Atomic-scale Imaging of Surfaces and Interfaces PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Atomic-scale Imaging of Surfaces and Interfaces PDF full book. Access full book title Atomic-scale Imaging of Surfaces and Interfaces by D. K. Biegelsen. Download full books in PDF and EPUB format.
Author: D. K. Biegelsen
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 312
Get Book Here
Book Description
Materials tunneling microscopy for hydrogen-desorption-induced structural change of Si(111) surface; Steps on the (110) surface InP; Scanning tunneling microscopy on charge density waves in layered compounds; Design of ultra high vacuum scanning electron microscope combined with scanning tunneling microscope; Scanning tunneling microscopy perspective of structures on reduced SrTiO3(001) surfaces; Surface structure and electronic property of reduced SrTiO3(100) surface observed by STM/STS; Metastable structural surface excitations and concerted adatom motions: a STM study of atomic motions within a semiconductor surface; Mechanisms and energetics of surface atomic processes: an atom-probe field ion microscope study; Atomic arrangement of Al near the phase boundaries between square root 3X square root 3-Al and 7X7 structures on Si(111) surfaces; Growth and surface morphology of thin silicon films using an atomic force microscope; Solving interface structures by combined electron microscopy and X-ray diffraction; Quantitative hrem study of the atomic structure of the sum(310)/[001] symmetric tilt grain boundary in Nb; Hrtem observation of a sum =3 \{112\} bicrystal boundary in aluminum; Atomic structure of the (310) twin in niobium; theoretical predictions and comparison with experimental observation; Quantitative high-resolution electron microscopy of grain boundaries in gamma-Al2=3; Comparisons of observed and simulated atomic structures of Pd/NiO heterophase interfaces; Atomic structure of sum =5 (130) symmetrical tilt boundary in strontium titanate; Assessment of GaInAs/GaInAsP interdiffusion profiles obtained using stem-edx and hrem; Electron microscopy characterization of epitaxial growth of Ag deposited on MgO microcubes; Real-time viewinf of dynamic processes on CdTe surfaces at elevated temperature; AFM imaging of the crystalline-to-amorphous transition on the surface of ion-implanted mica; AFM imagings of ferritin molecules bound to LB films of poly-1-benzyl-L-histidine; Artifacts in atomic force microscopy of nanoporous and mesoporous fiducial samples; Al induced reconstructions on the Si(111) surfaces studied by scanning tunneling microscopy; Structure of the sum =3 (111) grain boundary in Cu-1.5%Sb; High resolution electron microscopy of sum =3 NiSi2 (111)/(115) Si and NiSi2(221)/(001)Si interfaces; Image simulations of Ge twin boundaries; Surface structure of oxide catalyst microcrystals: high resolution electron microscopy study; A microstructural study of reaction-bonded silicon carbide...
Author: D. K. Biegelsen
Publisher:
ISBN:
Category : Computers
Languages : en
Pages : 312
Get Book Here
Book Description
Materials tunneling microscopy for hydrogen-desorption-induced structural change of Si(111) surface; Steps on the (110) surface InP; Scanning tunneling microscopy on charge density waves in layered compounds; Design of ultra high vacuum scanning electron microscope combined with scanning tunneling microscope; Scanning tunneling microscopy perspective of structures on reduced SrTiO3(001) surfaces; Surface structure and electronic property of reduced SrTiO3(100) surface observed by STM/STS; Metastable structural surface excitations and concerted adatom motions: a STM study of atomic motions within a semiconductor surface; Mechanisms and energetics of surface atomic processes: an atom-probe field ion microscope study; Atomic arrangement of Al near the phase boundaries between square root 3X square root 3-Al and 7X7 structures on Si(111) surfaces; Growth and surface morphology of thin silicon films using an atomic force microscope; Solving interface structures by combined electron microscopy and X-ray diffraction; Quantitative hrem study of the atomic structure of the sum(310)/[001] symmetric tilt grain boundary in Nb; Hrtem observation of a sum =3 \{112\} bicrystal boundary in aluminum; Atomic structure of the (310) twin in niobium; theoretical predictions and comparison with experimental observation; Quantitative high-resolution electron microscopy of grain boundaries in gamma-Al2=3; Comparisons of observed and simulated atomic structures of Pd/NiO heterophase interfaces; Atomic structure of sum =5 (130) symmetrical tilt boundary in strontium titanate; Assessment of GaInAs/GaInAsP interdiffusion profiles obtained using stem-edx and hrem; Electron microscopy characterization of epitaxial growth of Ag deposited on MgO microcubes; Real-time viewinf of dynamic processes on CdTe surfaces at elevated temperature; AFM imaging of the crystalline-to-amorphous transition on the surface of ion-implanted mica; AFM imagings of ferritin molecules bound to LB films of poly-1-benzyl-L-histidine; Artifacts in atomic force microscopy of nanoporous and mesoporous fiducial samples; Al induced reconstructions on the Si(111) surfaces studied by scanning tunneling microscopy; Structure of the sum =3 (111) grain boundary in Cu-1.5%Sb; High resolution electron microscopy of sum =3 NiSi2 (111)/(115) Si and NiSi2(221)/(001)Si interfaces; Image simulations of Ge twin boundaries; Surface structure of oxide catalyst microcrystals: high resolution electron microscopy study; A microstructural study of reaction-bonded silicon carbide...
Author: Klaus Wandelt
Publisher: John Wiley & Sons
ISBN: 3527411569
Category : Science
Languages : en
Pages : 1010
Get Book Here
Book Description
Covering interface science from a novel surface science perspective, this unique handbook offers a comprehensive overview of this burgeoning field. Eight topical volumes cover basic concepts and methods, elemental and composite surfaces, solid-gas, solid-liquid and inorganic biological interfaces, as well as applications of surface science in nanotechnology, materials science and molecular electronics. With its broad scope and clear structure, it is ideal as a reference for scientists in the field, as well as an introduction for newcomers.
Author: Patricia Maurice
Publisher: John Wiley & Sons
ISBN: 0470400366
Category : Science
Languages : en
Pages : 469
Get Book Here
Book Description
An advanced exploration ofwater-rock interactions Based on the author's fifteen years of teaching and tried-and-tested experiences in the classroom, here is a comprehensive exploration of water-rock interactions. Environmental Surfaces and Interfaces from the Nanoscale to the Global Scale covers aspects ranging from the theory of charged particle surfaces to how minerals grow and dissolve to new frontiers in W-R interactions such as nanoparticles, geomicrobiology, and climate change. Providing basic conceptual understanding along with more complex subject matter, Professor Patricia Maurice encourages students to look beyond the text to ongoing research in the field. Designed to engage the learner, the book features: Numerous case studies to contextualize concepts Practice and thought questions at the end of each chapter Broad coverage from basic theory to cutting-edge topics such as nanotechnology Both basic and applied science This text goes beyond W-R interactions to touch on a broad range of environmental disciplines. While written for advanced undergraduate and graduate students primarily in geochemistry and soil chemistry, Environmental Surfaces and Interfaces from the Nanoscale to the Global Scale will serve the needs of such diverse fields as environmental engineering, hydrogeology, physics, biology, and environmental chemistry.
Author:
Publisher:
ISBN:
Category : Atomic structure
Languages : en
Pages : 288
Get Book Here
Book Description
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 892
Get Book Here
Book Description
Author: J. Lyklema
Publisher: Elsevier
ISBN: 0080507123
Category : Technology & Engineering
Languages : en
Pages : 787
Get Book Here
Book Description
Interface and colloid science is an important, though often under-valued, branch of science. It has applications and ramifications in domains as disparate as agriculture, mineral dressing, oil recovery, chemical industry, biotechnology, medical science, and many more. Proper application of interface and colloid science requires factual knowledge and insight into the many basic laws of physics and chemistry upon which it is based. Fundamentals of Interface and Colloid Science is the first book to cover this field in the depth neccessary to be a valuable reference and an excellent textbook.From the beginning to the end of the book, systems of growing complexity are treated gradually. The presentation is particularly suited to emphasize that interfaces are not autonomous phases. As a rule, interfacial properties can be varied only by changing the adjoining phases, so that the properties of these bulk phases must be understood first. The text also recognizes common principles behind a variety of phenomena, and helps the reader to understand them and to develop and improve processes. The systematic treatment of the material in the book makes this clear, and makes the text itself an important contribution to the field. - Systematic treatment of information - An excellent addition to volume I - Two chapters contributed by other experts in the field - Uses a deductive approach to increase the order of complexity - Written by a leading expert in the field - Two chapters contributed by other outstanding scientists - Uses a systematic and deductive approach - First comprehensive review of the topic
Author: D.A. King
Publisher: Elsevier
ISBN: 0444601309
Category : Science
Languages : en
Pages : 489
Get Book Here
Book Description
Surface Properties of Electronic Materials is the fifth volume of the series, The Chemical Physics of Solid Surfaces and Heterogeneous Catalysis. This volume indicates the present state of some basic properties of semiconductor surfaces. Chapter one summarizes the general problems in electronic materials and the areas affected by the surface science methods. The next two chapters illustrate the existing perception of the electronic and structural properties of elemental and compound semiconductor surfaces. This volume also deals with the properties of adsorption of semiconductors relating to both relevant gas phase species and metals. Chapters four to six of this volume explore compound semiconductors and elemental semiconductors. The remaining chapters of this volume explore the adsorption of metals on elemental semiconductors; aspects of growth kinetics and dynamics involved in molecular beam epitaxy; molecular beam epitaxy of silicon; insulators; and metastable phases. The last chapter covers the surface chemistry of dry etching processes.
Author:
Publisher:
ISBN:
Category : Research
Languages : en
Pages : 126
Get Book Here
Book Description
Author: Ugo Valdre
Publisher: Springer Science & Business Media
ISBN: 1461595371
Category : Science
Languages : en
Pages : 321
Get Book Here
Book Description
The importance of real space imaging and spatially-resolved spectroscopy in many of the most significant problems of surface and interface behaviour is almost self evident. To join the expertise of the tradi tional surface scientist with that of the electron microscopist has however been a slow and difficult process. In the past few years remarkable progress has been achieved, including the development of new techniques of scanning transmission and reflection imaging as well as low energy microscopy, all carried out in greatly improved vacuum conditions. Most astonishing of all has been the advent of the scanning tunneling electron microscope providing atomic resolution in a manner readily compatible with most surface science diagnostic procedures. The problem of beam damage, though often serious, is increasingly well understood so that we can assess the reliability and usefulness of the results which can now be obtained in catalysis studies and a wide range of surface science applications. These new developments and many others in more established surface techniques are all described in this book, based on lectures given at a NATO Advanced Study Institute held in Erice, Sicily, at Easter 1987. It is regretted that a few lectures on low energy electron diffraction and channeling effects could not be included. Fifteen lecturers from seven different Countries and 67 students from 23 Countries and a wide variety of backgrounds attended the school.
Author:
Publisher: Newnes
ISBN: 0080932282
Category : Science
Languages : en
Pages : 3572
Get Book Here
Book Description
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
