Electrical and Optical Characterization of Defects in Strontium Titanate Thin Films Grown by Organometallic Chemical Vapor Deposition PDF Download
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Author: William Allen Feil
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Languages : en
Pages :
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Author: William Allen Feil
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Languages : en
Pages :
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Author:
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Category : Dissertation abstracts
Languages : en
Pages : 724
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![Defects and Magnetic Properties of Iron-implanted Strontium Titanate and Thin Fims[i.e] Films PDF](https://books.google.com/books/content/images/frontcover/ZD9uwAEACAAJ?fife=w80-h100)
Author: Misha Chavarha
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Category :
Languages : en
Pages : 194
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Physical vapor deposition was used to grow good quality crystalline stoichiometric SrTiO3 thin films on Si(001) substrates using a systematic approach starting from an understanding of the kinetics and thermodynamics of the system and finishing with the development of a procedure for preparing high quality SrTiO3/Si interface. Growth of optimized SrTiO3 perovskite structures on Si requires careful transformation of a thin interfacial SrSix layer into the initial SrTiO3 lattice cells. The critical aspects of the growth, such as low temperature and low oxidant partial pressure, are identified. Crystallinity and stoichiometry of SrTiO3 were verified using powder x-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). The SrTiO3/Si(001) interface was examined with X-ray photoemission spectroscopy (XPS) and RBS. The optimum composition can be represented with low concentration (thickness) of strontium silicate phases at the interface (SrxSiyOy) as well as a strong signal from strontium titanate peaks. Thicker samples were grown with the procedure developed and were implanted with iron at 2 ́1016 ions/cm2 for future magnetic characterization. In parallel to the thin film growth, (001) SrTiO3 single crystals were implanted with iron at doses ranging from 2 ́1014 to 2 ́1016 ions/cm2 and magnetic measurements were carried out with a superconducting quantum interference device (SQUID). The results show negative susceptibility, predominately diamagnetic behavior which is characteristic of SrTiO3 and small paramagnetic response at low magnetic fields, indicating the possible presence of oxygen/titanium vacancies. The temperature dependence of magnetization measurements did not reveal phase changes. We note that it was difficult to identify any trends between implanted samples most likely due to oxygen contamination of the measurement system. Future experiments are proposed to develop a quantitative and consistent agreement between Fe phases in SrTiO3, SrTiO3 defect concentrations and magnetic responses.
Author:
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Category : Chemical abstracts
Languages : en
Pages : 2682
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Author: Anuranjan Srivastava
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Category :
Languages : en
Pages : 132
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Author: Polly Wanda Chu
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Category :
Languages : en
Pages : 434
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Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Author:
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Category : Dissertations, Academic
Languages : en
Pages : 786
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Author: Materials Research Society. Meeting
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Category : Materials science
Languages : en
Pages : 504
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Author: David Christopher Gilmer
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Category :
Languages : en
Pages : 314
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Author:
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ISBN:
Category : Aeronautics
Languages : en
Pages : 956
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