Caractérisation et modélisation en radiofréquence de composants intègres en technologies silicium-sur-isolant PDF Download
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Author: Olivier Rozeau
Publisher:
ISBN:
Category :
Languages : fr
Pages : 186
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Book Description
DANS CETTE THESE, NOUS MONTRONS EN QUOI LES TECHNOLOGIES SILICIUM-SUR-ISOLANT (SOI) SONT INTERESSANTES POUR LES APPLICATIONS RADIOFREQUENCES, NOTAMMENT GRACE A DES RESULTATS DE CARACTERISATION DE COMPOSANTS PASSIFS, COMME LES LIGNES DE TRANSMISSION ET LES INDUCTANCES INTEGREES, MAIS AUSSI GRACE A DES ETUDES APPROFONDIES SUR LES PROPRIETES DES TRANSISTORS MOS SUR SOI. DANS UNE PREMIERE PARTIE, LES PROPRIETES EN HAUTE FREQUENCE DES SUBSTRATS SOI SONT DISCUTEES EN METTANT EN EVIDENCE L'AVANTAGE DES SUBSTRATS FORTEMENT RESISTIFS ET SEMI-ISOLANTS. POUR CELA, UN MODELE ANALYTIQUE DE LIGNE DE TRANSMISSION COPLANAIRE A ETE DEVELOPPE AVEC LEQUEL NOUS AVONS PU EVALUER L'IMPACT DE LA RESISTIVITE DU SUBSTRAT SUR LES PERTES DE CE TYPE DE LIGNE. DE PLUS, GRACE A UNE COMPARAISON D'INDUCTANCES INTEGREES SUR SUBSTRATS SOI STANDARD ET DE FORTE RESISTIVITE, CES RESULTATS ONT PU ETRE CONFIRMES. DANS UNE SECONDE PARTIE DE CE TRAVAIL, UNE NOUVELLE METHODE D'EXTRACTION DE SCHEMA EQUIVALENT DE MOSFET SUR SOI, VALABLE POUR DES FREQUENCES ALLANT DE 0,1 A 18 GHZ, EST PRESENTEE. CETTE NOUVELLE METHODE, NOUS A PERMIS D'ANALYSER LES PROPRIETES DES TRANSISTORS MOS SUR SOI DE LONGUEUR DE GRILLE DE 0,25 M DONT LES FREQUENCES DE COUPURES SONT GENERALEMENT SUPERIEURES A 40 GHZ. FINALEMENT, L'IMPACT DE L'AUTO-ECHAUFFEMENT ET DES EFFETS DE SUBSTRAT FLOTTANT SUR LES PERFORMANCES EN RADIOFREQUENCE, TELS QUE L'EFFET KINK ET LE TRANSISTOR BIPOLAIRE PARASITE, BIEN CONNUS DES TECHNOLOGIES SOI, SONT DISCUTES.
Author: Olivier Rozeau
Publisher:
ISBN:
Category :
Languages : fr
Pages : 186
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Book Description
DANS CETTE THESE, NOUS MONTRONS EN QUOI LES TECHNOLOGIES SILICIUM-SUR-ISOLANT (SOI) SONT INTERESSANTES POUR LES APPLICATIONS RADIOFREQUENCES, NOTAMMENT GRACE A DES RESULTATS DE CARACTERISATION DE COMPOSANTS PASSIFS, COMME LES LIGNES DE TRANSMISSION ET LES INDUCTANCES INTEGREES, MAIS AUSSI GRACE A DES ETUDES APPROFONDIES SUR LES PROPRIETES DES TRANSISTORS MOS SUR SOI. DANS UNE PREMIERE PARTIE, LES PROPRIETES EN HAUTE FREQUENCE DES SUBSTRATS SOI SONT DISCUTEES EN METTANT EN EVIDENCE L'AVANTAGE DES SUBSTRATS FORTEMENT RESISTIFS ET SEMI-ISOLANTS. POUR CELA, UN MODELE ANALYTIQUE DE LIGNE DE TRANSMISSION COPLANAIRE A ETE DEVELOPPE AVEC LEQUEL NOUS AVONS PU EVALUER L'IMPACT DE LA RESISTIVITE DU SUBSTRAT SUR LES PERTES DE CE TYPE DE LIGNE. DE PLUS, GRACE A UNE COMPARAISON D'INDUCTANCES INTEGREES SUR SUBSTRATS SOI STANDARD ET DE FORTE RESISTIVITE, CES RESULTATS ONT PU ETRE CONFIRMES. DANS UNE SECONDE PARTIE DE CE TRAVAIL, UNE NOUVELLE METHODE D'EXTRACTION DE SCHEMA EQUIVALENT DE MOSFET SUR SOI, VALABLE POUR DES FREQUENCES ALLANT DE 0,1 A 18 GHZ, EST PRESENTEE. CETTE NOUVELLE METHODE, NOUS A PERMIS D'ANALYSER LES PROPRIETES DES TRANSISTORS MOS SUR SOI DE LONGUEUR DE GRILLE DE 0,25 M DONT LES FREQUENCES DE COUPURES SONT GENERALEMENT SUPERIEURES A 40 GHZ. FINALEMENT, L'IMPACT DE L'AUTO-ECHAUFFEMENT ET DES EFFETS DE SUBSTRAT FLOTTANT SUR LES PERFORMANCES EN RADIOFREQUENCE, TELS QUE L'EFFET KINK ET LE TRANSISTOR BIPOLAIRE PARASITE, BIEN CONNUS DES TECHNOLOGIES SOI, SONT DISCUTES.
Author: Jérôme Lescot
Publisher:
ISBN:
Category :
Languages : fr
Pages : 162
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Book Description
LE TRAVAIL PRESENTE DANS CE MEMOIRE S'ARTICULE AUTOUR DE DEUX AXES COMPLEMENTAIRES. LE PREMIER REPOSE SUR LA MISE EN PLACE D'UN BANC DE MESURE HYPERFREQUENCE SOUS POINTES POUR LA CARACTERISATION ENTRE 45MHZ ET 12GHZ DES COMPOSANTS PASSIFS INTEGRES SUR SILICIUM LES PLUS CRITIQUES, A SAVOIR LES LIGNES DE TRANSMISSION ET INDUCTANCES PLANAIRES. CETTE PARTIE, QUI A MIS EN LUMIERE LES PARASITES SYSTEMATIQUES INHERENTS A L'ANALYSE VECTORIELLE, A PERMIS DE DOTER LE LABORATOIRE D'UN BANC DE MESURE FIABLE ET D'UN ALGORITHME DE CORRECTION D'ERREUR ET D'EXTRACTION AUTOMATIQUE DES MODELES ELECTRIQUES DES COMPOSANTS ETUDIES. LA DEUXIEME PARTIE EST CONSACREE AU DEVELOPPEMENT D'UN OUTIL NUMERIQUE POUR LA PREVISION, AVANT MEME LEUR FABRICATION, DU MODELE ELECTRIQUE ET DES PERFORMANCES DES PASSIFS INTEGRES SUR SILICIUM, A PARTIR DE LA SEULE CONNAISSANCE DE LEUR PARAMETRES GEOMETRIQUES ET TECHNOLOGIQUES. LA METHODE DE CALCUL PROPOSEE S'APPUIE SUR LA COMBINAISON D'OUTILS 2D, PLUS RAPIDES QUE LEUR VERSION 3D, ET TRES BIEN ADAPTES AUX STRUCTURES QUASI-PLANAIRES QUI NOUS PREOCCUPENT. PAR RAPPORT A DES METHODES DEJA EXISTANTES, NOTRE TECHNIQUE QUASI-3D UTILISE UNE METHODE SPECTRALE ROBUSTE NE SE LIMITANT PAS AUX SUBSTRATS FAIBLEMENT DOPES DES TECHNOLOGIES BICMOS OU SOI, MAIS POUVANT AUSSI ETUDIER LES SUBSTRATS FORTEMENT CONDUCTEURS DES TECHNOLOGIES CMOS STANDARDS. APPLIQUEE A DES ECHANTILLONS DE TEST VARIES, LA PROCEDURE DE CARACTERISATION A PERMIS LA VALIDATION EXPERIMENTALE DE L'OUTIL DE MODELISATION SUR DIFFERENTS TYPES DE SUBSTRATS, DU PLUS ISOLANT COMME L'ARSENIURE DE GALLIUM AU PLUS CONDUCTEUR D'UNE TECHNOLOGIE SILICIUM CMOS, EN PASSANT PAR LES WAFERS FAIBLEMENT DOPES DES TECHNOLOGIES SOI ET BICMOS.
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
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Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: W. Gissler
Publisher: Springer Science & Business Media
ISBN: 9780792320067
Category : Technology & Engineering
Languages : en
Pages : 416
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Book Description
The hardest requirements on a material are in general imposed at the surface: it has to be wear resistant for tools and bearings; corrosion resistant for turbine blades; antireflecting for solar cells; and it must combine several of these properties in other applications. `Surface engineering' is the general term that incorporates all the techniques by which a surface modification can be accomplished. These techniques include both the more traditional methods, such as nitriding, boriding and carburizing, and the newer ones, such as ion implantation, laser beam melting and, in particular, coating. This book comprises and compares in a unique way all these techniques of surface engineering. It is a compilation of lectures which were held by renowned scientists and engineers in the frame of the well known `EuroCourses' of the Joint Research Centre of the Commission of the European Communities. The book is principally addressed to material and surface scientists, physicists and chemists, engineers and technicians of industries and institutes where surface engineering problems arise.
Author: Raymond E. March
Publisher: Wiley-Interscience
ISBN: 9780471717980
Category : Science
Languages : en
Pages : 416
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Book Description
A definitive reference, completely updated Published in 1989, the First Edition of this book, originally entitled Quadrupole Storage Mass Spectrometry, quickly became the definitive reference in analytical laboratories worldwide. Revised to reflect scientific and technological advances and new applications in the field, the Second Edition includes new chapters covering: * New ion trap instruments of high sensitivity * Peptide analysis by liquid chromatography/ion trap tandem mass spectrometry * Analytical aspects of ion trap mass spectrometry combined with gas chromatography * Simulation of ion trajectories in the ion trap One additional chapter discusses the Rosetta mission, a "comet chaser" that was sent on a ten-year journey in 2004 to study the comet Churyumov-Gerasimenko using, among other instruments, a GC/MS system incorporating a specially designed ion trap mass spectrometer. This comprehensive reference also includes discussions of the history of the quadrupole ion trap, the theory of quadrupole mass spectrometry, the dynamics of ion-trapping chemistry in the quadrupole ion trap, the cylindrical ion trap, miniature traps, and linear ion traps. Complete with conclusions and references, this primer effectively encapsulates the body of knowledge on quadrupole ion trap mass spectrometry. With its concise descriptions of the theory of ion motion and the principles of operation, Quadrupole Ion Trap Mass Spectrometry, Second Edition is ideal for new users of quadrupole devices, as well as for scientists, researchers, and graduate and post-doctoral students working in analytical laboratories.
Author: Bretislav Friedrich
Publisher: Springer Nature
ISBN: 3030639630
Category : Science
Languages : en
Pages : 639
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Book Description
This Open Access book gives a comprehensive account of both the history and current achievements of molecular beam research. In 1919, Otto Stern launched the revolutionary molecular beam technique. This technique made it possible to send atoms and molecules with well-defined momentum through vacuum and to measure with high accuracy the deflections they underwent when acted upon by transversal forces. These measurements revealed unforeseen quantum properties of nuclei, atoms, and molecules that became the basis for our current understanding of quantum matter. This volume shows that many key areas of modern physics and chemistry owe their beginnings to the seminal molecular beam work of Otto Stern and his school. Written by internationally recognized experts, the contributions in this volume will help experienced researchers and incoming graduate students alike to keep abreast of current developments in molecular beam research as well as to appreciate the history and evolution of this powerful method and the knowledge it reveals.
Author: Fazal Ali
Publisher: Artech House Microwave Library
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 404
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Book Description
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
Author: Agnes Buka
Publisher: World Scientific
ISBN: 1848167997
Category : Science
Languages : en
Pages : 299
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Book Description
The book intends to give a state-of-the-art overview of flexoelectricity, a linear physical coupling between mechanical (orientational) deformations and electric polarization, which is specific to systems with orientational order, such as liquid crystals. Chapters written by experts in the field shed light on theoretical as well as experimental aspects of research carried out since the discovery of flexoelectricity. Besides a common macroscopic (continuum) description the microscopic theory of flexoelectricity is also addressed. Electro-optic effects due to or modified by flexoelectricity as well as various (direct and indirect) measurement methods are discussed. Special emphasis is given to the role of flexoelectricity in pattern-forming instabilities. While the main focus of the book lies in flexoelectricity in nematic liquid crystals, peculiarities of other mesophases (bent-core systems, cholesterics, and smectics) are also reviewed. Flexoelectricity has relevance to biological (living) systems and can also offer possibilities for technical applications. The basics of these two interdisciplinary fields are also summarized.
Author:
Publisher: EurAAP
ISBN: 9788890701801
Category : Technology & Engineering
Languages : en
Pages : 693
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Book Description
Author: Xavier Begaud
Publisher: John Wiley & Sons
ISBN: 1118586573
Category : Technology & Engineering
Languages : en
Pages : 217
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Book Description
Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recognized studies.
