Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing PDF Download
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Author: Peter D. Lowen
Publisher:
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Category :
Languages : en
Pages : 206
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Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
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Author: Mark R. Wilson
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Category :
Languages : en
Pages : 442
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Author: Bill W. Mullins (2LT, USAF.)
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Category : Annealing of crystals
Languages : en
Pages : 112
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Category : Physics
Languages : en
Pages : 1256
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Author: Bill W. Mullins
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Category :
Languages : en
Pages : 66
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The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
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Category : Power resources
Languages : en
Pages : 564
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Author: John E. Van Leeuwen
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Category :
Languages : en
Pages : 224
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Author: M. A. Nicolet
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Category :
Languages : en
Pages : 23
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It is well-known that amorphous GaAs layers produced by ion implantation behave differently upon thermal annealing from amorphized layers of Si or Ge. The special features of GaAs include non-linear regrowth with time, poor epitaxy at low temperatures, and the necessity of high annealing temperatures for electrical activation. Whilst many models have been proposed, the reasons for these differences are unclear. Double crystal x-ray diffractrometry, interpreted with a model of kinematic diffraction is a new tool which can give accurate information about strain and damage in imperfect crystalline films. It may therefore yeild information about structural characteristics that may explain these differences. The present is for a study of implantation and annealing in GaAs and other materials by this technique, as well as by backscattering spectrometry (BSS).
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Category : Electrical engineering
Languages : en
Pages : 2304
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Category : Aeronautics
Languages : en
Pages : 704
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