Characterization of Crystal Growth Defects by X-Ray Methods PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Characterization of Crystal Growth Defects by X-Ray Methods PDF full book. Access full book title Characterization of Crystal Growth Defects by X-Ray Methods by B.K. Tanner. Download full books in PDF and EPUB format.
Author: B.K. Tanner
Publisher: Springer Science & Business Media
ISBN: 1475711263
Category : Science
Languages : en
Pages : 615
Get Book
Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Author: B.K. Tanner
Publisher: Springer Science & Business Media
ISBN: 1475711263
Category : Science
Languages : en
Pages : 615
Get Book
Book Description
This book contains the proceedings of a NATO Advanced Study Institute entitled "Characterization of Crystal Growth Defects by X-ray Methods' held in the University of Durham, England from 29th August to 10th September 1979. The current interest in electronic materials, in particular silicon, gallium aluminium arsenide, and quartz, and the recent availability of synchrotron radiation for X-ray diffraction studies made this Advanced Study Institute particularly timely. Two main themes ran through the course: 1. A survey of the various types of defect occurring in crystal growth, the mechanism of their different methods of generation and their influence on the properties of relativelY perfect crystals. 2. A detailed and advanced course on the observation and characterization of such defects by X-ray methods. The main emphasis was on X-ray topographic techniques but a substantial amount of time was spent on goniometric techniques such as double crystal diffractometry and gamma ray diffraction. The presentation of material in this book reflects these twin themes. Section A is concerned with defects, Section C with techniques and in linking them. Section B provides a concise account of the basic theory necessary for the interpretation of X-ray topographs and diffractometric data. Although the sequence follows roughly the order of presentation at the Advanced Study Institute certain major changes have been made in order to improve the pedagogy. In particular, the first two chapters provide a vital, and seldom articulated, case for the need for characterization for crystals used in device technologies.
Author:
Publisher:
ISBN:
Category : Crystals
Languages : en
Pages : 589
Get Book
Book Description
Author: B. K. Tanner
Publisher:
ISBN: 9781475711271
Category :
Languages : en
Pages : 616
Get Book
Book Description
Author: United States. National Bureau of Standards
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 40
Get Book
Book Description
Author: A. N. Christensen
Publisher: World Scientific Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 568
Get Book
Book Description
This volume contains the the Proceedings of the International School on Crystal Growth and Characterization of Advanced Materials that was held at La Habana University, Cuba, from 30 November to 10 December 1987. Lectures were delivered on various aspects of crystal growth, crystal characterization and material applications
Author: Howard F. McMurdie
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 100
Get Book
Book Description
Author: Herbert Steffen Peiser
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 74
Get Book
Book Description
The National Bureau of Standards is continuing diverse research projects on the growth and characterization of crystals.This note summarizes the individual NBS activities in this and closely related fields during July to December, 1963. Lists of NBS publications appertaining to *that period and of participating NBS scientists are appended.(Author).
Author: Herbert Steffen Peiser
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 52
Get Book
Book Description
The National Bureau of Standards is continuing diverse research projects on the growth and characterization of crystals.This note summarizes the individual NBS activities in this and closely related fie lds during January to July 1963. Lists of NBS publications appertaining to that period and of participating NBS scientists are appended.(Author).
Author: Howard F. McMurdie
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 80
Get Book
Book Description
Author: H. C. Allen
Publisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 28
Get Book
Book Description
The National Bureau of Standards with partial support from the Advanced Research Projects Agency of the Department of Defense is continuing a wide program of studies involving crystalline materials. These include investigation of methods and theory of growth, * study of detection and effects of defects, determination of physical properties, refinement of chemical analysis, and determination of stability relations and atomic structure.The types of materials range from organic compounds, through metals, and inorganic salts to refractory oxides. This report summarizes progress in those projects wholly or partially supported by ARPA.(Author).