Electroabsorption Modulation in Strained-layer Inx̳Ga1-x̳As/GaAs Multiple Quantum Wells PDF Download
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Author: Shigeru Niki
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
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Author: Shigeru Niki
Publisher:
ISBN:
Category :
Languages : en
Pages : 364
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Author: Timothy Edwin Van Eck
Publisher:
ISBN:
Category :
Languages : en
Pages : 276
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Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606
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Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
![Quaternary InGaAlAs/InAlAs Quantum Wells for 1.3 [mu]m Electroabsorption Modulators PDF](https://books.google.com/books/content/images/frontcover/EDZGAQAAIAAJ?fife=w80-h100)
Author: An-Nien Cheng
Publisher:
ISBN:
Category :
Languages : en
Pages : 422
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Author: Chun-Pi Chang
Publisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 324
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Author: Raymond Arrathoon
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 582
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Author: K. Kawashima
Publisher:
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Category :
Languages : en
Pages : 4
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Recently, there have been a great deal of attention in strained In. Gal-xAs heterostructures grown on the GaAs substrate. This is because the strained systems can provide additional freedom for the material design and various advantages to optoelectronic device applications. For applications to vertical-beam optical devices which are very useful for parallel optical beam processing, however, the advantage offered by the InxGal-xAs material system is crucial. This is because the exciton resonance absorption can occur at energy below the bandgap of the GaAs substrate. This means that there is no need to remove the substrate to transmit the radiation at wavelength of interest. This is in fact the great advantage of the InxGal-xAs material system especially for an integrated-type device. Although recent advancement of the crystal growth techniques enables us to prepare high quality strained epitaxial layers, basic understanding of the band lineup problem is still controversial. Investigations of the pseudomorphic strained heterostructures are therefore important in tailoring the device characteristics.
Author: Timothy Everett Ostromek
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 394
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Author:
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 430
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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