Electrical and Thermal Characterization of MESFETs, HEMTs, and HBTs PDF Download
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Author: Robert Anholt
Publisher: Artech House Microwave Library
ISBN:
Category : Science
Languages : en
Pages : 338
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Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Author: Robert Anholt
Publisher: Artech House Microwave Library
ISBN:
Category : Science
Languages : en
Pages : 338
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Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Author: Peter H. Ladbrooke
Publisher: Artech House
ISBN: 1630818690
Category : Technology & Engineering
Languages : en
Pages : 480
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Book Description
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Author: Endalkachew Shewarega Mengistu
Publisher: kassel university press GmbH
ISBN: 3899583817
Category :
Languages : en
Pages : 153
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Book Description
Author: Peter Aaen
Publisher: Cambridge University Press
ISBN: 113946812X
Category : Technology & Engineering
Languages : en
Pages : 375
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Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author: H. Groll
Publisher: Springer Science & Business Media
ISBN: 9401155402
Category : Technology & Engineering
Languages : en
Pages : 462
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Book Description
Microwave Physics and Techniques discusses the modelling and application of nonlinear microwave circuits and the problems of microwave electrodynamics and applications of magnetic and high Tc superconductor structures. Aspects of advanced methods for the structural investigation of materials and of MW remote sensing are also considered. The dual focus on both HTSC MW device physics and MW excitation in ferrites and magnetic films will foster the interaction of specialists in these different fields.
Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
ISBN: 9788173195679
Category : Science
Languages : en
Pages : 1310
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Book Description
Contributed papers of the workshop held at IIT, Madras, in 2003.
Author: Stephen A. Maas
Publisher: Artech House
ISBN: 1580534848
Category : Technology & Engineering
Languages : en
Pages : 603
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Book Description
This newly and thoroughly revised edition of the 1988 Artech House classic offers you a comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a current, in-depth understanding of the theory of nonlinear circuit analysis with a focus on Volterra-series and harmonic-balance methods. You get practical guidance in designing nonlinear circuits and modeling solid-state devices for nonlinear circuit analysis by computer. Moreover, you learn how characteristics of such models affect the analysis of these circuits.
Author: Kompa, Günter
Publisher: kassel university press GmbH
ISBN: 3862195414
Category : Compound semiconductors
Languages : en
Pages : 762
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Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9789810223250
Category : Technology & Engineering
Languages : en
Pages : 388
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Book Description
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Author: Scott A. Wartenberg
Publisher: Artech House
ISBN: 9781580532730
Category : Technology & Engineering
Languages : en
Pages : 256
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Book Description
The recent explosion of the RF wireless integrated circuits (IC), coupled with higher operating speeds in digital IC's has made accurate RF testing of IC's vital. This ground-breaking resource explains the fundamentals of performing accurate RF measurements of die and packages. It offers you practical advice on how to use coplanar probes and test fixtures in the lab for RF on-wafer die and package characterization. It also details how to build separate RF test systems for noise, high-power, and thermal testing as well as de-embed the test system's parasitic effects to get the die's RF performance. This book is a handy, practical resource for RFIC and MMIC designers as well as high-frequency digital IC designers, IC test engineers, and IC manufacturing test engineers.
