CMOS RF Modeling, Characterization and Applications PDF Download
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Author: M. Jamal Deen
Publisher: World Scientific
ISBN: 9789810249052
Category : Science
Languages : en
Pages : 426
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Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author: M. Jamal Deen
Publisher: World Scientific
ISBN: 9789810249052
Category : Science
Languages : en
Pages : 426
Get Book Here
Book Description
CMOS technology has now reached a state of evolution, in terms of both frequency and noise, where it is becoming a serious contender for radio frequency (RF) applications in the GHz range. Cutoff frequencies of about 50 GHz have been reported for 0.18 æm CMOS technology, and are expected to reach about 100 GHz when the feature size shrinks to 100 nm within a few years. This translates into CMOS circuit operating frequencies well into the GHz range, which covers the frequency range of many of today's popular wireless products, such as cell phones, GPS (Global Positioning System) and Bluetooth. Of course, the great interest in RF CMOS comes from the obvious advantages of CMOS technology in terms of production cost, high-level integration, and the ability to combine digital, analog and RF circuits on the same chip. This book discusses many of the challenges facing the CMOS RF circuit designer in terms of device modeling and characterization, which are crucial issues in circuit simulation and design.
Author: Michael S Shur
Publisher: World Scientific
ISBN: 9814477478
Category : Technology & Engineering
Languages : en
Pages : 774
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Book Description
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
Author: Vitali? Vasil?evich Kozlovski?
Publisher: World Scientific
ISBN: 9812703195
Category : Science
Languages : en
Pages : 262
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Book Description
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Author: Sergey Rumyantsev
Publisher: World Scientific
ISBN: 981447777X
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author: A M Rajendran
Publisher: World Scientific
ISBN: 9814476684
Category : Technology & Engineering
Languages : en
Pages : 601
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Book Description
This book provides the reader with a unique opportunity to understand the basic and applied research and technology areas that support applications to enable Transformational capabilities for US Soldiers. The research papers are in line with the theme of the 24th Army Science Conference: “Transformational Science and Technology for the Current and Future Force,” emphasizing the critical role of Science and Technology in addressing the significant challenges posed by Global War On Terrorism while simultaneously developing Transformational capabilities for the Future Force.
Author: Ramesh Harjani
Publisher: World Scientific
ISBN: 9812774580
Category : Computers
Languages : en
Pages : 233
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Book Description
MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible. The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O. Contents: Achieving Analog Accuracy in Nanometer CMOS (M P Flynn et al.); Self-Induced Noise in Integrated Circuits (R Gharpurey & S Naraghi); High-Speed Oversampling Analog-to-Digital Converters (A Gharbiya et al.); Designing LC VCOs Using Capacitive Degeneration Techniques (B Jung & R Harjani); Fully Integrated Frequency Synthesizers: A Tutorial (S T Moon et al.); Recent Advances and Design Trends in CMOS Radio Frequency Integrated Circuits (D J Allstot et al.); Equalizers for High-Speed Serial Links (P K Hanumolu et al.); Low-Power, Parallel Interface with Continuous-Time Adaptive Passive Equalizer and Crosstalk Cancellation (C P Yue et al.). Readership: Technologists, scientists, and engineers in the field of high-speed communication circuits. It can also be used as a textbook for graduate and advanced undergraduate courses.
Author: Michael Shur
Publisher: World Scientific
ISBN: 9812773371
Category : Technology & Engineering
Languages : en
Pages : 342
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Book Description
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Author: Yuyu Liu
Publisher: World Scientific
ISBN: 9814478709
Category : Technology & Engineering
Languages : en
Pages : 242
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Book Description
This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.
Author: William R. Loerop
Publisher: World Scientific
ISBN: 9789812796660
Category : Technology & Engineering
Languages : en
Pages : 434
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Book Description
The last research frontier in high frequency electronics lies in the so-called terahertz (or submillimeter wave) regime, between the traditional microwave and the infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book provides a detailed review of the new THz frequency technological developments that are emerging across a wide spectrum of sensing and technology areas. Volume II presents cutting edge results in two primary areas: (1) research that is attempting to establish THz-frequency sensing as a new characterization tool for chemical, biological and semiconductor materials, and (2) theoretical and experimental efforts to define new device concepts within the OC THz gapOCO. Contents: THz-Frequency Spectroscopic Sensing of DNA and Related Biological Materials (T Globus et al.); Spectroscopy with Electronic Terahertz Techniques for Chemical and Biological Sensing (M K Choi et al.); Terahertz Applications to Biomolecular Sensing (A G Markelz & S E Whitmire); Characteristics of Nano-Scale Composites at THz and IR Spectral Regions (J F Federici & H Grebel); Fundamentals of Terrestrial Millimeter-Wave and THz Remote Sensing (E R Brown); Terahertz Emission Using Quantum Dots and Microcavities (G S Solomon et al.); Terahertz Transport in Semiconductor Quantum Structures (S J Allen & J S Scott); Advanced Theory of Instability in Tunneling Nanostructures (D L Woolard et al.); Wigner Function Simulations of Quantum DeviceOCoCircuits Interactions (H L Grubin & R C Buggeln); Continuous-Wave Terahertz Spectroscopy of Plasmas and Biomolecules (D F Plusquellic et al.). Readership: Undergraduates, graduate students, academics and researchers in engineering and science."
Author: Nabil Derbel
Publisher: Springer Nature
ISBN: 9811517460
Category : Technology & Engineering
Languages : en
Pages : 331
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Book Description
This book focuses on unhealthy cyber-physical systems. Consisting of 14 chapters, it discusses recognizing the beginning of the fault, diagnosing the appearance of the fault, and stopping the system or switching to a special control mode known as fault-tolerant control. Each chapter includes the background, motivation, quantitative development (equations), and case studies/illustration/tutorial (simulations, experiences, curves, tables, etc.). Readers can easily tailor the techniques presented to accommodate their ad hoc applications.
