DC and RF Characterization of NiSi Schottky Barrier MOSFETs with Dopant Segregation PDF Download
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Author: Christoph Johannes Urban
Publisher: Forschungszentrum Jülich
ISBN: 389336644X
Category :
Languages : en
Pages : 169
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Book Description
Author: Christoph Johannes Urban
Publisher: Forschungszentrum Jülich
ISBN: 389336644X
Category :
Languages : en
Pages : 169
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Book Description
Author: Alexandre Kisner
Publisher: Forschungszentrum Jülich
ISBN: 3893368248
Category :
Languages : en
Pages : 193
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Book Description
Author: Bastian Arlt
Publisher: Forschungszentrum Jülich
ISBN: 3893368191
Category :
Languages : en
Pages : 217
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Book Description
Author: Dzmitry Afanasenkau
Publisher: Forschungszentrum Jülich
ISBN: 3893368639
Category :
Languages : en
Pages : 153
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Book Description
Author: Lin Yang
Publisher: Forschungszentrum Jülich
ISBN: 3893367071
Category :
Languages : en
Pages : 141
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Book Description
Author: Marcel Manheller
Publisher: Forschungszentrum Jülich
ISBN: 3893368108
Category :
Languages : en
Pages : 215
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Book Description
Zsfassung in dt. u. engl. Sprache
Author:
Publisher: Forschungszentrum Jülich
ISBN: 3893368701
Category :
Languages : en
Pages : 415
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Book Description
Author: Alexei Nazarov
Publisher: Springer Science & Business Media
ISBN: 3642158684
Category : Technology & Engineering
Languages : en
Pages : 437
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Book Description
"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author: Francis Balestra
Publisher: John Wiley & Sons
ISBN: 1118622472
Category : Technology & Engineering
Languages : en
Pages : 518
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Book Description
This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
ISBN: 146148054X
Category : Science
Languages : en
Pages : 266
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Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
