Design, Characterization, and Profile Optimization of Silicon-germanium Complementary Metal-oxide-semiconductor Field Effect Transistors on Silicon-on-sapphire (SOS) PDF Download
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Author: Suraj J. Mathew
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 258
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Book Description
Author: Suraj J. Mathew
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 258
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Book Description
Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 852
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Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 848
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Author: Peter John Bjeletich
Publisher:
ISBN:
Category :
Languages : en
Pages : 480
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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It has been shown that recessed SiGe source/drain technology enhances the performance of metal oxide semiconductor field effect transistors (MOSFETs), by providing enhanced channel mobility and reduced source/drain contact resistivity. The focus of this dissertation is to study the effect of the recessed SiGe junction parameters on the biaxial compressive strain in SiGe, and its impact on the bandgap and contact resistivity. Due to its smaller size, boron can partially compensate the compressive strain in SiGe. This behavior was modeled using the covalent radii of Si, Ge and B, to calculate the lattice parameter of the ternary SiGeB alloy. It was also shown using micro-Raman spectroscopy that Houghton's kinetic model accurately predicted the SiGeB critical thickness. Formation of NiSiGe on SiGe was also studied, and it was found that NiSiGe induced tensile strain in SiGe, thereby reducing the compressive strain in the junctions. The impact of the NiSiGe thickness on SiGe bandgap was also studied using p(SiGe)-n(Si) diodes, and it was shown that increasing the NiSiGe thickness led to an increase in the bandgap, due to loss in compressive strain. It was also shown that the barrier height followed the SiGe bandgap, and hence increased with NiSiGe thickness. The impact of the SiGe bandgap and the barrier height on contact resistivity was studied using four-terminal Kelvin structures. It was shown that contact resistivity increased with SiGe thickness and NiSiGe thickness, due to reduced biaxial compressive strain. It was shown that with fully strained SiGe junctions, and a germanium concentration of x=0.28, a minimum contact resistivity of 2.5 X 10−8 Ohm-cm2 could be obtained. While the experiments in this dissertation are limited to SiGe and NiSiGe contacts, the fundamental knowledge gained from this work is expected to have a much wider impact. Specifically, this thesis introduces strain as a new parameter in contact engineering because of its.
Author:
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ISBN:
Category :
Languages : en
Pages :
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This research focuses on the design, characterization, modeling and analysis of high voltage Silicon Carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFET), insulated gate bipolar transistors (IGBT) and emitter turn-off thyristors (ETO) to satisfy the stringent requirements of advanced power electronic systems. The loss information, frequency capability and switching ruggedness of these 10-kV SiC power devices are studied extensively in order to provide their application prospects in solid-state transformers (SST). Among 10-kV SiC power devices, SiC MOSFETs are of the greatest interest due to their lower specific on-resistance compared to silicon MOSFETs, and their inherently fast switching speed due to their majority carrier conduction mechanism. Therefore, 10-kV SiC MOSFETs are studied first in this dissertation. The characterization, modeling and analysis of 10-kV SiC MOSFETs were investigated extensively. The low losses and high switching frequency of 10-kV SiC MOSFETs were demonstrated in characterization study and a 4-kV 4 kW boost converter. The on-resistance of SiC MOSFETs increases rapidly with increased junction temperature and blocking voltage. This makes their conduction losses possibly unacceptable for applications where high DC supply voltages (more than 10-kV) and high temperature operation are used. This warrants the development of SiC bipolar devices (IGBTs and thyristors) to achieve smaller conduction losses due to the conductivity modulation of their thick drift layers, especially at elevated temperatures. Therefore, design, characterization and optimization of 10-kV SiC IGBT and ETO were dicussed. A 4H-SiC p-channel IGBT with improved conduction characteristics was developed and characterized experimentally as well as analyzed theoretically by numerical simulations. The device exhibited a differential on-resistance of 26 mOhm.cm^2 at a collector current density of 100 A/cm^2 at room temperature. An the SiC IGBT showed a turn-of.
Author: Matthias Kummer
Publisher:
ISBN: 9783832200244
Category : Germanium
Languages : en
Pages : 111
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Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 9781402077739
Category : Science
Languages : en
Pages : 392
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Book Description
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Author: Dylan Buxton Thomas
Publisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages :
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Book Description
Using bandgap engineering, silicon-germanium (SiGe) BiCMOS technology effectively combines III-V transistor performance with the cost and integration advantages associated with CMOS manufacturing. The suitability of SiGe technology for cryogenic and radiation-intense environments is well known, yet SiGe has been generally overlooked for applications involving extreme high temperature operation. This work is an investigation into the potential capabilities of SiGe technology for operation up to 300°C, including the development of packaging and testing procedures to enable the necessary measurements. At the device level, SiGe heterojunction bipolar transistors (HBTs), field-effect transistors (FETs), and resistors are verified to maintain acceptable functionality across the temperature range, laying the foundation for high temperature circuit design. This work also includes the characterization of existing bandgap references circuits, redesign for high temperature operation, validation, and further optimization recommendations. In addition, the performance of temperature sensor, operational amplifier, and output buffer circuits under extreme high temperature conditions is presented. To the author's knowledge, this work represents the first demonstration of functional circuits from a SiGe technology platform in ambient temperatures up to 300°C; furthermore, the optimized bandgap reference presented in this work is believed to show the best performance recorded across a 500°C range in a bulk-silicon technology platform.
Author: Sorin Cristoloveanu
Publisher: Springer Science & Business Media
ISBN: 1461522455
Category : Technology & Engineering
Languages : en
Pages : 389
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Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
