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Author: Sheldon Datz
Publisher: Springer Science & Business Media
ISBN: 146843117X
Category : Science
Languages : en
Pages : 473
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Book Description
Perhaps the most controversiaZ aspect of this voZume is the number (V) assigned to the conference in this series. ActuaZZy, the first conference to be heZd under the titZe '~tomic CoZZisions in SoZids" was heZd at Sussex University in EngZand in 1969 and the second at GausdaZ, Norway in 1971, which wouZd ZogicaZZy make the conference heZd at GatZinburg, Tennessee, U.S.A. in 1973 the third (III). However, the appearance of the proceedings of the 1971 GausdaZ Conference (pubZished by Gordon and Breach) bore the number IV. The reasoning behind this was that, in fact, two pre vious conferences had been ZargeZy dedicated to the same subject area. The first of these Was at Aarhus, Denmark in 1965 and the second in 1967 was heZd in ChaZk River, Canada. Hence, the number V for the 1973 meeting. ActuaZZy, the conference can easiZy be traced back to Paris, France in 196Z when it went under the coZorfuZ titZe of '~e Bom bardement Ionique." In 1962 a smaZZ conference was heZd at Oak Ridge, Tennessee, U.S.A. at which the discovery of channeZing was first formaZZy annunciated. This was foZZowed by conferences at ChaZk River, Canada in 1963 and at HarweZZ, EngZand in 1964. More over, immediateZy foZZowing the ChaZk RiVer conference in 1967 there was a conference on higher energy coZZisions at Brookhaven, New York, U.S.A. Thus, strictly speaking, the Gatlinburg meeting is the tenth (X) in the series.
Author: Sheldon Datz
Publisher: Springer Science & Business Media
ISBN: 146843117X
Category : Science
Languages : en
Pages : 473
Get Book Here
Book Description
Perhaps the most controversiaZ aspect of this voZume is the number (V) assigned to the conference in this series. ActuaZZy, the first conference to be heZd under the titZe '~tomic CoZZisions in SoZids" was heZd at Sussex University in EngZand in 1969 and the second at GausdaZ, Norway in 1971, which wouZd ZogicaZZy make the conference heZd at GatZinburg, Tennessee, U.S.A. in 1973 the third (III). However, the appearance of the proceedings of the 1971 GausdaZ Conference (pubZished by Gordon and Breach) bore the number IV. The reasoning behind this was that, in fact, two pre vious conferences had been ZargeZy dedicated to the same subject area. The first of these Was at Aarhus, Denmark in 1965 and the second in 1967 was heZd in ChaZk River, Canada. Hence, the number V for the 1973 meeting. ActuaZZy, the conference can easiZy be traced back to Paris, France in 196Z when it went under the coZorfuZ titZe of '~e Bom bardement Ionique." In 1962 a smaZZ conference was heZd at Oak Ridge, Tennessee, U.S.A. at which the discovery of channeZing was first formaZZy annunciated. This was foZZowed by conferences at ChaZk River, Canada in 1963 and at HarweZZ, EngZand in 1964. More over, immediateZy foZZowing the ChaZk RiVer conference in 1967 there was a conference on higher energy coZZisions at Brookhaven, New York, U.S.A. Thus, strictly speaking, the Gatlinburg meeting is the tenth (X) in the series.
Author: Roger Smith
Publisher: Cambridge University Press
ISBN: 052144022X
Category : Science
Languages : en
Pages : 323
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Book Description
A 1997 monograph on simulation for condensed matter physicists, materials scientists, chemists and electrical engineers.
Author: Sheldon Datz
Publisher:
ISBN: 9781461589976
Category :
Languages : en
Pages : 484
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Book Description
Author: Sheldon Datz
Publisher: Springer Science & Business Media
ISBN: 1461589967
Category : Science
Languages : en
Pages : 450
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Book Description
"Perhaps the most controversial aspect of this volume is the number (V) assigned to the conference in this series. Actually, the first conference to be held under the title "Atomic Collisions in Solids" was held at Sussex University in England in 1969 and the second at Gausdal, Norway in 1971, which would logically make the conference held at Gatlinburg, Tennessee, U.S.A. in 1973 the third (III). However, the appearance of the proceedings of the 1971 Gausdal Conference (published by Gordon and Breach) bore the number IV. The reasoning behind this was that, in. fact, two previous conferences had been largely dedicated to the same subject area. The first of these was at Aarhus, Denmark in 1965 and the second in 1967 was held in Chalk River, Canada. Hence, the number V for the 1973 meeting."--Page v
Author: Michael Nastasi
Publisher: Cambridge University Press
ISBN: 052137376X
Category : Science
Languages : en
Pages : 572
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Book Description
Comprehensive guide to an important materials science technique for students and researchers.
Author: Sheldon Datz
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 510
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Book Description
Author: Philip George Burke
Publisher: Springer Science & Business Media
ISBN: 3642159311
Category : Science
Languages : en
Pages : 750
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Book Description
Commencing with a self-contained overview of atomic collision theory, this monograph presents recent developments of R-matrix theory and its applications to a wide-range of atomic molecular and optical processes. These developments include the electron and photon collisions with atoms, ions and molecules which are required in the analysis of laboratory and astrophysical plasmas, multiphoton processes required in the analysis of superintense laser interactions with atoms and molecules and positron collisions with atoms and molecules required in antimatter studies of scientific and technologial importance. Basic mathematical results and general and widely used R-matrix computer programs are summarized in the appendices.
Author: E. S. Parilis
Publisher: North Holland
ISBN:
Category : Science
Languages : en
Pages : 690
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Book Description
This book deals with the theory of collisions of medium-energy atoms on the surface of a solid and the accompanying effects, namely, atom and molecule scattering, charge exchange, sputtering of atoms and large biomolecules, ion and electron emission. The topics covered include analytical theories and computer investigations which the authors made over the past 30 years. Special attention is paid to the development of the models and mechanisms for the phenomena occurring at atomic collisions on solid surfaces. The secondary processes are described for the various combinations of incident ions and a solid. Single- and multiple-charged ions are used as the incident ions bombarding targets being different both in structure (single crystal, polycrystal and amorphous) and electronic properties (metal, semiconductor and insulator). One of the major goals of the studies discussed is the development of a theoretical foundation for the diagnostics of the composition, structure and state of the surface of solids and thin films, as well as for their quality control in present day technology. The book will be of interest to all those involved in ion-solid interaction studies.
![ATOMIC COLLISIONS IN SOLIDS [Vols 1-2]. PDF](https://books.google.com/books/content/images/frontcover/oaJAvwEACAAJ?fife=w80-h100)
Author: S DATZ (ED.)
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: R. S. Nelson
Publisher: Elsevier
ISBN: 1483275191
Category : Science
Languages : en
Pages : 299
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Book Description
The Observation of Atomic Collisions in Crystalline Solids presents a critical account of the more important experiments which have provided the basis for a better understanding of atomic collision phenomena in crystalline solids. Collisions have been divided into two artificial regimes; primary collisions which deal with the interaction of the incident particles with the solid, and secondary collisions which deal with those events which occur as a result of lattice atoms recoiling from primary encounters. Although the book is intended principally for the experimentalist some simple theoretical models have been introduced. It is hoped that the book will provide a useful introduction to the subject of atomic collisions in solids for the post-graduate research student, as well as providing a collection of the most important experimental data for established scientists actively engaged in the field. It is also intended to provide a background for the technologist engaged in such fields as the ion implantation doping of semiconductors.
