Antimonide-based Infrared Detectors PDF Download
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Author: Antoni Rogalski
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9781510611399
Category : Antimonides
Languages : en
Pages :
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Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Author: Antoni Rogalski
Publisher: SPIE-International Society for Optical Engineering
ISBN: 9781510611399
Category : Antimonides
Languages : en
Pages :
Get Book Here
Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Author: Antoni Rogalski
Publisher:
ISBN: 9781510611412
Category : Antimonides
Languages : en
Pages : 273
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Book Description
"Among the many materials investigated in the infrared (IR) field, narrow-gap semiconductors are the most important in IR photon detector family. Although the first widely used narrow-gap materials were lead salts (during the 1950s, IR detectors were built using single-element-cooled PbS and PbSe photoconductive detectors, primary for anti-missile seekers), this semiconductor family was not well distinguished. This situation seems to have resulted from two reasons: the preparation process of lead salt photoconductive polycrystalline detectors was not well understood and could only be reproduced with well-tried recipes; and the theory of narrow-gap semiconductor bandgap structure was not well known for correct interpretation of the measured transport and photoelectrical properties of these materials"--
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Koon-Hung Steven Sim
Publisher: Open Dissertation Press
ISBN: 9781374749726
Category : Technology & Engineering
Languages : en
Pages : 110
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Book Description
This dissertation, "Antimonide Based Quantum-well and Its Application in Infrared Photodetector" by Koon-hung, Steven, Sim, 沈觀洪, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3122334 Subjects: Antimony Quantum wells Infrared detectors
Author: Jian Li
Publisher:
ISBN:
Category :
Languages : en
Pages : 194
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Book Description
Author: Vinay Bhagwat
Publisher:
ISBN: 9780542106477
Category :
Languages : en
Pages : 165
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Book Description
Author: Philco Corporation
Publisher:
ISBN:
Category : Indium antimonide
Languages : en
Pages : 28
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Book Description
Author: Daniel Yuan Zuo
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Author: Antonio Rogalski
Publisher: CRC Press
ISBN: 1420076728
Category : Science
Languages : en
Pages : 900
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Book Description
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Author: Martin Mandl
Publisher:
ISBN:
Category :
Languages : en
Pages :
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Book Description
Numerous applications within the mid- and long-wavelength infrared are driving the search for efficient and cost effective detection technologies in this regime. Theoretical calculations have predicted high performance for InAs/GaSb type-II superlattice structures, which rely on mature growth of III-V semiconductors and offer many levels of freedom in design due to band structure engineering. This work focuses on the fabrication and characterization of type-II superlattice infrared detectors. Standard UV-based photolithography was used combined with chemical wet or dry etching techniques in order to fabricate antinomy-based type-II superlattice infrared detectors. Subsequently, Fourier transform infrared spectroscopy and radiometric techniques were applied for optical characterization in order to obtain a detector's spectrum and response, as well as the overall detectivity in combination with electrical characterization. Temperature dependent electrical characterization was used to extract information about the limiting dark current processes. This work resulted in the first demonstration of an InAs/GaSb type-II superlattice infrared photodetector grown by metalorganic chemical vapor deposition. A peak detectivity of 1.6x10^9 Jones at 78 K was achieved for this device with a 11 micrometer zero cutoff wavelength. Furthermore the interband tunneling detector designed for the mid-wavelength infrared regime was studied. Similar results to those previously published were obtained.
