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Author: Hugues Cazin d'Honincthun
Publisher:
ISBN:
Category :
Languages : fr
Pages : 187
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Book Description
Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de carbone (NTC) se présentent comme une alternative potentielle au Silicium en tant que canal de conduction dans les transistors à effet de champ (CNTFET). Afin de comprendre le fonctionnement du CNTFET, ce travail présente un ensemble de simulations physiques de type Monte-Carlo permettant une description fine du transport de charges. Ce travail est basé sur le simulateur particulaire MONACO qui a été adapté aux propriétés spécifiques des NTC. Il commence par une étude détaillée du transport électronique dans les NTC semi-conducteurs mono-feuillet. L’importance des différents mécanismes d’interaction électron-phonon et leur impact sur les propriétés de transport sont plus particulièrement analysés. Les libres parcours moyens obtenus sont dépendants du champ électrique : suivant les phonons dominants: ils sont supérieurs à 100 nm à faible champ et inférieurs à 20 nm à fort champ. La simulation d’un CNTFET à grille cylindrique et à contacts ohmiques est ensuite proposée en vu de dimensionner le transistor pour des applications numériques et analogiques. L’influence du contrôle électrostatique, du transport balistique et de la capacité quantique sur le fonctionnement et les performances du transistor est analysée et validée par des travaux expérimentaux. Enfin, les performances dynamiques du transistor à nanotube sont évaluées à partir de facteurs de mérite pertinents définis, d’une part, pour des applications numériques et, d’autre part, pour des applications analogiques haute fréquence pour lesquelles des valeurs de fréquence de transition supérieures au THz sont obtenues.
Author: Hugues Cazin d'Honincthun
Publisher:
ISBN:
Category :
Languages : fr
Pages : 187
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Book Description
Pour continuer la course à la miniaturisation des composants microélectronique, les nanotubes de carbone (NTC) se présentent comme une alternative potentielle au Silicium en tant que canal de conduction dans les transistors à effet de champ (CNTFET). Afin de comprendre le fonctionnement du CNTFET, ce travail présente un ensemble de simulations physiques de type Monte-Carlo permettant une description fine du transport de charges. Ce travail est basé sur le simulateur particulaire MONACO qui a été adapté aux propriétés spécifiques des NTC. Il commence par une étude détaillée du transport électronique dans les NTC semi-conducteurs mono-feuillet. L’importance des différents mécanismes d’interaction électron-phonon et leur impact sur les propriétés de transport sont plus particulièrement analysés. Les libres parcours moyens obtenus sont dépendants du champ électrique : suivant les phonons dominants: ils sont supérieurs à 100 nm à faible champ et inférieurs à 20 nm à fort champ. La simulation d’un CNTFET à grille cylindrique et à contacts ohmiques est ensuite proposée en vu de dimensionner le transistor pour des applications numériques et analogiques. L’influence du contrôle électrostatique, du transport balistique et de la capacité quantique sur le fonctionnement et les performances du transistor est analysée et validée par des travaux expérimentaux. Enfin, les performances dynamiques du transistor à nanotube sont évaluées à partir de facteurs de mérite pertinents définis, d’une part, pour des applications numériques et, d’autre part, pour des applications analogiques haute fréquence pour lesquelles des valeurs de fréquence de transition supérieures au THz sont obtenues.
Author: Ashok Srivastava
Publisher: CRC Press
ISBN: 9814613118
Category : Science
Languages : en
Pages : 153
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Book Description
Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be me
Author: Stephanie Reich
Publisher: John Wiley & Sons
ISBN: 3527618058
Category : Technology & Engineering
Languages : en
Pages : 224
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Book Description
Carbon nanotubes are exceptionally interesting from a fundamental research point of view. Many concepts of one-dimensional physics have been verified experimentally such as electron and phonon confinement or the one-dimensional singularities in the density of states; other 1D signatures are still under debate, such as Luttinger-liquid behavior. Carbon nanotubes are chemically stable, mechanically very strong, and conduct electricity. For this reason, they open up new perspectives for various applications, such as nano-transistors in circuits, field-emission displays, artificial muscles, or added reinforcements in alloys. This text is an introduction to the physical concepts needed for investigating carbon nanotubes and other one-dimensional solid-state systems. Written for a wide scientific readership, each chapter consists of an instructive approach to the topic and sustainable ideas for solutions. The former is generally comprehensible for physicists and chemists, while the latter enable the reader to work towards the state of the art in that area. The book gives for the first time a combined theoretical and experimental description of topics like luminescence of carbon nanotubes, Raman scattering, or transport measurements. The theoretical concepts discussed range from the tight-binding approximation, which can be followed by pencil and paper, to first-principles simulations. We emphasize a comprehensive theoretical and experimental understanding of carbon nanotubes including - general concepts for one-dimensional systems - an introduction to the symmetry of nanotubes - textbook models of nanotubes as narrow cylinders - a combination of ab-initio calculations and experiments - luminescence excitation spectroscopy linked to Raman spectroscopy - an introduction to the 1D-transport properties of nanotubes - effects of bundling on the electronic and vibrational properties and - resonance Raman scattering in nanotubes.
Author: Francois Leonard
Publisher: William Andrew
ISBN: 0815519680
Category : Technology & Engineering
Languages : en
Pages : 411
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Book Description
Possibly the most impactful material in the nanotechnology arena, carbon nanotubes have spurred a tremendous amount of scientific research and development. Their superior mechanical and chemical robustness makes them easily manipulable and allows for the assembly of various types of devices, including electronic, electromechanical, opto-electronic and sensing devices.In the field of nanotube devices, however, concepts that describe the properties of conventional devices do not apply. Carbon nanotube devices behave much differently from those using traditional materials, and offer entirely new functionality. This book – designed for researchers, engineers and graduate students alike – bridges the experimental and theoretical aspects of carbon nanotube devices. It emphasizes and explains the underlying physics that govern their working principles, including applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. Many of the aspects discussed here differ significantly from those learned in books or traditional materials, and are essential for the future development of carbon nanotube technology.• Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles • Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing. • Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission. • Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.* Bridges experimental and theoretical aspects of carbon nanotube devices, focusing on the underlying physics that govern their working principles * Explains applications in electronics, nanoelectromechanical systems, field emission, optoelectronics and sensing.* Other topics include: electrical contacts, p-n junctions, transistors, ballistic transport, field emission, oscillators, rotational actuators, electron-phonon scattering, photoconductivity, and light emission* Covers aspects that significantly differ from those learned in traditional materials, yet are essential for future advancement of carbon nanotube technology.
Author: Fouad Sabry
Publisher: One Billion Knowledgeable
ISBN:
Category : Technology & Engineering
Languages : fr
Pages : 541
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Book Description
Qu'est-ce qu'un transistor à effet de champ à nanotube de carbone Un transistor à effet de champ à nanotube de carbone, également connu sous le nom de CNTFET, est une sorte de transistor à effet de champ qui utilise un nanotube de carbone unique ou un réseau de nanotubes de carbone comme matériau de canal à la place du silicium en vrac, comme cela se fait dans la construction MOSFET conventionnelle. Depuis leur première exposition en 1998, la technologie CNTFET a connu des avancées significatives. Comment vous en bénéficierez (I) Insights et validations sur les sujets suivants : Chapitre 1 : Transistor à effet de champ à nanotube de carbone Chapitre 2 : Nanotube de carbone Chapitre 3 : JFET Chapitre 4 : Barrière Schottky Chapitre 5 : Mobilité électronique Chapitre 6 : Systèmes nanoélectromécaniques Chapitre 7 : Tension de seuil Chapitre 8 : Transistor à effet de champ organique Chapitre 9 : Conduction balistique Chapitre 10 : Cellule solaire hybride Chapitre 11 : Applications potentielles des nanotubes de carbone Chapitre 12 : Les nanotubes de carbone dans le photovoltaïque Chapitre 13 : Propriétés optiques des nanotubes de carbone Chapitre 14 : Nanomoteur à nanotubes de carbone Chapitre 15 : NanoIntegris Chapitre 16 : Conduction balistique dans les nanotubes de carbone à simple paroi Chapitre 17 : Transistor à effet de champ tunnel Chapitre 18 : Tran à effet de champ sistor Chapitre 19 : Nanotubes de carbone dans les interconnexions Chapitre 20 : Synthèse de nanotubes de carbone Chapitre 21 : Réseaux de nanotubes de carbone alignés verticalement (II) Répondre aux principales questions du public sur les transistors à effet de champ à nanotubes de carbone. (III) Exemples concrets d'utilisation du transistor à effet de champ à nanotubes de carbone dans de nombreux domaines. ( IV) 17 annexes pour expliquer, brièvement, 266 technologies émergentes dans chaque industrie pour avoir une compréhension complète à 360 degrés des technologies des transistors à effet de champ à nanotubes de carbone. À qui ce livre est destiné Professionnels, étudiants de premier cycle et diplômés, passionnés, amateurs et ceux qui veulent aller au-delà des connaissances ou des informations de base pour tout type de transistor à effet de champ à nanotubes de carbone.
Author: Yung-Fu Chen
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Damien Querlioz
Publisher: John Wiley & Sons
ISBN: 1118618440
Category : Technology & Engineering
Languages : en
Pages : 191
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Book Description
The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.
Author: Jose Mauricio Marulanda
Publisher: BoD – Books on Demand
ISBN: 9533074965
Category : Science
Languages : en
Pages : 574
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Book Description
Carbon nanotubes (CNTs), discovered in 1991, have been a subject of intensive research for a wide range of applications. In the past decades, although carbon nanotubes have undergone massive research, considering the success of silicon, it has, nonetheless, been difficult to appreciate the potential influence of carbon nanotubes in current technology. The main objective of this book is therefore to give a wide variety of possible applications of carbon nanotubes in many industries related to electron device technology. This should allow the user to better appreciate the potential of these innovating nanometer sized materials. Readers of this book should have a good background on electron devices and semiconductor device physics as this book presents excellent results on possible device applications of carbon nanotubes. This book begins with an analysis on fabrication techniques, followed by a study on current models, and it presents a significant amount of work on different devices and applications available to current technology.
Author: Fouad Sabry
Publisher: One Billion Knowledgeable
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 500
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Book Description
What Is Carbon Nanotube Field Effect Transistor A carbon nanotube field-effect transistor, also known as a CNTFET, is a kind of field-effect transistor that makes use of a single carbon nanotube or an array of carbon nanotubes as the channel material in place of bulk silicon, as is done in the conventional MOSFET construction. Since they were first exhibited in 1998, there have been significant advancements in CNTFET technology. How You Will Benefit (I) Insights, and validations about the following topics: Chapter 1: Carbon nanotube field-effect transistor Chapter 2: Carbon nanotube Chapter 3: JFET Chapter 4: Schottky barrier Chapter 5: Electron mobility Chapter 6: Nanoelectromechanical systems Chapter 7: Threshold voltage Chapter 8: Organic field-effect transistor Chapter 9: Ballistic conduction Chapter 10: Hybrid solar cell Chapter 11: Potential applications of carbon nanotubes Chapter 12: Carbon nanotubes in photovoltaics Chapter 13: Optical properties of carbon nanotubes Chapter 14: Carbon nanotube nanomotor Chapter 15: NanoIntegris Chapter 16: Ballistic conduction in single-walled carbon nanotubes Chapter 17: Tunnel field-effect transistor Chapter 18: Field-effect transistor Chapter 19: Carbon nanotubes in interconnects Chapter 20: Synthesis of carbon nanotubes Chapter 21: Vertically aligned carbon nanotube arrays (II) Answering the public top questions about carbon nanotube field effect transistor. (III) Real world examples for the usage of carbon nanotube field effect transistor in many fields. (IV) 17 appendices to explain, briefly, 266 emerging technologies in each industry to have 360-degree full understanding of carbon nanotube field effect transistor' technologies. Who This Book Is For Professionals, undergraduate and graduate students, enthusiasts, hobbyists, and those who want to go beyond basic knowledge or information for any kind of carbon nanotube field effect transistor.
Author: Taekyung Kim
Publisher:
ISBN: 9780549096146
Category :
Languages : en
Pages : 144
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Book Description
Carbon nanotubes (CNTs) are promising materials for future nanoelectronic applications thanks to their excellent electrical and thermal transport properties and the quasi one-dimensional nanostructure. However, there are many structural forms of CNTs and each has its own properties. Correlation of structure and electrical transport properties is still ambiguous. In this thesis, a novel design of field-effect transistor is proposed and constructed. This unique device architecture allows us not only to investigate the electrical transport properties of the nanotubes, but also to characterize atomic structures of the same nanotubes by transmission electron microscopy (TEM). The results obtained form the combined electrical transport measurements and structural characterizations are presented. The current-voltage (I-V) characteristics are interpreted in terms of structural forms of nanotubes. Examples include single-walled nanotube with an intramolecular junction, double-walled nanotube, and nanotube bundles. Depending on the tube configuration with respect to the external electric field, the I-V characteristics are dramatically changed. Comparison with ab initio simulations done at North Carolina State University show that the screening of the electric field breaks the cylindrical symmetry of the tubes and affects their band structure, which is supported by experiments. These results emphasize the importance of atomic structure characterization to our understanding of the electrical transport properties of nanotubes and provide a general approach for future studies of structure-property relationships in 1D nanostructures.
