Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications PDF Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781721206544
Category :
Languages : en
Pages : 40

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Book Description
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented. Miranda, Felix A. and VanKeuls, Fred W. and Subramanyam, Guru and Mueller, Carl H. and Romanofsky, Robert R. and Rosado, Gerardo Glenn Research Center NASA/TM-2000-208876, E-11586, NAS 1.15:208876

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications PDF Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781721206544
Category :
Languages : en
Pages : 40

Get Book Here

Book Description
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented. Miranda, Felix A. and VanKeuls, Fred W. and Subramanyam, Guru and Mueller, Carl H. and Romanofsky, Robert R. and Rosado, Gerardo Glenn Research Center NASA/TM-2000-208876, E-11586, NAS 1.15:208876

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification PDF Author: National Aeronautics and Space Administration NASA
Publisher:
ISBN: 9781724047311
Category :
Languages : en
Pages : 40

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Book Description
The application of thin ferroelectric films for frequency and phase agile components is the topic of interest of many research groups worldwide. Consequently, proof-of-concepts (POC) of different tunable microwave components using either (HTS, metal)/ferroelectric thin film/dielectric heterostructures or (thick, thin) film "flip-chip" technology have been reported. Either as ferroelectric thin film characterization tools or from the point of view of circuit implementation approach, both configurations have their respective advantages and limitations. However, we believe that because of the progress made so far using the heterostructure (i.e., multilayer) approach, and due to its intrinsic features such as planar configuration and monolithic integration, a study on the correlation of circuit geometry aspects and ferroelectric material properties could accelerate the insertion of this technology into working systems. In this paper, we will discuss our study performed on circuits based on microstrip lines at frequencies above 10 GHz, where the multilayer configuration offers greater ease of insertion due to circuit's size reduction. Modeled results of relevant circuit parameters such as the characteristic impedance, effective dielectric constant, and attenuation as a function of ferroelectric film's dielectric constant, tans, and thickness, will be presented for SrTiO3 and Ba(x)Sr(1-x)TiO3 ferroelectric films. A comparison between the modeled and experimental data for some of these parameters will be presented. Miranda, Felix A. and VanKeuls, Fred W. and Subramanyam, Guru and Mueller, Carl H. and Romanofsky, Robert R. and Rosado, Gerardo Glenn Research Center NASA/TM-2000-208876, E-11586, NAS 1.15:208876

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications: Modeling Examples and Experimental Verification PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 28

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Book Description


Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications

Correlation Between Material Properties of Ferroelectric Thin Films and Design Parameters for Microwave Device Applications PDF Author: Fʹelix A. Miranda
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 20

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Book Description


Science and Technology of Integrated Ferroelectrics

Science and Technology of Integrated Ferroelectrics PDF Author: Carlos Pazde-Araujo
Publisher: CRC Press
ISBN: 9789056997045
Category : Technology & Engineering
Languages : en
Pages : 764

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Book Description
The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports PDF Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702

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Book Description


An Experimental Study of the Correlation of Process Parameters with Y1Ba2Cu3O7-x Thin Film Properties Relevant to Microwave Applications

An Experimental Study of the Correlation of Process Parameters with Y1Ba2Cu3O7-x Thin Film Properties Relevant to Microwave Applications PDF Author: Mojeeb Bin Ihsan
Publisher:
ISBN:
Category :
Languages : en
Pages : 282

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Book Description


Microwave Dielectric Spectroscopy of Ferroelectrics and Related Materials

Microwave Dielectric Spectroscopy of Ferroelectrics and Related Materials PDF Author: Grigas
Publisher: Routledge
ISBN: 1351431420
Category : Technology & Engineering
Languages : en
Pages : 416

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Book Description
In this important book, the author summarizes and generalizes the results of 25 years of work in this exciting field, which has been developing extensively within the last few decades. The reader will find discussions of many crystals that were investigated in the microwave region, including low-dimensional and ferroelectric semiconductors, protonic conductors, quasi-one-dimensional H-bonded. and other order-disorder ferroelectrics. This volume is an essential reference for all scientists and graduate students whose interests are connected to the physics of ferroelectrics and related materials; the physics of structural phase transitions; and superionic conductors. It will also be of value to those interested in developing or exploiting microwave measurement techniques.

Ferroelectric Thin Films X: Volume 688

Ferroelectric Thin Films X: Volume 688 PDF Author: Materials Research Society. Meeting
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 456

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films

Advanced Dielectric, Piezoelectric and Ferroelectric Thin Films PDF Author: Bruce A. Tuttle
Publisher: John Wiley & Sons
ISBN: 1118407229
Category : Technology & Engineering
Languages : en
Pages : 86

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Book Description
Advances in synthesis and characterization of dielectric, piezoelectric and ferroelectric thin films are included in this volume. Dielectric, piezoelectric and ferroelectric thin films have a tremendous impact on a variety of commercial and military systems including tunable microwave devices, memories, MEMS devices, actuators and sensors. Recent work on piezoelectric characterization, AFE to FE dielectric phase transformation dielectrics, solution and vapor deposited thin films, and materials integration are among the topics included. Novel approaches to nanostructuring, characterization of material properties and physical responses at the nanoscale also is included.