Deposition of Hydrogenated Amorphous Silicon with the Hot Wire Technique PDF Download
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Author: Edith C. Molenbroek
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 320
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Book Description
Author: Edith C. Molenbroek
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 320
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Book Description
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Author: Qi Wang
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 4
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Author:
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 0
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Author: Matthew Alan Ring
Publisher:
ISBN:
Category :
Languages : en
Pages : 94
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Book Description
Hot Wire Chemical Vapor Deposition (HWCVD) is an emerging technology in semiconductor materials thin film deposition due to the high growth rates and reasonable electronic properties attainable using this method. To improve the electronic characteristics of material grown by the HWCVD method, neutral ion bombardment during growth was introduced as it is shown to be beneficial in Plasma Enhanced Chemical Vapor Deposition (PECVD). Neutral ion bombardment was accomplished by using remote Electron Cyclotron Resonance (ECR) plasma and the entire deposition technique is termed ECR-HWCVD. The ECR-HWCVD films were compared to HWCVD materials deposited without ion bombardment grown at similar conditions in the same reactor using a 10.5 cm filament to substrate distance to minimize substrate heating by radiation during deposition. The growth rate is halved when ion bombardment is added to HWCVD, however it remains four times greater than the highest quality ECR-PECVD films. Also, ECR-HWCVD material exhibited better electronic properties as shown by Urbach energy, photosensitivity, hydrogen content, microstructure parameters, and space charge limited current defect measurements. In addition, the effect of substrate temperature on hydrogen content and material microstructure was investigated. Both hydrogen content and the microstructure parameter R decreased as substrate temperature increased; and when ion bombardment was added to the deposition conditions, the microstructure parameter decreased regardless of substrate temperature.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 2
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Book Description
We increase the deposition rate of growing hydrogenated amorphous-silicon (a-Si:H) by the hot-wire chemical vapor depositon (HWCVD) technique by adding filaments (two) and decreasing the filament(s) to substrate distance.
Author: Hailan Duan
Publisher:
ISBN:
Category :
Languages : en
Pages : 164
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Book Description
Author: Hideki Matsumura
Publisher: John Wiley & Sons
ISBN: 3527818642
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.
Author: Brent Andrew Sperling
Publisher:
ISBN:
Category :
Languages : en
Pages : 127
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Book Description
Despite the widespread use of hydrogenated amorphous silicon (a-Si:H), the fundamental surface processes during film growth are not well understood. One approach to studying these mechanisms is to analyze the surface morphology that results from their action. In this dissertation, hot-wire chemical vapor deposition is used to deposit a-Si:H thin films. Both post-deposition atomic force microscopy (AFM) and in situ spectroscopic ellipsometry (SE) are used to characterize the surface morphology and its dynamics. Results of this work indicate that the surface morphology is shaped by geometric shadowing of growth particles and thermally-activated smoothening mechanisms. For films grown at low temperature, the local slope of the surface is found to exhibit power law scaling with time that is consistent with anomalous roughening behavior also observed in models that include shadowing. A temperature-dependent transition in roughening behavior is observed, and an activation energy is extracted that agrees with previous estimates for SiH3 surface diffusion. Additionally, a-Si:H grown on rough substrates is examined. Smoothening at short lateral length scales is observed simultaneously with global roughening. Behavior is found to generally agree with deterministic models in the literature. This work also explores the difference between SE and AFM in how roughness is measured. Rayleigh-Rice theory (vector perturbation theory) is used to calculate ellipsometric data that is subsequently compared to the usual method of using an effective medium layer to approximate roughness. SE measurements are found to critically depend on both the vertical extent of roughness and the root-mean-squared slope of the surface.
Author: Ruud E.I. Schropp
Publisher: Springer
ISBN: 1461556317
Category : Technology & Engineering
Languages : en
Pages : 215
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Book Description
Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon. Other scientists have developed new methods for growing these thin films while yet others have developed new photovoltaic (PV) device structures with im proved conversion efficiencies. In the last two years, several companies have constructed multi-megawatt manufacturing plants that can produce large-area, multijunction amorphous silicon PV modules. A growing number of people be lieve that thin-film photovoltaics will be integrated into buildings on a large scale in the next few decades and will be able to make a major contribution to the world's energy needs. In this book, Ruud E. I. Schropp and Miro Zeman provide an authoritative overview of the current status of thin film solar cells based on amorphous and microcrystalline silicon. They review the significant developments that have occurred during the evolution of the technology and also discuss the most im portant recent innovations in the deposition of the materials, the understanding of the physics, and the fabrication and modeling of the devices.
