Author: Todd Conklin
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
An Analytical Approach to Modeling InP-based NPN Heterojunction Bipolar Transistors
Author: Todd Conklin
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
Analytical Modeling of Thermal Effects in Pnp InP-based Heterojunction Bipolar Transistors
Author: Robert E. Peddenpohl
Publisher:
ISBN:
Category :
Languages : en
Pages : 204
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 204
Book Description
Modeling and Performance of Ultrafast InP Based Heterojunction Bipolar Transistors and Circuits
Author: Benny Sheinman
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 224
Book Description
Advances in Photodiodes
Author: Gian-Franco Dalla Betta
Publisher: BoD – Books on Demand
ISBN: 953307163X
Category : Technology & Engineering
Languages : en
Pages : 482
Book Description
Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.
Publisher: BoD – Books on Demand
ISBN: 953307163X
Category : Technology & Engineering
Languages : en
Pages : 482
Book Description
Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.
Physics Based Analytical Modeling of SiGe Heterojunction Bipolar Transistors for High Speed Integrated Circuits
Author: Tran-Hoang-Hung
Publisher:
ISBN: 9783940046017
Category :
Languages : en
Pages : 150
Book Description
Publisher:
ISBN: 9783940046017
Category :
Languages : en
Pages : 150
Book Description
InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification
Author: Donald James Sawdai
Publisher:
ISBN:
Category :
Languages : en
Pages : 602
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 602
Book Description
Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII)
Author: F. Ren
Publisher: The Electrochemical Society
ISBN: 9781566771160
Category : Technology & Engineering
Languages : en
Pages : 524
Book Description
Publisher: The Electrochemical Society
ISBN: 9781566771160
Category : Technology & Engineering
Languages : en
Pages : 524
Book Description
A Numerical Simulation of InP-based PNP Heterojunction Bipolar Transistors
Author: Shen Shi
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 402
Book Description
Simulation, Design, and Fabrication of InP-based Pnp Heterojunction Bipolar Transistors
Author: Suman Datta
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 552
Book Description
Physics-based compact modeling and parameter extraction for InP heterojunction bipolar transistors with special emphasis on material-specific physical effects and geometry scaling
Author: Tobias Nardmann
Publisher: BoD – Books on Demand
ISBN: 3744847063
Category : Technology & Engineering
Languages : en
Pages : 242
Book Description
The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.
Publisher: BoD – Books on Demand
ISBN: 3744847063
Category : Technology & Engineering
Languages : en
Pages : 242
Book Description
The trend in modern electronics towards ever higher frequencies of operation and complexity as well as power efficiency requires a whole palette of different technologies to be available to circuit designers for various applications. While MOSFETs dominate the digital world, they have apparently reached their top analogue performance around the 65nm node. Emerging technologies such as CNTFETs offer excellent properties such as very high linearity and speed in theory, but have yet to deliver on those promises in practice. Heterojunction bipolar transistors (HBTs), on the other hand, offer a number of key advantages over competing technologies: A very high transconductance and therefore a relatively low impact of a load impedance on the transistor operation, a high transit frequency and maximum frequency of oscillation at a comparatively relaxed feature size and favorable noise characteristics. Like all semiconductor devices, HBTs can be fabricated in diferent semiconductor materials. The most common are SiGe HBTs, which even today reach values above (ft; fmax) = (300; 500) GHz and are projected to eventually reach the THz range. However, HBTs fabricated in III-V materials offer a versatile alternative. Depending on the materials that are used, III-V HBTs can be the fastest available bipolar transistors (competing only with HEMTs, also fabricated in III-V materials, for the title of fastest available transistors overall), offer very high breakdown voltages and therefore excellent power-handling capability, show good linearity or low noise figures at high frequencies. Typical applications for III-V HBTs include handset PAs, high-effciency and high-speed amplifiers as well as high-speed oscillators . Overall, III-V-based HBTs and especially InP HBTs are excellent candidates for future high-speed communication circuits. The goal of this work is to include important effects occurring in III-V materials in a compact model for circuit design in a physical, yet intuitive way in order to aid deployment of III-V HBTs in prototypes and products. Additionally, the parameter extraction procedure for the compact model is described and analyzed in detail so an accurate, physics-based parameter set can be obtained. Finally, the agreement of the model with measurements is demonstrated for three different III-V HBT processes.