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Author: Gordon Davies
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 584
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Book Description
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
Author: Gordon Davies
Publisher: Trans Tech Publications
ISBN:
Category : Science
Languages : en
Pages : 584
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Book Description
Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .
Author:
Publisher: Academic Press
ISBN: 0128019409
Category : Technology & Engineering
Languages : en
Pages : 458
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Book Description
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
Author: Filip Tuomisto
Publisher: Institution of Engineering and Technology
ISBN: 1785616552
Category : Technology & Engineering
Languages : en
Pages : 601
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Book Description
Understanding the formation and introduction mechanisms of defects in semiconductors is essential to understanding their properties. Although many defect-related problems have been identified and solved over the past 60 years of semiconductor research, the quest for faster, cheaper, lower power, and new kinds of electronics generates an ongoing need for new materials and properties, and so creates new defect-related challenges.
Author: Gordon Davies
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 572
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Book Description
Author: Johann-Martin Spaeth
Publisher: Springer Science & Business Media
ISBN: 9783540426950
Category : Technology & Engineering
Languages : en
Pages : 508
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Book Description
The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Author: David A. Drabold
Publisher: Springer Science & Business Media
ISBN:
Category : Science
Languages : en
Pages : 320
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Book Description
Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Author: Gordon Davies
Publisher: Trans Tech Publications Ltd
ISBN: 3035704600
Category : Technology & Engineering
Languages : en
Pages : 1596
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Book Description
Proceedings of the 16th International Conference Defects in Semiconductors (ICDS-16), Lehigh University, USA, July 1991
Author: David Redfield
Publisher: Cambridge University Press
ISBN: 0521461960
Category : Science
Languages : en
Pages : 231
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Book Description
A thorough review of the properties of deep-level, localized defects in semiconductors.
Author: Peter Pichler
Publisher: Springer Science & Business Media
ISBN: 3709105978
Category : Technology & Engineering
Languages : en
Pages : 576
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Book Description
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: Edmund G. Seebauer
Publisher: Springer Science & Business Media
ISBN: 1848820593
Category : Science
Languages : en
Pages : 304
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Book Description
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
