Physics of Quantum Electron Devices PDF Download
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Author: Federico Capasso
Publisher: Springer Science & Business Media
ISBN: 3642747515
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Author: Federico Capasso
Publisher: Springer Science & Business Media
ISBN: 3642747515
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
The ability to engineer the bandstructure and the wavefunction over length scales previously inaccessible to technology using artificially structured materials and nanolithography has led to a new class of electron semiconductor devices whose operation is controlled by quantum effects. These structures not only represent exciting tools for investigating new quantum phenomena in semiconductors, but also offer exciting opportunities for applications. This book gives the first comprehensive treatment of the physics of quantum electron devices. This interdisciplinary field, at the junction between material science, physics and technology, has witnessed an explosive growth in recent years. This volume presents a detailed coverage of the physics of the underlying phenomena, and their device and circuit applications, together with fabrication and growth technology.
Author: Zahid Ali Khan Durrani
Publisher: World Scientific
ISBN: 1848164130
Category : Science
Languages : en
Pages : 300
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Book Description
This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.
Author: Stanford University Stanford Electronics Laboratories
Publisher:
ISBN:
Category :
Languages : en
Pages : 110
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Book Description
Author: Harold L. Grubin
Publisher: Springer Science & Business Media
ISBN: 1489923446
Category : Science
Languages : en
Pages : 474
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Book Description
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
Author: Patrick Fay
Publisher: Springer
ISBN: 3030202089
Category : Technology & Engineering
Languages : en
Pages : 308
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Book Description
This book brings together recent research by scientists and device engineers working on both aggressively-scaled conventional transistors as well as unconventional high-frequency device concepts in the III-N material system. Device concepts for mm-wave to THz operation based on deeply-scaled HEMTs, as well as distributed device designs based on plasma-wave propagation in polarization-induced 2DEG channels, tunneling, and hot-carrier injection are discussed in detail. In addition, advances in the underlying materials science that enable these demonstrations, and advancements in metrology that permit the accurate characterization and evaluation of these emerging device concepts are also included. Targeting readers looking to push the envelope in GaN-based electronics device research, this book provides a current, comprehensive treatment of device concepts and physical phenomenology suitable for applying GaN and related materials to emerging ultra-high-frequency applications. Offers readers an integrated treatment of the state of the art in both conventional (i.e., HEMT) scaling as well as unconventional device architectures suitable for amplification and signal generation in the mm-wave and THz regime using GaN-based devices, written by authors that are active and widely-known experts in the field; Discusses both conventional scaled HEMTs (into the deep mm-wave) as well as unconventional approaches to address the mm-wave and THz regimes; Provides “vertically integrated” coverage, including materials science that enables these recent advances, as well as device physics & design, and metrology techniques; Includes fundamental physics, as well as numerical simulations and experimental realizations.
Author: Francesco Iannuzzo
Publisher: Energy Engineering
ISBN: 9781785619175
Category : Technology & Engineering
Languages : en
Pages : 504
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Book Description
Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.
Author: Joachim N. Burghartz
Publisher: John Wiley & Sons
ISBN: 1118517539
Category : Technology & Engineering
Languages : en
Pages : 637
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Book Description
Winner, 2013 PROSE Award, Engineering and Technology Concise, high quality and comparative overview of state-of-the-art electron device development, manufacturing technologies and applications Guide to State-of-the-Art Electron Devices marks the 60th anniversary of the IRE electron devices committee and the 35th anniversary of the IEEE Electron Devices Society, as such it defines the state-of-the-art of electron devices, as well as future directions across the entire field. Spans full range of electron device types such as photovoltaic devices, semiconductor manufacturing and VLSI technology and circuits, covered by IEEE Electron and Devices Society Contributed by internationally respected members of the electron devices community A timely desk reference with fully-integrated colour and a unique lay-out with sidebars to highlight the key terms Discusses the historical developments and speculates on future trends to give a more rounded picture of the topics covered A valuable resource R&D managers; engineers in the semiconductor industry; applied scientists; circuit designers; Masters students in power electronics; and members of the IEEE Electron Device Society.
Author: Fan Ren
Publisher: World Scientific
ISBN: 9812382461
Category : Technology & Engineering
Languages : en
Pages : 526
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Book Description
Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.
Author: Christopher Siu
Publisher: Springer Nature
ISBN: 3030805387
Category : Technology & Engineering
Languages : en
Pages : 247
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Book Description
This textbook for a one-semester course in Electrical Circuits and Devices is written to be concise, understandable, and applicable. Every new concept is illustrated with numerous examples and figures, in order to facilitate learning. The simple and clear style of presentation is complemented by a spiral and modular approach to the topic. This method supports the learning of those who are new to the field, as well as provides in-depth coverage for those who are more experienced. The author discusses electronic devices using a spiral approach, in which key devices such as diodes and transistors are first covered with simple models that beginning students can easily understand. After the reader has grasped the fundamental concepts, the topics are covered again with greater depth in the latter chapters.
Author: Suman Lata Tripathi
Publisher:
ISBN: 9781536165562
Category : Electronic apparatus and appliances
Languages : en
Pages : 194
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Book Description
This book deals with some emerging semiconductor devices and their applications in terms of electronic circuits. The basic concept plays a key role in development of any new electronic devices and circuits. The implementation of complex integrated circuits becomes easier with understanding of basic concepts of solid-state devices and its circuit behaviour. The book covers the latest trends in development of advanced electronic devices and applications for undergraduate, graduate and post graduate level courses. It combines the right blend of theory and practice to present a simplified and methodical way to develop researchers' understanding of the clarity between theoretical, practical and simulated results in the analysis of solid-state devices, circuit characteristics and other important issues based on their applications. The book also covers the broad applications of electronic devices in biomedical and low power portable smart IOT systems. This book is well organized into 13 chapters. Chapters 1 to 4 cover design of low power FET devices compatible to technology scaling trends meeting required performance enhancement in terms of power, delay and speed. Chapter 5 and 6 are focused on analogue application of CMOS technology. Chapter 7 describes power MOSFET design with advance materials for lowest possible on-resistance resulting into enhance performance. Chapter 8 deals with biomedical application of advance electronic devices introducing new materials and structure. Chapter 9 introduces a neuromorphic model and real-time simulation for the study of biological neuron model in the human body on circuit level. Chapter 10 and 11 presents the applications of sensors growing over a wide range of sensing targets along with advance sensing technology for human-computer interaction. Chapter 12 and 13 describe optoelectronic devices like photodetectors, optical sensors and solar cells etc.
