Author: Milton L. Cone (MAJ, USAF.)
Publisher:
ISBN:
Category : Cathodoluminescence
Languages : en
Pages :
Book Description
Cathodoluminescence Characterization of Ion Implanted GaAs
Author: Milton L. Cone (MAJ, USAF.)
Publisher:
ISBN:
Category : Cathodoluminescence
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Cathodoluminescence
Languages : en
Pages :
Book Description
Cathodoluminescence Characterization of Ion Implanted GaAs
Author: Milton L. Cone
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
Book Description
The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 135
Book Description
The unique properties of GaAs make it possible to construct integrated circuit devices that are impossible in Si. The Air Force Avionics Laboratory/AADR has been developing this technology for a number of years. The difficulty of introducing dopants by diffusion has lead ion implantation to play an increasing role in the fabrication process. The present production technique for high performance devices is to fabricate large quantities and select those few that meet the desired specifications. Having a nondestructive technique that can be used to characterize the implantation process during fabrication of the device so as to reject faulty device structures can save valuable time as well as money. Depth-resolved cathodoluminescence is a process that can be used for this purpose. This research develops and verifies a model of cathodoluminescence in ion implanted GaAs. This model can now be used as a tool for further study of ion implanted GaAs. This is the first step in developing cathodoluminescence as a tool for deducing the shape of the ion implanted depth profile in semiconductor materials. (Author).
Cathodoluminescence Characterization of Ion Implanted GaAs
Author: Air Force Wright Aeronautical Laboratories
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 112
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Author: Bill W. Mullins (2LT, USAF.)
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
Book Description
Publisher:
ISBN:
Category : Annealing of crystals
Languages : en
Pages : 112
Book Description
Characterization of Laser Annealing of Ion Implanted GaAs and Si Using Optical Reflectivity
Author: Bill W. Mullins
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 66
Book Description
The effect of laser annealing on ion implanted GaAs and Si has been assessed using optical reflectivity spectra. The spectra were recorded over the range of 2100A to 4500A and reflectivity peaks were obtained near 2400A and 4100A for GaAs and 2700A and 3700A for Si. The magnitude of these peaks was then observed as a function of annealing parameters. Laser annealing was carried out using a 30 nsec ruby laser pulse. The GaAs samples were implanted 120 KeV Te at a fluence of 10 to the 14th power ions/sq. cm; Si samples were implanted with 30 KeV In at a fluence of 10 to the 15th power ions/sq cm. The reflectivity spectrum of implanted GaAs was found to return to that of unimplanted materials at an annealing energy density of approximately 0.35 J sq. cm. whereas the spectrum of Si was found to approach that of the unimplanted samples at energy densities of 1.34 J/sq. cm. The values obtained compare well with those obtained from other diagnostic techniques. (Author).
Characterization of Ion Implanted and Annealed GaAs for an Integrated Circuit Process
Author: John E. Van Leeuwen
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Author:
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Publisher: Academic Press
ISBN: 0080864430
Category : Technology & Engineering
Languages : en
Pages : 335
Book Description
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
Technical Abstract Bulletin
Author:
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1186
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 1186
Book Description
Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing
Author: Peter D. Lowen
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 206
Book Description