Author: Richard Dana Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 123
Book Description
Part I: With the advent of ion implantation, it has become possible to introduce many new dopant species into silicon. The electrical behavior of implanted species displaying deep energy levels was investigated. Part II: Ion implantation was investigated as a doping process for the fabrication of submicron n-type layers in GaAs.
Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide
Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide
Author: Richard D. Pashley
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 114
Book Description
Publisher:
ISBN:
Category : Doped semiconductors
Languages : en
Pages : 114
Book Description
A Comparison of Epitaxial Layers and Undoped Semi-insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide
Author: Alison Schary
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 654
Book Description
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 654
Book Description
Investigation of the Electrical Properties of Ion-implanted Gallium Arsenide as a Function of Temperature
Author: Md. Shah Alam
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 130
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 130
Book Description
Ion Implantation in Semiconductors
Author: Susumu Namba
Publisher: Springer Science & Business Media
ISBN: 1468421514
Category : Science
Languages : en
Pages : 716
Book Description
The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Publisher: Springer Science & Business Media
ISBN: 1468421514
Category : Science
Languages : en
Pages : 716
Book Description
The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
A Study of Temperature Dependent Electrical Properties of Ion-implanted Gallium Arsenide
Author: Shanmugam Sundaram
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 182
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 182
Book Description
Ion Implantation
Author: R. Morgan
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 114
Book Description
Publisher:
ISBN:
Category : Ion bombardment
Languages : en
Pages : 114
Book Description
An Investigation of Temperature Dependence of Electrical Properties in Ion-implanted Gallium Arsenide
Author: A. K. M. Matior Rahman
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 152
Book Description
Publisher:
ISBN:
Category : Gallium arsenide semiconductors
Languages : en
Pages : 152
Book Description
Electrical properties of implanted layers in gallium arsenide
Author: John Ernest Tansey
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Properties of Ion Implanted Silicon, Sulfur, and Carbon in Gallium Arsenide
Author: James Douglas Sansbury
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 210
Book Description