DEPSCOR 95. Molecular Beam Epitaxy of Non-Stoichiometric III-V Compounds: Theoretical Modeling and Simulation PDF Download
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Languages : en
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Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)(sub Ga) and As(sup 0)(sub Ga) in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of As(+)(sub Ga) and As(sup 0)(sub Ga) concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
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Languages : en
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Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)(sub Ga) and As(sup 0)(sub Ga) in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of As(+)(sub Ga) and As(sup 0)(sub Ga) concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
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Publisher:
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Category :
Languages : en
Pages : 81
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Book Description
Surface dynamics dominate the incorporation and segregation of atoms in the molecular beam epitaxy (MBE) of compound semiconductors. A rate equation model is proposed which includes the presence and dynamics of a physisorbed surface layer containing atoms riding the growth surface. The PA layer dictates the incorporation and concentration of various atomic species, such as AS(+)Ga and AS(0)Ga in low temperature GaAs MBE and In in InGaAs MBE growth. Additionally, it influences the RHEED oscillations (ROs) behavior. The model results for the dependence of AS(+)Ga and AS(0)Ga concentrations on beam equivalent pressure (BEP) and growth temperature are in good agreement with experimental data. Using the same kinetic model for the temporal behavior of the surface, the contribution of the PA layer to the RHEED intensity is computed based on kinematical theory of electron diffraction. The experimental observation of the ROs during growth at high and low temperatures with no ROs in the intermediate temperature range of 300-400 deg C is in good agreement with our model results. The same model is extended to investigate the segregation of In in InGaAs at temperatures in the range of 500-700 deg C for As (both dimer and tetramer) BEPs of 17 and 36. The model results of In incorporation rate versus growth temperature, segregation coefficient versus growth temperature and desorption rate versus time, are in excellent agreement with various results for a wide range of growth conditions reported in the literature. Activation energies for the various surface processes are in good agreement with literature.
Author: Andrew Holmes-Siedle
Publisher: OUP Oxford
ISBN: 9780198507338
Category : Science
Languages : en
Pages : 640
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Book Description
New edition of this practical and educational handbook for engineer-designers and other professionals. It describes the electronic technology of the new millennium and the complex physical and engineering problems that occur when such equipment is exposed to radiation. The authors have an accumulated joint combined experience in the field of about 75 years, giving a broader blend of experience than any existing book in the field.
Author: Burra Sidharth
Publisher: American Institute of Physics
ISBN: 9780735405394
Category : Science
Languages : en
Pages : 0
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Book Description
The 9th International Symposium “Frontiers of Fundamental and Computational Physics”, held in Udine and Trieste, Italy from 7-9 January 2008, aimed at providing a platform for a wide range of physicists to meet and share thoughts on the latest trends in various, mainly cross-disciplinary, research areas. This includes the exploration of frontier lines in High Energy Physics, Theoretical Physics, Gravitation and Cosmology, Astrophysics, Condensed Matter Physics, and Fluid Mechanics. Such frontier lines were unified by the use of computers as an, often primary, research instrument, or dealing with issues related to information theory. These proceedings contain contributions by Nobel Laureates D.D. Osheroff, H. Hroto, and A. Leggett, and concludes with a chapter on new approaches to Physics Teaching.
