Author: Zia Karim
Publisher: The Electrochemical Society
ISBN: 1566778646
Category : Science
Languages : en
Pages : 546
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Book Description
This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.
Author: C. Claeys
Publisher: The Electrochemical Society
ISBN: 1607682613
Category :
Languages : en
Pages : 429
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Book Description
Author: Geert Hellings
Publisher: Springer Science & Business Media
ISBN: 9400763409
Category : Technology & Engineering
Languages : en
Pages : 154
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Book Description
For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.
Author: P. Srinivasan
Publisher: The Electrochemical Society
ISBN: 156677795X
Category : Science
Languages : en
Pages : 259
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Book Description
This issue of ECS Transactions addresses the fundamental material science, characterization, modeling and applications of Graphene, Ge-III-V and Emerging materials designed for alternatives technologies to replace CMOS.
Author: Electrochemical Society
Publisher: ECS Transactions
ISBN: 9781566779562
Category :
Languages : en
Pages : 242
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Book Description
This issue of ECS Transactions covers emerging electronic materials and concepts, including but not limited to, beyond CMOS integration schemes/technology development and on the impact of nontraditional materials such as optical, laser, RF, and other non-conventional devices in nanoelectronics. Topics include grapheme material properties, preparation, synthesis, and growth; Ge and SiGe devices for PMOS mobility enhancement for next generation CMOS and other devices beyond strain engineering, III-V heterostructures on Si substrates.
Author: Taylor & Francis Group
Publisher: CRC Press
ISBN: 9780367454449
Category :
Languages : en
Pages : 614
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Book Description
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be required, making this is a subject of intensive research activity within the microelectronics community. High k Gate Dielectrics reviews the state-of-the-art in high permittivity gate dielectric research. Consisting of contributions from leading researchers from Europe and the USA, the book first describes the various deposition techniques used for construction of layers at these dimensions. It then considers characterization techniques of the physical, chemical, structural, and electronic properties of these materials. The book also reviews the theoretical work done in the field and concludes with technological applications.
Author: Guozhen Shen
Publisher: Springer
ISBN: 9811323674
Category : Technology & Engineering
Languages : en
Pages : 396
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Book Description
This book gives a comprehensive overview of recent advances in developing nanowires for building various kinds of electronic devices. Specifically the applications of nanowires in detectors, sensors, circuits, energy storage and conversion, etc., are reviewed in detail by the experts in this field. Growth methods of different kinds of nanowires are also covered when discussing the electronic applications. Through discussing these cutting edge researches, the future directions of nanowire electronics are identified.
Author: Dae Mann Kim
Publisher: Springer Science & Business Media
ISBN: 1461481244
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Author: Zhong Lin Wang
Publisher: Springer Science & Business Media
ISBN: 364234237X
Category : Technology & Engineering
Languages : en
Pages : 254
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Book Description
The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in 2007 and 2010, respectively. Due to the polarization of ions in a crystal that has non-central symmetry in materials, such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. Owing to the simultaneous possession of piezoelectricity and semiconductor properties, the piezopotential created in the crystal has a strong effect on the carrier transport at the interface/junction. Piezotronics is for devices fabricated using the piezopotential as a “gate” voltage to control charge carrier transport at a contact or junction. The piezo-phototronic effect uses the piezopotential to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detector, solar cell and LED. The functionality offered by piezotroics and piezo-phototronics are complimentary to CMOS technology. There is an effective integration of piezotronic and piezo-phototronic devices with silicon based CMOS technology. Unique applications can be found in areas such as human-computer interfacing, sensing and actuating in nanorobotics, smart and personalized electronic signatures, smart MEMS/NEMS, nanorobotics and energy sciences. This book introduces the fundamentals of piezotronics and piezo-phototronics and advanced applications. It gives guidance to researchers, engineers and graduate students.
Author: Zhong Lin Wang
Publisher: Springer
ISBN: 3319400398
Category : Technology & Engineering
Languages : en
Pages : 537
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Book Description
This book introduces an innovative and high-efficiency technology for mechanical energy harvesting. The book covers the history and development of triboelectric nanogenerators, basic structures, working principles, performance characterization, and potential applications. It is divided into three parts: Part A illustrates the fundamental working modes of triboelectric nanogenerators with their prototype structures and theoretical analysis; Part B and Part C introduce two categories of applications, namely self-powered systems and self-powered active sensors. The book will be an ideal guide to scientists and engineers beginning to study triboelectric nanogenerators or wishing to deepen their knowledge of the field. Readers will be able to place the technical details about this technology in context, and acquire the necessary skills to reproduce the experimental setups for fabrication and measurement.
