Band Structures of InAsSb Strained-layer Superlattices for Long-wavelength Infrared Detectors PDF Download
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Author: Lifeng Liu
Publisher:
ISBN:
Category : Superlattices as materials
Languages : en
Pages : 78
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Book Description
Author: Lifeng Liu
Publisher:
ISBN:
Category : Superlattices as materials
Languages : en
Pages : 78
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Book Description
Author:
Publisher: Academic Press
ISBN: 0080864309
Category : Technology & Engineering
Languages : en
Pages : 443
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Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Author: Veronica Letka
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: Jeffery L Johnson
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Author: David Lackner
Publisher:
ISBN:
Category : Infrared detectors
Languages : en
Pages : 0
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Book Description
Lately, significant research efforts have been directed towards finding III-V alternatives for HgCdTe infrared detectors for optical gas sensing as well as night and machine vision applications. Despite the advantages of HgCdTe, including a tunable bandgap between 1- 30 mu and a high optical absorption coefficient, difficulties in producing uniform material, which are limiting the size of detector arrays and leading to low yield, combined with challenging epitaxial growth and device processing keeps the technology expensive. Recently InAs/Ga(In)Sb type II short period superlattice detectors with cutoff wavelengths between 3 and 30 mu have been reported. However, these devices all rely on molecular beam epitaxy for the epitaxial growth, as InAs/(In)GaSb short period superlattices of high quality are extremely challenging to realize by organometallic vapour phase epitaxy (OMVPE). OMVPE growth is desirable since it is very suitable for high volume production, which would lead to a significant cost reduction. Thus we have proposed an InAsSb/InAs strain balanced superlattice detector design grown on GaSb. Here, structural and photoluminescence measurements of InAsSb/InAs superlattices are presented for Sb compositions between 4% and 27%. The layer structures were simulated with a state of the art electronic structure calculator based on a self consistent Poisson and Schroedinger equation solver. The calculated transition energies were compared with the measured data. For the first time, the theoretically predicted type IIb alignment, where the InAs conduction band is below the InAsSb conduction band, was confirmed experimentally. The parameters obtained from the simulations were then used to predict the type II transition energies of InAsSb/InAs strain balanced superlattice absorber structures at 77 K for different compositions and periods. The optical matrix element was calculated and compared with that of InAs/(In)GaSb superlattices. The InAsSb/InAs structures can be designed with optical matrix elements that are higher or equal to those of the more well established InAs/Ga(In)Sb superlattices. Finally, initial optical response data of an unoptimized strain balanced InAs0.79Sb0.21/InAs detector is shown. Its cutoff wavelength of 8.5 m (0.15 eV) is in good agreement with the predicted type II transition energy.
Author: Robert M. Biefeld
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 248
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Book Description
Coverage includes: ion implantation; semiconductor characterization; and gallium arsenide.
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 16
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Book Description
The authors report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InPSb as well as mid-infrared optically pumped lasers grown using a high speed rotating disk-reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InPSb active regions. By changing the layer thickness and composition of InAsSb/InPSb SLSs, they have prepared structures with low temperature (
Author: Antoni Rogalski
Publisher: SPIE Press
ISBN: 9780819415820
Category : Technology & Engineering
Languages : en
Pages : 384
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Book Description
Author: Manijeh Razeghi
Publisher: CRC Press
ISBN: 1000674371
Category : Technology & Engineering
Languages : en
Pages : 393
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Book Description
This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.
Author: Antonio Rogalski
Publisher: CRC Press
ISBN: 1420076728
Category : Science
Languages : en
Pages : 900
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Book Description
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
