Carbon: The Next Silicon?

Carbon: The Next Silicon? PDF Author: Marc J. Madou
Publisher: Momentum Press
ISBN: 1606507249
Category : Technology & Engineering
Languages : en
Pages : 173

Get Book

Book Description
This book provides an introduction to the state-of-the art in C-MEMS/C-NEMS with an emphasis on lithographically patterned photo-polymers, carbonized in an inert atmosphere. We can expand our perspective considerably by learning from the traditional carbon manufacturing community where researchers deal with a much wider variety of carbon feed stocks such as coal, coconut shell, wood, agricultural wastes, and industrial wastes to make all types of useful carbons. The new concepts are introduced by discussing carbon nanomaterials synthesis aided with catalysts and chemistry and detailing the microstructure of the resulting nanocarbons.

Carbon: The Next Silicon?

Carbon: The Next Silicon? PDF Author: Marc J. Madou
Publisher: Momentum Press
ISBN: 1606507249
Category : Technology & Engineering
Languages : en
Pages : 173

Get Book

Book Description
This book provides an introduction to the state-of-the art in C-MEMS/C-NEMS with an emphasis on lithographically patterned photo-polymers, carbonized in an inert atmosphere. We can expand our perspective considerably by learning from the traditional carbon manufacturing community where researchers deal with a much wider variety of carbon feed stocks such as coal, coconut shell, wood, agricultural wastes, and industrial wastes to make all types of useful carbons. The new concepts are introduced by discussing carbon nanomaterials synthesis aided with catalysts and chemistry and detailing the microstructure of the resulting nanocarbons.

Carbon: The Next Silicon?

Carbon: The Next Silicon? PDF Author: Marc J. Madou
Publisher: Momentum Press
ISBN: 1606508849
Category : Technology & Engineering
Languages : en
Pages : 139

Get Book

Book Description
Nuclear Magnetic Resonance (NMR) and Electron Spin Resonance (ESR) spectroscopies are well-known characterization techniques that reveal the molecular details of a sample non-invasively. The authors discuss how NMR can provide useful information on the microstructure of carbon and its surface properties and explain how C-MEMS/C-NEMS technology can be explored for building improved NMR microdevices. The authors highlight the manipulation of fluids and particles by dielectrophoresis and the use of carbon electrodes for dielectrophoresis in Lab-on-a-Chip. The use of these electrodes in sample preparation through electrical polarization of a sample for identification, manipulation, and lysis of bioparticles is also discussed and they introduce a new generation of neural prosthetics based on glassy carbon micromachined electrode arrays. The tuning of the electrical, electrochemical and mechanical properties of these patternable electrodes for applications in bio-electrical signal recording and stimulation, and results from in-vivo testing of these glassy carbon microelectrode arrays is reported, demonstrating a quantifiable superior performance compared to metal electrodes.

Silicon-Germanium Carbon Alloys

Silicon-Germanium Carbon Alloys PDF Author: S. Pantellides
Publisher: CRC Press
ISBN: 9781560329633
Category : Technology & Engineering
Languages : en
Pages : 552

Get Book

Book Description
Carbon (C) and Silicon Germanium (SiGe) work like a magic sauce. At least in small concentrations, they make everything taste better. It is remarkable enough that SiGe, a new material, and the heterobipolar transistor, a new device, appear on the brink of impacting the exploding wireless market. The addition of C to SiGe, albeit in small concentrations, looks to have breakthrough potential. Here, at last, is proof that materials science can put a rocket booster on the silicon-mind, the silicon transistor. Scientific excitement arises, as always, from the new possibilities a multicomponent materials system offers. Bandgaps can be changed, strains can be tuned, and properties can be tailored. This is catnip to the materials scientist. The wide array of techniques applied here to the SiGeC system bear testimony to the ingenious approaches now available for mastering the complexities of new materials

New Frontiers in Nanochemistry: Concepts, Theories, and Trends

New Frontiers in Nanochemistry: Concepts, Theories, and Trends PDF Author: Mihai V. Putz
Publisher: CRC Press
ISBN: 0429663161
Category : Technology & Engineering
Languages : en
Pages : 414

Get Book

Book Description
New Frontiers in Nanochemistry: Concepts, Theories, and Trends, Volume 1: Structural Nanochemistry is the first volume of the new three-volume set that explains and explores the important concepts from various areas within the nanosciences. This first volume focuses on structural nanochemistry and encompasses the general fundamental aspects of nanochemistry while simultaneously incorporating crucial material from other fields, in particular mathematic and natural sciences, with specific attention to multidisciplinary chemistry. Under the broad expertise of the editor, the volume contains 50 concise yet comprehensive entries from world-renowned scholars, alphabetically organizing a multitude of essential basic and advanced concepts, ranging from algebraic chemistry to new energy technology, from the bondonic theory of chemistry to spintronics, and from fractal dimension and kinetics to quantum dots and tight binding—and much more. The entries contain definitions, short characterizations, uses and usefulness, limitations, references, and more.

Silicon Carbide

Silicon Carbide PDF Author: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911

Get Book

Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Next-generation Batteries with Sulfur Cathodes

Next-generation Batteries with Sulfur Cathodes PDF Author: Krzysztof Jan Siczek
Publisher: Academic Press
ISBN: 0128166126
Category : Science
Languages : en
Pages : 259

Get Book

Book Description
Next-Generation Batteries with Sulfur Cathodes provides a comprehensive review of a modern class of batteries with sulfur cathodes, particularly lithium-sulfur cathodes. The book covers recent trends, advantages and disadvantages in Li-S, Na-S, Al-S and Mg-S batteries and why these batteries are very promising for applications in hybrid and electric vehicles. Battery materials and modelling are also dealt with, as is their design, the physical phenomena existing in batteries, and a comparison of batteries between commonly used lithium-ion batteries and the new class of batteries with sulfur cathodes that are useful for devices like vehicles, wind power aggregates, computers and measurement units. Provides solutions for the recycling of batteries with sulfur cathodes Includes the effects of analysis and pro and cons of Li-S, Na-S, Al-S, Mg-S and Zn-S batteries Describes state-of-the-art technological developments and possible applications

New Frontiers in Nanochemistry: Concepts, Theories, and Trends, 3-Volume Set

New Frontiers in Nanochemistry: Concepts, Theories, and Trends, 3-Volume Set PDF Author: Mihai V. Putz
Publisher: CRC Press
ISBN: 0429634099
Category : Science
Languages : en
Pages : 1479

Get Book

Book Description
New Frontiers in Nanochemistry: Concepts, Theories, and Trends, 3-Volume Set explains and explores the important fundamental and advanced modern concepts from various areas of nanochemistry and, more broadly, the nanosciences. This innovative and one-of-a kind set consists of three volumes that focus on structural nanochemistry, topological nanochemistry, and sustainable nanochemistry respectively, collectively forming an explicative handbook in nanochemistry. The compilation provides a rich resource that is both thorough and accessible, encompassing the core concepts of multiple areas of nanochemistry. It also explores the content through a trans-disciplinary lens, integrating the basic and advanced modern concepts in nanochemistry with various examples, applications, issues, tools, algorithms, and even historical notes on the important people from physical, quantum, theoretical, mathematical, and even biological chemistry.

Official Gazette of the United States Patent Office

Official Gazette of the United States Patent Office PDF Author: United States. Patent Office
Publisher:
ISBN:
Category : Patents
Languages : en
Pages : 1216

Get Book

Book Description


Official Gazette of the United States Patent Office

Official Gazette of the United States Patent Office PDF Author: USA Patent Office
Publisher:
ISBN:
Category :
Languages : en
Pages : 1230

Get Book

Book Description


SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices PDF Author: John D. Cressler
Publisher: CRC Press
ISBN: 1351834797
Category : Technology & Engineering
Languages : en
Pages : 425

Get Book

Book Description
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.