Development, Manufacturing and Characterization of Stacked MESA Photodiodes PDF Download
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Author: Fabian Florek
Publisher: Cuvillier Verlag
ISBN: 3736983514
Category : Technology & Engineering
Languages : en
Pages : 155
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Book Description
Diese Arbeit untersucht das Konzept von gestapelten Fotodioden basierend auf einem MESA Prozess. Eine Fotodiode mit einer vertikalen MESA Struktur ist eine neue Herangehensweise für die Detektion von farbigem Licht. Die Ergebnisse dieser Arbeit zeigen, dass ein Sensor zur Farbdetektion, basierend auf einer MESA Struktur, möglich ist. Durch chemische Gasphasenabscheidungen wird ein n-i-p-n-i-p Stapel gewachsen, der sehr dünne p-n Übergänge besitzt. Danach werden die unterschiedlichen p-i-n Dioden mit Hilfe eines neu entwickelten Ätzprozesses separat kontaktiert. Eine freistehende MESA Struktur wird dadurch erzeugt, dass alle überflüssigen Teile der Struktur durch einen hochselektiven RIE Ätzprozess entfernt werden. Diese neu geschaffene Struktur wird dann mit einer Passivierung und Metallkontakten versehen. Dadurch ist es möglich, sehr dünne und separat kontaktierte p-n Übergänge zu schaffen. Die hergestellten Prototypen wurden einzeln und gleichzeitig spektral vermessen um eine spektrale Antwort der Dioden zu erhalten. Diese spektrale Antwort wurde durch Simulationen sowie theoretische Berechnungen bestätigt.
Author: Fabian Florek
Publisher: Cuvillier Verlag
ISBN: 3736983514
Category : Technology & Engineering
Languages : en
Pages : 155
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Book Description
Diese Arbeit untersucht das Konzept von gestapelten Fotodioden basierend auf einem MESA Prozess. Eine Fotodiode mit einer vertikalen MESA Struktur ist eine neue Herangehensweise für die Detektion von farbigem Licht. Die Ergebnisse dieser Arbeit zeigen, dass ein Sensor zur Farbdetektion, basierend auf einer MESA Struktur, möglich ist. Durch chemische Gasphasenabscheidungen wird ein n-i-p-n-i-p Stapel gewachsen, der sehr dünne p-n Übergänge besitzt. Danach werden die unterschiedlichen p-i-n Dioden mit Hilfe eines neu entwickelten Ätzprozesses separat kontaktiert. Eine freistehende MESA Struktur wird dadurch erzeugt, dass alle überflüssigen Teile der Struktur durch einen hochselektiven RIE Ätzprozess entfernt werden. Diese neu geschaffene Struktur wird dann mit einer Passivierung und Metallkontakten versehen. Dadurch ist es möglich, sehr dünne und separat kontaktierte p-n Übergänge zu schaffen. Die hergestellten Prototypen wurden einzeln und gleichzeitig spektral vermessen um eine spektrale Antwort der Dioden zu erhalten. Diese spektrale Antwort wurde durch Simulationen sowie theoretische Berechnungen bestätigt.
Author: Fabian Florek
Publisher:
ISBN: 9783736993518
Category :
Languages : en
Pages : 139
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Book Description
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
ISBN: 0471739065
Category : Technology & Engineering
Languages : en
Pages : 800
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Book Description
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author: Perrin Walker
Publisher: CRC Press
ISBN: 9781439822531
Category : Science
Languages : en
Pages : 1434
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Book Description
This publication presents cleaning and etching solutions, their applications, and results on inorganic materials. It is a comprehensive collection of etching and cleaning solutions in a single source. Chemical formulas are presented in one of three standard formats - general, electrolytic or ionized gas formats - to insure inclusion of all necessary operational data as shown in references that accompany each numbered formula. The book describes other applications of specific solutions, including their use on other metals or metallic compounds. Physical properties, association of natural and man-made minerals, and materials are shown in relationship to crystal structure, special processing techniques and solid state devices and assemblies fabricated. This publication also presents a number of organic materials which are widely used in handling and general processing...waxes, plastics, and lacquers for example. It is useful to individuals involved in study, development, and processing of metals and metallic compounds. It is invaluable for readers from the college level to industrial R & D and full-scale device fabrication, testing and sales. Scientific disciplines, work areas and individuals with great interest include: chemistry, physics, metallurgy, geology, solid state, ceramic and glass, research libraries, individuals dealing with chemical processing of inorganic materials, societies and schools.
Author: Jeong Woo Park
Publisher: BoD – Books on Demand
ISBN: 9533075309
Category : Technology & Engineering
Languages : en
Pages : 460
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Book Description
Photodiodes or photodetectors are in one boat with our human race. Efforts of people in related fields are contained in this book. This book would be valuable to those who want to obtain knowledge and inspiration in the related area.
Author: Achyut K. Dutta
Publisher: Academic Press
ISBN: 0080543766
Category : Science
Languages : en
Pages : 551
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Book Description
The communications industry is at the onset of new expansion of WDM technology necessary to meet the new demand for bandwidth. This is the second of a four reference books that will cover this technology comprehensively with all of the major topics covered by a separate volumes - i.e. active components, passive components, systems and networks. This book is the first which covers all key passive optical components required for current and next generation optical communication systems. World-renowned authors, who are pioneers in their research area, have written the chapters in their area of expertise. The book highlights not only the principle of operation and characteristics of the passive optical components, but also provides an in-depth account of the state-of-the-art system applications.- Helps the reader to choose the right device for a given system application.- Provides the reader with insight and understanding for key passive optical components frequently being / to be used in the optical communication systems, essential building blocks of today's/next generation fiber optic networks.- Allows engineers working in different optical communication areas(i.e. from system to component), to understand the principle and mechanics of each key component they deal with for optical system design.- Covers Planar lightwave circuit (PLC) based router, different optical switches technologies (based on MEMS, thermo-optic, and electro-optic) and different optical amplifier technologies (based on semiconductor optical amplifier, EDFA ,and raman amplifier). - Highlights the operating principle of each component, system applications, and also future opportunities.
Author:
Publisher:
ISBN:
Category : Lasers in astronautics
Languages : en
Pages : 438
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Book Description
Author: Antonio Rogalski
Publisher: CRC Press
ISBN: 1420076728
Category : Science
Languages : en
Pages : 900
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Book Description
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1860
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Book Description
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
