out the challenges ahead, both in experiment and theory.

The Physics of Semiconductors

The Physics of Semiconductors PDF Author: Marius Grundmann
Publisher: Springer Science & Business Media
ISBN: 3540346619
Category : Science
Languages : en
Pages : 702

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Book Description
Brings the reader to an overview of the subject as a whole and to the point where they can specialize and enter supervised laboratory research Provides a balance between aspects of solid state and semiconductor physics and the concepts of various semiconductor devices and their applications in electric and photonic devices. Proffers explicit formulas (with the help of Mathematica) for as many as possible results, going beyond current textbook equations, thus makes easier to understand for undergrads.