Author: Charles T. Chase
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate each cell with an irradiance of 2.5 W/sq cm, producing a current density 7 to 10 times larger than under AMO conditions. Cells were annealed at 48.5 deg C, 60 deg C, and 75 deg C for periods of 15 to 60 minutes, and cooled to 25 deg C for power recovery determination. Annealing at 48.5 deg C resulted in a recovery of 17 to 18% of the power lost due to irradiation, and annealing cells at 60 deg C produced a recovery of 43 to 48%. A single test of the technique at 75 deg C produced a net recovery of only 21% of the power lost. These results indicate that significant power recovery results from the annealing of defects within InP solar cells. Continuing research should involve the repeating of the test at 75 deg C, and irradiations with electrons or protons of energies expected in the space environment.
Annealing of Defect Sites in Radiation Damaged Indium Phosphide Solar Cells Through Laser Illumination
Author: Charles T. Chase
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate each cell with an irradiance of 2.5 W/sq cm, producing a current density 7 to 10 times larger than under AMO conditions. Cells were annealed at 48.5 deg C, 60 deg C, and 75 deg C for periods of 15 to 60 minutes, and cooled to 25 deg C for power recovery determination. Annealing at 48.5 deg C resulted in a recovery of 17 to 18% of the power lost due to irradiation, and annealing cells at 60 deg C produced a recovery of 43 to 48%. A single test of the technique at 75 deg C produced a net recovery of only 21% of the power lost. These results indicate that significant power recovery results from the annealing of defects within InP solar cells. Continuing research should involve the repeating of the test at 75 deg C, and irradiations with electrons or protons of energies expected in the space environment.
Publisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate each cell with an irradiance of 2.5 W/sq cm, producing a current density 7 to 10 times larger than under AMO conditions. Cells were annealed at 48.5 deg C, 60 deg C, and 75 deg C for periods of 15 to 60 minutes, and cooled to 25 deg C for power recovery determination. Annealing at 48.5 deg C resulted in a recovery of 17 to 18% of the power lost due to irradiation, and annealing cells at 60 deg C produced a recovery of 43 to 48%. A single test of the technique at 75 deg C produced a net recovery of only 21% of the power lost. These results indicate that significant power recovery results from the annealing of defects within InP solar cells. Continuing research should involve the repeating of the test at 75 deg C, and irradiations with electrons or protons of energies expected in the space environment.
Annealing of Defect Sites in Radiation Damaged Indium Phosphide Solar Cells Through Laser Illumination
Author: Charles T. Chase
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate each cell with an irradiance of 2.5 W/sq cm, producing a current density 7 to 10 times larger than under AMO conditions. Cells were annealed at 48.5 deg C, 60 deg C, and 75 deg C for periods of 15 to 60 minutes, and cooled to 25 deg C for power recovery determination. Annealing at 48.5 deg C resulted in a recovery of 17 to 18% of the power lost due to irradiation, and annealing cells at 60 deg C produced a recovery of 43 to 48%. A single test of the technique at 75 deg C produced a net recovery of only 21% of the power lost. These results indicate that significant power recovery results from the annealing of defects within InP solar cells. Continuing research should involve the repeating of the test at 75 deg C, and irradiations with electrons or protons of energies expected in the space environment.
Publisher:
ISBN:
Category :
Languages : en
Pages : 113
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide diffused junction solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a moderate heating and a large forward-biased current. The InP cells were irradiated with 27 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate each cell with an irradiance of 2.5 W/sq cm, producing a current density 7 to 10 times larger than under AMO conditions. Cells were annealed at 48.5 deg C, 60 deg C, and 75 deg C for periods of 15 to 60 minutes, and cooled to 25 deg C for power recovery determination. Annealing at 48.5 deg C resulted in a recovery of 17 to 18% of the power lost due to irradiation, and annealing cells at 60 deg C produced a recovery of 43 to 48%. A single test of the technique at 75 deg C produced a net recovery of only 21% of the power lost. These results indicate that significant power recovery results from the annealing of defects within InP solar cells. Continuing research should involve the repeating of the test at 75 deg C, and irradiations with electrons or protons of energies expected in the space environment.
Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-Ion Laser Annealing
Author: Lynn L. Boyer
Publisher:
ISBN: 9781423584957
Category :
Languages : en
Pages : 149
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.
Publisher:
ISBN: 9781423584957
Category :
Languages : en
Pages : 149
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells.
Power Recovery of Radiation Damaged MOCVD Grown Indium Phosphide on Silicon Solar Cells Through Argon-ion Laser Annealing
Author: Lynn L. Boyer
Publisher:
ISBN:
Category :
Languages : en
Pages : 133
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells. Distribution Limitation(s).
Publisher:
ISBN:
Category :
Languages : en
Pages : 133
Book Description
This thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells. Distribution Limitation(s).
Synerjy
Author:
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 618
Book Description
Publisher:
ISBN:
Category : Power resources
Languages : en
Pages : 618
Book Description
International Aerospace Abstracts
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 510
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 510
Book Description
Scientific and Technical Aerospace Reports
Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1572
Book Description
Proceedings of the 13th Space Photovoltaic Research and Technology Conference (SPRAT 13)
Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 488
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 488
Book Description
Laser Annealing of Amorphous/Poly
Author: National Aeronautics and Space Administration (NASA)
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722334758
Category :
Languages : en
Pages : 32
Book Description
The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment. Cole, Eric E. Unspecified Center NAG5-1294...
Publisher: Createspace Independent Publishing Platform
ISBN: 9781722334758
Category :
Languages : en
Pages : 32
Book Description
The preliminary design proposed for the microelectronics materials processing equipment is presented. An overall mission profile, description of all processing steps, analysis methods and measurement techniques, data acquisition and storage, and a preview of the experimental hardware are included. The goal of the project is to investigate the viability of material processing of semiconductor microelectronics materials in a micro-gravity environment. The two key processes are examined: (1) Rapid Thermal Annealing (RTA) of semiconductor thin films and damaged solar cells, and (2) thin film deposition using a filament evaporator. The RTA process will be used to obtain higher quality crystalline properties from amorphous/poly-silicon films. RTA methods can also be used to repair radiation-damaged solar cells. On earth this technique is commonly used to anneal semiconductor films after ion-implantation. The damage to the crystal lattice is similar to the defects found in solar cells which have been exposed to high-energy particle bombardment. Cole, Eric E. Unspecified Center NAG5-1294...
Beamed Energy Propulsion
Author:
Publisher:
ISBN:
Category : Lasers in astronautics
Languages : en
Pages : 750
Book Description
Publisher:
ISBN:
Category : Lasers in astronautics
Languages : en
Pages : 750
Book Description