Containing paperes presented at the European Materials Research Society 1993 spring meeting, Symposium B: Low Temperature Molecular Beam Epitaxial III - V Materials: Physics and Applications PDF Download
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Author: H. J. von Bardeleben
Publisher:
ISBN:
Category :
Languages : en
Pages : 106
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Author: H. J. von Bardeleben
Publisher:
ISBN:
Category :
Languages : en
Pages : 106
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Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 1118
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Author: Kokuritsu Kokkai Toshokan (Japan)
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1596
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Author:
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ISBN:
Category : Conference proceedings
Languages : en
Pages : 862
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Author: H. J. von Bardeleben
Publisher:
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Category :
Languages : en
Pages :
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Author: J.P. Hirtz
Publisher: Elsevier
ISBN: 1483290425
Category : Science
Languages : en
Pages : 365
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These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
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Category : Aeronautics
Languages : en
Pages : 700
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Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
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Category : Engineering
Languages : en
Pages : 836
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Author: Stuart Irvine
Publisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
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Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
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Category : Science
Languages : en
Pages : 1178
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