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Author: Shulu Chen
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 186
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Book Description
Since the invention of the integrated circuit (IC) in the late 1950s, the semiconductor industry has experienced dramatic growth driven by both technology and manufacturing improvements. Over the past 40 years, the industry's growth trend has been predicted by Moore's law, and driven by the constant electrical field scaling design methodology. While the intrinsic performance of each device improves over generations, the corresponding interconnects do not. To alleviate this interconnect issue, a three-dimensional (3D) integration concept of transforming longer side to side interconnects into shorter vertical vias by using multiple active layers has attracted much attention. The focus of this thesis is on providing the foundation for 3D heterogeneous integration by investigating methods of growing single crystal materials on the silicon platform and the subsequent low-temperature process flow, through experimental demonstration, theoretical modeling and device structure simplification. First, thin film single crystal GaAs and GaSb were grown on dielectric layers on bulk silicon substrates by the rapid melt growth (RMG) method, using both rapid thermal annealing (RTA) and laser annealing. The relationship between stoichiometry and the crystal structure is discussed according to the theoretical phase diagram and the experimental results. A modified RMG structure is also proposed and demonstrated to solve the potential issue involved in integrating the RMG method into a three-dimensional integrated circuits (3D-IC) process with thick isolation layers. In order to estimate the outcome of the crystallization and to provide further understanding of the physics behind this RMG process, compact models are derived based on classical crystallization theory. Mathematical models including the geometry, the thermal environment and the outcome of the crystallization are built. The initial cooling rate is identified as the key factor for the RMG process. With the ability of integrating multiple materials on silicon substrates, the subsequent process flows using low-temperature-fabrication or simplified device structures are proposed and evaluated to achieve high density 3D integration. A "bonding substrate/monolithic contact" approach is proposed to relieve the thermal constraint from getting the starting single crystal layer without sacrificing the interconnect performance. A low-temperature process using germanium as the channel material is also discussed. Finally, gated thin film resistor structures are designed and compared to the conventional MOSFET structure with a focus on their relative performance and process complexity trade-off for future 3D-IC implementation.
Author: Shulu Chen
Publisher: Stanford University
ISBN:
Category :
Languages : en
Pages : 186
Get Book Here
Book Description
Since the invention of the integrated circuit (IC) in the late 1950s, the semiconductor industry has experienced dramatic growth driven by both technology and manufacturing improvements. Over the past 40 years, the industry's growth trend has been predicted by Moore's law, and driven by the constant electrical field scaling design methodology. While the intrinsic performance of each device improves over generations, the corresponding interconnects do not. To alleviate this interconnect issue, a three-dimensional (3D) integration concept of transforming longer side to side interconnects into shorter vertical vias by using multiple active layers has attracted much attention. The focus of this thesis is on providing the foundation for 3D heterogeneous integration by investigating methods of growing single crystal materials on the silicon platform and the subsequent low-temperature process flow, through experimental demonstration, theoretical modeling and device structure simplification. First, thin film single crystal GaAs and GaSb were grown on dielectric layers on bulk silicon substrates by the rapid melt growth (RMG) method, using both rapid thermal annealing (RTA) and laser annealing. The relationship between stoichiometry and the crystal structure is discussed according to the theoretical phase diagram and the experimental results. A modified RMG structure is also proposed and demonstrated to solve the potential issue involved in integrating the RMG method into a three-dimensional integrated circuits (3D-IC) process with thick isolation layers. In order to estimate the outcome of the crystallization and to provide further understanding of the physics behind this RMG process, compact models are derived based on classical crystallization theory. Mathematical models including the geometry, the thermal environment and the outcome of the crystallization are built. The initial cooling rate is identified as the key factor for the RMG process. With the ability of integrating multiple materials on silicon substrates, the subsequent process flows using low-temperature-fabrication or simplified device structures are proposed and evaluated to achieve high density 3D integration. A "bonding substrate/monolithic contact" approach is proposed to relieve the thermal constraint from getting the starting single crystal layer without sacrificing the interconnect performance. A low-temperature process using germanium as the channel material is also discussed. Finally, gated thin film resistor structures are designed and compared to the conventional MOSFET structure with a focus on their relative performance and process complexity trade-off for future 3D-IC implementation.
Author: Antonis Papanikolaou
Publisher: Springer Science & Business Media
ISBN: 1441909621
Category : Architecture
Languages : en
Pages : 251
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Book Description
Three-dimensional (3D) integrated circuit (IC) stacking is the next big step in electronic system integration. It enables packing more functionality, as well as integration of heterogeneous materials, devices, and signals, in the same space (volume). This results in consumer electronics (e.g., mobile, handheld devices) which can run more powerful applications, such as full-length movies and 3D games, with longer battery life. This technology is so promising that it is expected to be a mainstream technology a few years from now, less than 10-15 years from its original conception. To achieve this type of end product, changes in the entire manufacturing and design process of electronic systems are taking place. This book provides readers with an accessible tutorial on a broad range of topics essential to the non-expert in 3D System Integration. It is an invaluable resource for anybody in need of an overview of the 3D manufacturing and design chain.
Author: Beth Keser
Publisher: John Wiley & Sons
ISBN: 1119793777
Category : Technology & Engineering
Languages : en
Pages : 324
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Book Description
Discover an up-to-date exploration of Embedded and Fan-Out Waver and Panel Level technologies In Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces: High Performance Compute and System-in-Package, a team of accomplished semiconductor experts delivers an in-depth treatment of various fan-out and embedded die approaches. The book begins with a market analysis of the latest technology trends in Fan-Out and Wafer Level Packaging before moving on to a cost analysis of these solutions. The contributors discuss the new package types for advanced application spaces being created by companies like TSMC, Deca Technologies, and ASE Group. Finally, emerging technologies from academia are explored. Embedded and Fan-Out Wafer and Panel Level Packaging Technologies for Advanced Application Spaces is an indispensable resource for microelectronic package engineers, managers, and decision makers working with OEMs and IDMs. It is also a must-read for professors and graduate students working in microelectronics packaging research.
Author: Shenglin Ma
Publisher: Elsevier
ISBN: 0323996035
Category : Technology & Engineering
Languages : en
Pages : 294
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Book Description
TSV 3D RF Integration: High Resistivity Si Interposer Technology systematically introduces the design, process development and application verification of high-resistivity silicon interpose technology, addressing issues of high frequency loss and high integration level. The book includes a detailed demonstration of the design and process development of Hr-Si interposer technology, gives case studies, and presents a systematic literature review. Users will find this to be a resource with detailed demonstrations of the design and process development of HR-Si interposer technologies, including quality monitoring and methods to extract S parameters. A series of cases are presented, including an example of an integrated inductor, a microstrip inter-digital filter, and a stacked patch antenna. Each chapter includes a systematic and comparative review of the research literature, offering researchers and engineers in microelectronics a uniquely useful handbook to help solve problems in 3D heterogenous RF integration oriented Hr-Si interposer technology. - Provides a detailed demonstration of the design and process development of HR-Si (High-Resistivity Silicon) interposer technology - Presents a series of implementation case studies that detail modeling and simulation, integration, qualification and testing methods - Offers a systematic and comparative literature review of HR-Si interposer technology by topic - Offers solutions to problems with TSV (through silicon via) interposer technology, including high frequency loss and cooling problems - Gives a systematic and accessible accounting on this leading technology
Author: John H. Lau
Publisher: Springer
ISBN: 9811372241
Category : Technology & Engineering
Languages : en
Pages : 381
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Book Description
Heterogeneous integration uses packaging technology to integrate dissimilar chips, LED, MEMS, VCSEL, etc. from different fabless houses and with different functions and wafer sizes into a single system or subsystem. How are these dissimilar chips and optical components supposed to talk to each other? The answer is redistribution layers (RDLs). This book addresses the fabrication of RDLs for heterogeneous integrations, and especially focuses on RDLs on: A) organic substrates, B) silicon substrates (through-silicon via (TSV)-interposers), C) silicon substrates (bridges), D) fan-out substrates, and E) ASIC, memory, LED, MEMS, and VCSEL systems. The book offers a valuable asset for researchers, engineers, and graduate students in the fields of semiconductor packaging, materials sciences, mechanical engineering, electronic engineering, telecommunications, networking, etc.
Author: Vasilis F. Pavlidis
Publisher: Newnes
ISBN: 0124104843
Category : Technology & Engineering
Languages : en
Pages : 770
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Book Description
Three-Dimensional Integrated Circuit Design, Second Eition, expands the original with more than twice as much new content, adding the latest developments in circuit models, temperature considerations, power management, memory issues, and heterogeneous integration. 3-D IC experts Pavlidis, Savidis, and Friedman cover the full product development cycle throughout the book, emphasizing not only physical design, but also algorithms and system-level considerations to increase speed while conserving energy. A handy, comprehensive reference or a practical design guide, this book provides effective solutions to specific challenging problems concerning the design of three-dimensional integrated circuits. Expanded with new chapters and updates throughout based on the latest research in 3-D integration: - Manufacturing techniques for 3-D ICs with TSVs - Electrical modeling and closed-form expressions of through silicon vias - Substrate noise coupling in heterogeneous 3-D ICs - Design of 3-D ICs with inductive links - Synchronization in 3-D ICs - Variation effects on 3-D ICs - Correlation of WID variations for intra-tier buffers and wires - Offers practical guidance on designing 3-D heterogeneous systems - Provides power delivery of 3-D ICs - Demonstrates the use of 3-D ICs within heterogeneous systems that include a variety of materials, devices, processors, GPU-CPU integration, and more - Provides experimental case studies in power delivery, synchronization, and thermal characterization
Author: Rohit Sharma
Publisher: CRC Press
ISBN: 1351831593
Category : Technology & Engineering
Languages : en
Pages : 328
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Book Description
Three-dimensional (3D) integration of microsystems and subsystems has become essential to the future of semiconductor technology development. 3D integration requires a greater understanding of several interconnected systems stacked over each other. While this vertical growth profoundly increases the system functionality, it also exponentially increases the design complexity. Design of 3D Integrated Circuits and Systems tackles all aspects of 3D integration, including 3D circuit and system design, new processes and simulation techniques, alternative communication schemes for 3D circuits and systems, application of novel materials for 3D systems, and the thermal challenges to restrict power dissipation and improve performance of 3D systems. Containing contributions from experts in industry as well as academia, this authoritative text: Illustrates different 3D integration approaches, such as die-to-die, die-to-wafer, and wafer-to-wafer Discusses the use of interposer technology and the role of Through-Silicon Vias (TSVs) Presents the latest improvements in three major fields of thermal management for multiprocessor systems-on-chip (MPSoCs) Explores ThruChip Interface (TCI), NAND flash memory stacking, and emerging applications Describes large-scale integration testing and state-of-the-art low-power testing solutions Complete with experimental results of chip-level 3D integration schemes tested at IBM and case studies on advanced complementary metal–oxide–semiconductor (CMOS) integration for 3D integrated circuits (ICs), Design of 3D Integrated Circuits and Systems is a practical reference that not only covers a wealth of design issues encountered in 3D integration but also demonstrates their impact on the efficiency of 3D systems.
Author: Kazuo Kondo
Publisher: Springer
ISBN: 3319186752
Category : Science
Languages : en
Pages : 423
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Book Description
This book starts with background concerning three-dimensional integration - including their low energy consumption and high speed image processing - and then proceeds to how to construct them and which materials to use in particular situations. The book covers numerous applications, including next generation smart phones, driving assistance systems, capsule endoscopes, homing missiles, and many others. The book concludes with recent progress and developments in three dimensional packaging, as well as future prospects.
Author: Yuan Xie
Publisher: Springer Science & Business Media
ISBN: 144190784X
Category : Technology & Engineering
Languages : en
Pages : 292
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Book Description
We live in a time of great change. In the electronics world, the last several decades have seen unprecedented growth and advancement, described by Moore’s law. This observation stated that transistor density in integrated circuits doubles every 1. 5–2 years. This came with the simultaneous improvement of individual device perf- mance as well as the reduction of device power such that the total power of the resulting ICs remained under control. No trend remains constant forever, and this is unfortunately the case with Moore’s law. The trouble began a number of years ago when CMOS devices were no longer able to proceed along the classical scaling trends. Key device parameters such as gate oxide thickness were simply no longer able to scale. As a result, device o- state currents began to creep up at an alarming rate. These continuing problems with classical scaling have led to a leveling off of IC clock speeds to the range of several GHz. Of course, chips can be clocked higher but the thermal issues become unmanageable. This has led to the recent trend toward microprocessors with mul- ple cores, each running at a few GHz at the most. The goal is to continue improving performance via parallelism by adding more and more cores instead of increasing speed. The challenge here is to ensure that general purpose codes can be ef?ciently parallelized. There is another potential solution to the problem of how to improve CMOS technology performance: three-dimensional integrated circuits (3D ICs).
Author: Chuan Seng Tan
Publisher: Springer Science & Business Media
ISBN: 0387765344
Category : Technology & Engineering
Languages : en
Pages : 365
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Book Description
This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.
