D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991 PDF Download
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Author: W. Jantsch
Publisher: CRC Press
ISBN: 1000157040
Category : Science
Languages : en
Pages : 167
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Book Description
Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Author: W. Jantsch
Publisher: CRC Press
ISBN: 1000157040
Category : Science
Languages : en
Pages : 167
Get Book Here
Book Description
Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Author: David J Lockwood
Publisher: World Scientific
ISBN: 9814550159
Category :
Languages : en
Pages : 2858
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Book Description
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author: W. Jantsch
Publisher: CRC Press
ISBN: 1000112233
Category : Science
Languages : en
Pages : 164
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Book Description
Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.
Author: International Symposium on DX Centres and Other Metastable Defects in Semiconductors. 1991, Mauterndorf
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 155
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Book Description
Author: M. O. Manasreh
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 552
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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: K.J. Bachmann
Publisher: Elsevier
ISBN: 0444600272
Category : Technology & Engineering
Languages : en
Pages : 337
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Book Description
Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development.
Author: Richard Anthony Stradling
Publisher:
ISBN:
Category : DX centers (Solid state physics)
Languages : en
Pages : 163
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Book Description
Author: C A J Ammerlaan
Publisher: World Scientific
ISBN: 9814546674
Category :
Languages : en
Pages : 554
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Book Description
This book is devoted to the specific physical and chemical properties of centers in semiconductors with shallow energy levels and electronic distributions of an extended size. Reports are included on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centers in host semiconductors of lower dimensionality, centers in wide-bandgap semiconductors, shallow excited states of centers with deep ground states, passivation of centers, and other aspects of impurity control during crystal growth and processing with its relevance to applications.
Author:
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 712
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Book Description
Author: K. Sumino
Publisher: Elsevier
ISBN: 0444600647
Category : Technology & Engineering
Languages : en
Pages : 817
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Book Description
Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
