Chemical Vapor Deposition, Doping and Characterization of and Device Fabrication in Monocrystalline Alpha(6H)-silicon Carbide Thin Films PDF Download
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Author: Yu-Cheng Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 262
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Book Description
Author: Yu-Cheng Wang
Publisher:
ISBN:
Category :
Languages : en
Pages : 262
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Book Description
Author: Hua-shuang Kong
Publisher:
ISBN:
Category :
Languages : en
Pages : 366
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Book Description
Author: W. H. Shafer
Publisher: Springer Science & Business Media
ISBN: 9780306444951
Category : Education
Languages : en
Pages : 368
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Book Description
Volume 36 reports (for thesis year 1991) a total of 11,024 thesis titles from 23 Canadian and 161 US universities. The organization of the volume, as in past years, consists of thesis titles arranged by discipline, and by university within each discipline. The titles are contributed by any and all a
Author: Rongxiang Hu
Publisher:
ISBN:
Category : Chemical vapor deposition
Languages : en
Pages : 384
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Author: Christopher Stephen Roper
Publisher:
ISBN:
Category :
Languages : en
Pages : 390
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Author: Hideki Matsumura
Publisher: John Wiley & Sons
ISBN: 3527818642
Category : Technology & Engineering
Languages : en
Pages : 440
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Book Description
The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.
Author: Frederick Paul Vaccaro
Publisher:
ISBN:
Category :
Languages : en
Pages : 406
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Book Description
ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.
Author: Electrochemical Society. High Temperature Materials Division
Publisher: The Electrochemical Society
ISBN: 9781566771788
Category : Science
Languages : en
Pages : 1686
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Author: John Williams Palmour
Publisher:
ISBN:
Category :
Languages : en
Pages : 254
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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
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Book Description
Major improvements have been made in the fabrication and in the performance characteristics of boron carbide-based, wide-band gap semiconductor devices. During this grant, working boron carbide transistors, tunnel junctions and homojunction diodes were fabricated. These transistors and diodes were the first carbide based devices of their type to be reported in either academic laboratories or in industry. Protocols for boron carbide substrate fabrication were optimized and the boron carbide thin films were deposited on a wide variety of substrates, including Si(111), aluminum, steel, gold, titanium and silver. PACVD (photoassisted chemical vapor deposition) methods using orthocarborane as a source molecule, were tailored to achieve band gaps of up to 4.0 eV with temperature stability to 250 C. The boron carbide material was successfully doped both n-type and p-type, and methods of tuning the band gap by inclusion of phosphorus-containg dimeric chloro-phospha-3-carborane allowed the band gap to be tuned reliably over the range of 0.7 to 2.4 eV by appropriate adjustment of feed gas. A novel class of CVD molecules, the metallocenes, were used for n-type doping. The sensitivity of these molecules to electron or photon beams have also allowed metal wires and other metal-metal containing features to be written with dimensions as small as 500 angstroms in resolution.
