Author: Timothy Everett Ostromek
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 394

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Author: Timothy Edwin Van Eck
Publisher:
ISBN:
Category :
Languages : en
Pages : 276

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Book Description

Author: M. O. Manasreh
Publisher: CRC Press
ISBN: 9789056995676
Category : Science
Languages : en
Pages : 606

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Book Description
Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.

Author: Mary F. Gorschboth
Publisher:
ISBN:
Category :
Languages : en
Pages : 150

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Author: Emmanuel Rosencher
Publisher: Springer Science & Business Media
ISBN:
Category : Science
Languages : en
Pages : 368

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Book Description
Some 30 lectures consider phenomena associated with electrical charges passing through very thin (less than 15 nm) layers of semiconductor material. The optical nonlinearities that result have application in the electronic-devices industry, and provide a real-life example of theoretical one-dimensio"

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
We have used an external electric field to control important properties of semiconductor quantum wells. Specifically: (1) We have modified the exciton-exciton interaction. This interaction is determined by many-body effects, which depend on the overlap between the exciton's electron and hole wavefunctions, and is manifested in the energy difference between photoluminescence spectra with different polarizations. In time-resolved photoluminescence (PL) experiments with circular polarization we have observed that spectral difference, which we controlled by an electric field applied to GaAs-GaAlAs coupled quantum wells. Our results confirm the predictions of theory but also point out its limitations to fully explain our observations. (2) We have reversed the valence-band ordering in strained-layer quantum wells, thus 'undoing' the effects of strain. To prove the concept we have used strained InGaAs-InAlAs quantum wells in which the light-hole state is the ground state in the valence band. Photocurrent measurements under various fields have shown a change in the valence-band states that contribute to the fundamental (lowest-energy) transition, from light-hole states to heavy-hole states. This result opens the door to reversing the polarization of light emission in quantum wells, from TM to TE, which could find application in optical modulators. (3) We have shown the presence of low-temperature exciton-photon coupling in microcavities using PL spectroscopy. Because of thermalization until now it has been almost impossible to use PL to study at low temperature (T = 20K or less) the coupling of excitons and photons. We have determined the difference between the lowest-energy PL peak from a quantum well-microcavity system and that of an isolated quantum well, at various temperatures. This difference is constant with T when a field is applied but is T dependent when the field is suppressed. The maximum variation is a direct measure of the exciton-photon coupling.

Author: Hui C. Liu
Publisher: Springer Science & Business Media
ISBN: 9401111448
Category : Technology & Engineering
Languages : en
Pages : 573

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Book Description
Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Author: P. K. Bhattacharya
Publisher: IET
ISBN: 9780852968819
Category : Electronic books
Languages : en
Pages : 238

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Book Description
A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.

Author: Shekhar Priyadarshi
Publisher: Cuvillier Verlag
ISBN: 3736939116
Category : Science
Languages : en
Pages : 112

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Book Description
In the last few decades the study of ultrafast phenomena in GaAs gained worldwide attention showing potential for novel developments of ultrafast devices and techniques in metrology and communications. In this thesis ultrafast all-optically induced photocurrents, namely shift and injection currents, are excited in (110)-oriented GaAs quantum wells by 130 fs optical pulses, which result in simultaneously emitted terahertz radiation. The terahertz radiation being a signature of the all-optically induced currents is measured using electro-optic sampling. The measurements provide a deep insight about influence of exciton transitions, valence bandmixing, and quantum interference of the heavy-hole and light-hole wavefunctions on the all-optically induced photocurrents.

Author: Samuel G. Carter
Publisher:
ISBN: 9780496923588
Category :
Languages : en
Pages : 488

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Book Description
Finally, sideband generation in doped GaAs QWs was observed for the first time and was quite different from that in undoped QWs. The mixing in doped QWs was primarily sensitive to electronic intersubband transitions while that in undoped QWs was due to excitonic intersubband transitions. These results demonstrate that THz-optical mixing can be used as a tool for probing intersubband dynamics.