Electron Ballistic Effects in III-V Semiconductors PDF Download

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Electron Ballistic Effects in III-V Semiconductors

Electron Ballistic Effects in III-V Semiconductors PDF Author: G. Y. Robinson
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Languages : en
Pages : 9

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Book Description
The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas (TEG) of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAs/AlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.