Author: Steven M. Gorski
Publisher:
ISBN: 9781423509721
Category : Hot carriers
Languages : en
Pages : 93
Book Description
Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.
Carrier Dynamics in Mid-Infrared Quantum Well Lasers Using Time-Resolved Photoluminescence
Author: Steven M. Gorski
Publisher:
ISBN: 9781423509721
Category : Hot carriers
Languages : en
Pages : 93
Book Description
Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.
Publisher:
ISBN: 9781423509721
Category : Hot carriers
Languages : en
Pages : 93
Book Description
Research in mid-infrared laser technology has uncovered numerous applications for commercial and government use. A limiting factor for mid- infrared semiconductors is nonradiative recombination, which is a process that produces excess heat without emitting a photon. Nonradiative recombination mechanisms occur over a short time period and difficult to measure. Growth methods have significantly reduced the nonradiative recombination in some materials. The objective of this research is to further the understanding of how quantum well structures impact carrier recombination. InAsSb/InAlASb and InAs/ GaInSb quantum well structures were studied with time-resolved photoluminescence utilizing upconversion, a non-linear wave mixing technique. This research reports Shockley-Read-Hall, radiative, and Auger recombination coefficients at 77k. The luminescence rise times of type I and type II structures are also compared. The number of states available within the quantum well was found to dictate how quickly carriers were able to recombine radiatively. Finally, spectral data was taken to examine the spectral decay of the luminescence. Carrier temperatures were extracted from the spectral data. Type I structures were found to have hotter carrier temperatures and higher Auger coefficients than type II structures.
Measurement of Ultrafast Carrier Recombination Dynamics in Mid-Infrared Semiconductor Laser Material
Author: William Cooley
Publisher:
ISBN: 9781423565611
Category :
Languages : en
Pages : 210
Book Description
Shockley-Read-Hall, radiative, and Auger recombination rates in mid- infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3. 3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be A(sub SRH) approx.10 x 10(exp 7)/sec, B(sub rad) approx. 2 x 10(exp -10) cu cm/sec and C(sub Auger)
Publisher:
ISBN: 9781423565611
Category :
Languages : en
Pages : 210
Book Description
Shockley-Read-Hall, radiative, and Auger recombination rates in mid- infrared laser structures are measured and reported using time resolved photoluminescence (TRPL) frequency upconversion. The mid-IR lasers studied were actual InAsSb/InAlAsSb multiple-quantum-well (MQW) diode lasers emitting near 3. 3 micrometers which were previously characterized for laser performance. This effort extends the initial studies and reports on the carrier recombination dynamics. Shockley-Read-Hall, radiative and Auger recombination rates at low temperature (77 K) were measured and found to be A(sub SRH) approx.10 x 10(exp 7)/sec, B(sub rad) approx. 2 x 10(exp -10) cu cm/sec and C(sub Auger)
Long Wavelength Infrared Emitters Based on Quantum Wells and Superlattices
Author: Manfred Helm
Publisher: CRC Press
ISBN: 9789056996833
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Publisher: CRC Press
ISBN: 9789056996833
Category : Technology & Engineering
Languages : en
Pages : 424
Book Description
This book offers a thorough survey of long wavelength infrared semiconductor emitters based primarily on quantum wells and superlattices. Featuring contributions from the most prominent researchers in the field, this volume allows readers to compare different types of lasers as well as examine investigations of potential far-infrared/terrahertz sources. This is an essential reference for researchers, engineers and graduate students who wish to obtain comprehensive knowledge about infrared semiconductor sources and recent developments in this field.
Carrier Dynamics in Quantum Well and Quantum Dot Lasers
Author: David J. Klotzkin
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 378
Book Description
Summaries of Papers Presented at the Conference on Lasers and Electro-optics
Author:
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 752
Book Description
Publisher:
ISBN:
Category : Electrooptics
Languages : en
Pages : 752
Book Description
Subpicosecond Carrier Dynamics in Semiconductor Lasers and Lasers Based on Intersubband Transition
Author: Chun-Yung Sung
Publisher:
ISBN:
Category :
Languages : en
Pages : 400
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 400
Book Description
Building Blocks for Time-resolved Laser Emmission in Mid-infrared Quantum Well Lasers
Author: Gabriel D. Mounce
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages :
Book Description
Publisher:
ISBN:
Category : Lasers
Languages : en
Pages :
Book Description
Quantum Well Lasers
Author: Peter S. Zory
Publisher: Academic Press
ISBN: 9780127818900
Category : Science
Languages : en
Pages : 530
Book Description
Provides information on all aspects of QW lasers, from the basic mechanism of optical gain, through the current technological state of the art, to the future technologies of quantum wires and quantum dots. Those working with lasers, especially semiconductor lasers, should find the book useful.
Publisher: Academic Press
ISBN: 9780127818900
Category : Science
Languages : en
Pages : 530
Book Description
Provides information on all aspects of QW lasers, from the basic mechanism of optical gain, through the current technological state of the art, to the future technologies of quantum wires and quantum dots. Those working with lasers, especially semiconductor lasers, should find the book useful.
Mid-infrared Semiconductor Optoelectronics
Author: Anthony Krier
Publisher: Springer
ISBN: 1846282098
Category : Science
Languages : en
Pages : 756
Book Description
Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Publisher: Springer
ISBN: 1846282098
Category : Science
Languages : en
Pages : 756
Book Description
Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Chemical Abstracts
Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
Book Description
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2540
Book Description