Electronic Devices Architectures for the NANO-CMOS Era PDF Download
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Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 9814241296
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 9814241296
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Simon Deleonibus
Publisher: CRC Press
ISBN: 0429533624
Category : Technology & Engineering
Languages : en
Pages : 302
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Book Description
In this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Angsuman Sarkar
Publisher: Elsevier
ISBN: 0323918336
Category : Technology & Engineering
Languages : en
Pages : 550
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Book Description
Approx.528 pagesApprox.528 pages
Author: D. Nirmal
Publisher: CRC Press
ISBN: 1000475344
Category : Technology & Engineering
Languages : en
Pages : 303
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Book Description
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Author: Alexei Nazarov
Publisher: Springer Science & Business Media
ISBN: 3642158684
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author: Hei Wong
Publisher: CRC Press
ISBN: 1351833286
Category : Technology & Engineering
Languages : en
Pages : 251
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Book Description
According to Moore’s Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devices, and fabrication processes for high-k gate dielectric materials, Nano-CMOS Gate Dielectric Engineering systematically describes how the fundamental electronic structures and other material properties of the transition metals and rare earth metals affect the electrical properties of the dielectric films, the dielectric/silicon and the dielectric/metal gate interfaces, and the resulting device properties. Specific topics include the problems and solutions encountered with high-k material thermal stability, defect density, and poor initial interface with silicon substrate. The text also addresses the essence of thin film deposition, etching, and process integration of high-k materials in an actual CMOS process. Fascinating in both content and approach, Nano-CMOS Gate Dielectric Engineering explains all of the necessary physics in a highly readable manner and supplements this with numerous intuitive illustrations and tables. Covering almost every aspect of high-k gate dielectric engineering for nano-CMOS technology, this is a perfect reference book for graduate students needing a better understanding of developing technology as well as researchers and engineers needing to get ahead in microelectronic engineering and materials science.
Author: Klaus D. Sattler
Publisher: CRC Press
ISBN: 1000702502
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
21st Century Nanoscience - A Handbook: Nanophotonics, Nanoelectronics, and Nanoplasmonics (Volume 6) will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics by the same editor published in the fall of 2010 and was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. This sixth volume in a ten-volume set covers nanophotonics, nanoelectronics, and nanoplasmonics. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanophysics extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.
Author: Suman Lata Tripathi
Publisher: CRC Press
ISBN: 1000168174
Category : Technology & Engineering
Languages : en
Pages : 414
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Book Description
This book facilitates the VLSI-interested individuals with not only in-depth knowledge, but also the broad aspects of it by explaining its applications in different fields, including image processing and biomedical. The deep understanding of basic concepts gives you the power to develop a new application aspect, which is very well taken care of in this book by using simple language in explaining the concepts. In the VLSI world, the importance of hardware description languages cannot be ignored, as the designing of such dense and complex circuits is not possible without them. Both Verilog and VHDL languages are used here for designing. The current needs of high-performance integrated circuits (ICs) including low power devices and new emerging materials, which can play a very important role in achieving new functionalities, are the most interesting part of the book. The testing of VLSI circuits becomes more crucial than the designing of the circuits in this nanometer technology era. The role of fault simulation algorithms is very well explained, and its implementation using Verilog is the key aspect of this book. This book is well organized into 20 chapters. Chapter 1 emphasizes on uses of FPGA on various image processing and biomedical applications. Then, the descriptions enlighten the basic understanding of digital design from the perspective of HDL in Chapters 2–5. The performance enhancement with alternate material or geometry for silicon-based FET designs is focused in Chapters 6 and 7. Chapters 8 and 9 describe the study of bimolecular interactions with biosensing FETs. Chapters 10–13 deal with advanced FET structures available in various shapes, materials such as nanowire, HFET, and their comparison in terms of device performance metrics calculation. Chapters 14–18 describe different application-specific VLSI design techniques and challenges for analog and digital circuit designs. Chapter 19 explains the VLSI testability issues with the description of simulation and its categorization into logic and fault simulation for test pattern generation using Verilog HDL. Chapter 20 deals with a secured VLSI design with hardware obfuscation by hiding the IC’s structure and function, which makes it much more difficult to reverse engineer.
Author: Chinmay Kumar Maiti
Publisher: World Scientific
ISBN: 9814713090
Category : Technology & Engineering
Languages : en
Pages : 465
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Book Description
Micro and nanoelectronic devices are the prime movers for electronics, which is essential for the current information age. This unique monograph identifies the key stages of advanced device design and integration in semiconductor manufacturing. It brings into one resource a comprehensive device design using simulation. The book presents state-of-the-art semiconductor device design using the latest TCAD tools.Professionals, researchers, academics, and graduate students in electrical & electronic engineering and microelectronics will benefit from this reference text.
Author: Kevin Zhang
Publisher: Springer Science & Business Media
ISBN: 0387884971
Category : Technology & Engineering
Languages : en
Pages : 390
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Book Description
Kevin Zhang Advancement of semiconductor technology has driven the rapid growth of very large scale integrated (VLSI) systems for increasingly broad applications, incl- ing high-end and mobile computing, consumer electronics such as 3D gaming, multi-function or smart phone, and various set-top players and ubiquitous sensor and medical devices. To meet the increasing demand for higher performance and lower power consumption in many different system applications, it is often required to have a large amount of on-die or embedded memory to support the need of data bandwidth in a system. The varieties of embedded memory in a given system have alsobecome increasingly more complex, ranging fromstatictodynamic and volatile to nonvolatile. Among embedded memories, six-transistor (6T)-based static random access memory (SRAM) continues to play a pivotal role in nearly all VLSI systems due to its superior speed and full compatibility with logic process technology. But as the technology scaling continues, SRAM design is facing severe challenge in mainta- ing suf?cient cell stability margin under relentless area scaling. Meanwhile, rapid expansion in mobile application, including new emerging application in sensor and medical devices, requires far more aggressive voltage scaling to meet very str- gent power constraint. Many innovative circuit topologies and techniques have been extensively explored in recent years to address these challenges.
