Doping of Epitaxial III-V Semiconductors for Optoelectronic and Magnetoelectronic Applications PDF Download
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Author: Mark E. Overberg
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Author: Mark E. Overberg
Publisher:
ISBN:
Category :
Languages : en
Pages : 398
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Author: E. Fred Schubert
Publisher: E. Fred Schubert
ISBN: 0986382639
Category : Science
Languages : en
Pages : 624
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Book Description
This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.
Author: E. F. Schubert
Publisher: Cambridge University Press
ISBN: 9780521419192
Category : Science
Languages : en
Pages : 632
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Book Description
Doping of III-V semiconductor compounds is the basis of virtually all semiconductor heterostructures and all optoelectronic devices. This is the first book to provide a comprehensive and thorough treatment of the subject, examining both theoretical and experimental aspects, and including important material on delta-doping. The author is involved in research at one of the world's foremost microelectronics laboratories, and while assessing the current state of the art, he also provides valuable introductory material for those beginning studies or research in this field.
Author: V. G. Keramidas
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 314
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Author: Jose Antonio Aguilar Amoros
Publisher:
ISBN:
Category :
Languages : en
Pages : 116
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Author: M. G. Astles
Publisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 240
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Book Description
An introduction to the basic principles of the technique of liquid-phase epitaxy (LPE) as applied to the growth of the III-V family of compounds.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 21
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Book Description
The overall goal of this Phase I project was to focus on developing procedures for the fabrication and evaluation of epitaxial layers of GaAs which are doped with rare earth (RE) ions of Erbium. The essential elements of the originally proposed approach have been demonstrated through the efforts on this Phase I project. Erbium was successfully incorporated in epitaxially grown Gallium Arsenide (GaAs) and Aluminum-Gallium Arsenide (AlGaAs) by using the Metal Organic Chemical Vapor Deposition (MOCVD) method and using Tris(n- butylcyclopentadienyl)erbium [Er(C4H9C5H4)3] as Er source material. Concentrations of Erbium as high as 10 to the 19 power /cu cm 3 were detected by Secondary Ion Mass Spectroscopy (SIMS). A substantial, though unknown, amount of the Erbium was incorporated in the form of trivalent ions; this was evident by the observation of the characteristic Er(3+) light emission from photoluminescence spectra of our samples.
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 776
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Author: Guodong Zhang
Publisher:
ISBN: 9789517220224
Category : Molecular crystals
Languages : en
Pages : 111
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Author:
Publisher:
ISBN:
Category :
Languages : pt-BR
Pages :
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Book Description
A integração monolítica de um modulador com um guia de onda é de muito interesse para aplicação em comunicações ópticas pelo fato de que podemos diminuir as perdas por acoplamento óptico entre os dois dispositivos e usar moduladores curtos que operem em altas taxas de transmissão de dados. O crescimento epitaxial seletivo é uma das técnicas mais promissoras na atualidade para aplicação na integração monolítica de dispositivos semicondutores. Esta técnica permite controlar a espessura e a tensão das camadas crescidas seletivamente permitindo otimizar a integração e as características das estruturas dos dispositivos. A tese trata da implementação, do estudo e da aplicação do crescimento epitaxial seletivo por MOCVD de estruturas casadas e tensionadas de poços quânticos múltiplos de InGaAs/InAlAs para a fabricação de moduladores de amplitude baseados no efeito Stark e sua integração com guias de onda. O desempenho dos moduladores, baseados em estruturas de poços quânticos múltiplos de InGaAs/InAlAs que operam em 1,55 ym, é notavelmente melhorado quando é introduzida uma composição de 52% de Ga na liga e se tem um poço de ~100 A de espessura. Nesse caso, os moduladores possuem uma elevada figura de mérito e podem ser insensíveis à polarização. Nesse estudo foram crescidas várias amostras onde foi analisado o aumento na taxa de crescimento e a variação na composição das ligas de InGaAs e InAlAs em material bulk e em poços quânticos de InGaAs/InAlAs em função da geometria da máscara utilizada, i.e. diferentes larguras do dielétrico e largura da janela onde ocorre o crescimento fixo. Finalmente foram processados guias de onda cujas estruturas foram crescidas com a técnica de crescimento seletivo. Esses guias foram caracterizados por técnicas de campo próximo.
