Electron Transport in Compound Semiconductors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Electron Transport in Compound Semiconductors PDF full book. Access full book title Electron Transport in Compound Semiconductors by B.R. Nag. Download full books in PDF and EPUB format.
Author: B.R. Nag
Publisher: Springer Science & Business Media
ISBN: 3642814166
Category : Science
Languages : en
Pages : 476
Get Book Here
Book Description
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Author: B.R. Nag
Publisher: Springer Science & Business Media
ISBN: 3642814166
Category : Science
Languages : en
Pages : 476
Get Book Here
Book Description
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Author: Massimo V. Fischetti
Publisher: Springer
ISBN: 3319011014
Category : Technology & Engineering
Languages : en
Pages : 481
Get Book Here
Book Description
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Author: Carlo Jacoboni
Publisher: Springer Science & Business Media
ISBN: 3642105866
Category : Science
Languages : en
Pages : 590
Get Book Here
Book Description
This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.
Author: Electrochemical Society. Electronics Division
Publisher: The Electrochemical Society
ISBN: 9781566773690
Category : Technology & Engineering
Languages : en
Pages : 380
Get Book Here
Book Description
Author: Sandip Tiwari
Publisher: Academic Press
ISBN: 148328929X
Category : Science
Languages : en
Pages : 845
Get Book Here
Book Description
This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Author: Sadao Adachi
Publisher: John Wiley & Sons
ISBN: 9780471573296
Category : Science
Languages : en
Pages : 342
Get Book Here
Book Description
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Author: Allan H Johnston
Publisher: World Scientific
ISBN: 9814467650
Category : Technology & Engineering
Languages : en
Pages : 376
Get Book Here
Book Description
This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author:
Publisher: Elsevier
ISBN: 0080541011
Category : Science
Languages : en
Pages : 333
Get Book Here
Book Description
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Author: Kamakhya Prasad Ghatak
Publisher: Springer Science & Business Media
ISBN: 354079557X
Category : Science
Languages : en
Pages : 471
Get Book Here
Book Description
Focusing only on the Einstein relation in compound semiconductors and their nanostructures, this book deals with open research problems from carbon nanotubes to quantum wire superlattices with different band structures, and other field assisted systems.
Author: Kevin L. Jensen
Publisher: John Wiley & Sons
ISBN: 1119051894
Category : Science
Languages : en
Pages : 714
Get Book Here
Book Description
A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.
